CDBF0230L
Page 1
QW-A1026
REV:B
0.102(2.60)
0.095(2.40)
0.020(0.50) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.040(1.00) Typ.
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
uA
V
30
0.5
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 1005 standard package
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BA
-Mounting position: Any
-Weight: 0.006 gram(approx.).
/SOD-323F
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Io = 200 mA
VR = 30 Volts
RoHS Device
1005/SOD-323F
RATING AND CHARACTERISTIC CURVES (CDBF0230L)
REV:B
Page 2
QW-A1026
0 1510 20
1
10
100
525 30
Capacitance between terminals (PF)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
f = 1 MHz
Ta = 25 C
1u
10n
10u
100n
0 10 20 25 30
1m
100u
15
5
Reverse voltage (V)
Fig. 2 - Reverse characteristics
Reverse current ( A )
O
25 C
O
75 C
O
-25 C
Forward voltage (mV)
430
400
440
420
450
410
AVG:4 21.28mV
O
Ta=25 C
IF=200mA
n=30pcs
Fig. 5 - VF Dispersion map
Reverse current (uA)
30
0
40
20
50
10
AVG:4 .1 816uA
5
15
25
35
45
Fig. 6 - IR Dispersion map
Capacitance between
terminals(pF)
26
20
28
24
30
22
AVG:2 2.8 pF
21
23
25
27
29
Fig. 7 - CT Dispersion map
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
O
Ta=25 C
VR=10V
n=30pcs
0
20
40
60
80
100
0 25 50 75 100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
0.2 0.40
1
100
0.5
0
0.8
1000
0.6
0.3
0.1 0.7
10
Forward current (mA )
Forward voltage (V)
Fig. 1 - Forward characteristics
O
-25 C
O
25C
O
75C
O
125C
150
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Page 3
QW-A1026
REV:B
BCdD D2
D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.061 0.004±0.104 0.004±0.041 0.004±0.061 0.002±7.008 0.04±2.362 MIN. 0.512 0.008±
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.
1.55 0.10± 2.65 0.10±
4.00 0.10±
1.55 0.05±
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±1.05 0.10±
4.00 0.10± 2.00 0.05± 0.23 0.05± 8.00 0.20± 13.5 MAX.
178 1±
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B W
P
P0
P1
A
Polarity
1005
(SOD-323F)
1005
(SOD-323F)
Page 4
QW-A1026
REV:B
BA
Part Number
CDBF0230L
Marking Code
BA
Marking Code
Suggested PAD Layout
SIZE
(inch)
0.083
(mm)
2.10
1.20
1.20
0.047
0.047
3.30 0.130
E0.90 0.035
Standard Package
A
B
C
D
A
C
B
E
D
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
1005/SOD-323F
Case Type
Qty per Reel
(Pcs)
4000
1005/SOD-323F
Reel Size
(inch)
7
