MBR860MFS, NRVB860MFS SWITCHMODE Power Rectifiers These state-of-the-art devices have the following features: Features * Low Power Loss / High Efficiency * New Package Provides Capability of Inspection and Probe After * * * * * * Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 60 VOLTS 5,6 1,2,3 Mechanical Characteristics: * * * * * Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94-0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V 60 Average Rectified Forward Current (Rated VR, TC = 165C) IF(AV) 8.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 165C) IFRM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg -65 to +175 Operating Junction Temperature TJ -55 to +175 C Unclamped Inductive Switching Energy (10 mH Inductor, Non-repetitive) EAS 40 mJ MARKING DIAGRAM A 1 A SO-8 FLAT LEAD CASE 488AA STYLE 2 B860 A Y W ZZ A C B860 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION 150 ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Device Package Shipping MBR860MFST1G SO-8 FL (Pb-Free) 1500 / Tape & Reel MBR860MFST3G SO-8 FL (Pb-Free) 5000 / Tape & Reel NRVB860MFST1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NRVB860MFST3G SO-8 FL (Pb-Free) 5000 / Tape & Reel A C For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RJA. (c) Semiconductor Components Industries, LLC, 2013 October, 2013 - Rev. 0 1 Publication Order Number: MBR860MFS/D MBR860MFS, NRVB860MFS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RJC - 2.0 C/W 0.60 0.65 0.72 0.80 25 0.015 75 0.150 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 8 Amps, TJ = 125C) (iF = 8 Amps, TJ = 25C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR V mA 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 100 TA = 175C 1 150C 125C 0.1 0 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 10 0.1 0.2 25C -40C 0.3 0.4 10 TA = 175C 150C 1 125C 0.1 0.5 0.6 0.7 0.8 0 0.1 0.2 25C -40C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1.E+00 TA = 175C TA = 150C 1.E-01 1.E-02 1.E-02 TA = 125C 1.E-03 TA = 175C TA = 150C 1.E-01 TA = 125C 1.E-03 1.E-04 1.E-04 TA = 25C 1.E-05 TA = 25C 1.E-05 1.E-06 1.E-06 1.E-07 1.E-07 1.E-08 1.E-08 TA = -40C 1.E-09 1.E-10 TA = -40C 1.E-09 1.E-10 0 10 20 30 40 50 60 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics http://onsemi.com 2 60 MBR860MFS, NRVB860MFS TYPICAL CHARACTERISTICS 16 TJ = 25C IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 1,000 100 14 dc 12 10 Square Wave 8 6 4 RqJC = 2.0C/W 2 0 10 0 10 20 30 40 50 60 60 80 100 120 140 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO-220AB 180 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 IPK/IAV = 20 TJ = 175C 7 IPK/IAV = 10 6 IPK/IAV = 5 5 4 3 2 Square Wave 1 dc 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 R(t) (C/W) 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 Assumes 25C ambient and soldered to a 600 mm2 - oz copper pad on PCB Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 8. Thermal Response http://onsemi.com 3 1 10 100 1,000 MBR860MFS, NRVB860MFS PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE H 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 8X DETAIL A 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X 1.000 e/2 L 1 4 0.965 K 1.330 E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.905 2X 0.495 4.530 3.200 G STYLE 2: PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE SOLDERING FOOTPRINT* b MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _ 0.475 D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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