THIS PAGE INTENTIONALLY LEFT BLANK
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC715LP3 / 715LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
v01.0808
General Description
Features
Functional Diagram
The HMC715LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 2.1 and 2.9 GHz. The amplier
has been optimized to provide 0.9 dB noise gure,
19 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC715LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Noise Figure: 0.9 dB
Gain: 19 dB
Output IP3: +33 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
Typical Applications
The HMC715LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Electrical Specications
TA = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1]
Parameter Vdd = +3V Vdd = +5V Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 2.1 - 2.9 2.3 - 2.7 2.1 - 2.9 2.3 - 2.7 MHz
Gain 14.5 18 15 18 15.5 19 16.5 19 dB
Gain Variation Over Temperature 0.01 0.01 0.01 0.01 dB/ °C
Noise Figure 0.9 1.2 0.9 1.2 0.9 1.2 0.9 1.2 dB
Input Return Loss 11.5 11 11.5 11 dB
Output Return Loss 14 13.5 12.5 12 dB
Output Power for 1 dB
Compression (P1dB) 10.5 14.5 12.5 15 15 19 16.5 19.5 dBm
Saturated Output Power (Psat) 16 16.5 20 20.5 dBm
Output Third Order Intercept (IP3) 28 28.5 33 33.5 dBm
Supply Current (Idd) 47 65 47 65 95 126 95 126 mA
[1] Rbias resistor sets current, see application circuit herein
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss [1] [2]
-30
-24
-18
-12
-6
0
6
12
18
24
30
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
5V
3V
FREQUENCY (GHz)
RESPONSE (dB)
S11
S21
S22
-20
-15
-10
-5
0
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
-20
-15
-10
-5
0
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
[1] Vdd = 5V, Rbias = 2k [2] Vdd = 3V, Rbias = 47k
Gain vs. Temperature [2]
12
14
16
18
20
22
24
26
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
Gain vs. Temperature [1]
12
14
16
18
20
22
24
26
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
Reverse Isolation vs. Temperature [1]
-50
-45
-40
-35
-30
-25
-20
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
ISOLATION (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
P1dB vs. Temperature [1] [2]
Psat vs. Temperature [1] [2]
10
12
14
16
18
20
22
24
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
Psat (dBm)
Vdd=5V
Vdd=3V
9
11
13
15
17
19
21
23
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB (dBm)
Vdd=5V
Vdd=3V
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Output IP3 and Supply Current vs.
Supply Voltage @ 2300 MHz [3]
[1] Vdd = 5V, Rbias = 2k [2] Vdd = 3V, Rbias = 47k
[3] Rbias = 2k for Vdd = 5V, Rbias = 47k for Vdd = 3V [4] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature [1] [2]
20
23
26
29
32
35
38
41
44
2 2.2 2.4 2.6 2.8 3
+25C
+85C
-40C
FREQUENCY (GHz)
IP3 (dBm)
Vdd=5V
Vdd=3V
20
22
24
26
28
30
32
34
36
5
20
35
50
65
80
95
110
125
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
Voltage Supply (V)
Idd
IP3
Noise Figure vs. Temperature [1] [2] [4]
0
0.3
0.6
0.9
1.2
1.5
1.8
2 2.2 2.4 2.6 2.8 3
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE FIGURE (dB)
+85C
+25C
-40C
Output IP3 and Supply Current vs.
Supply Voltage @ 2700 MHz [3]
22
24
26
28
30
32
34
36
38
5
20
35
50
65
80
95
110
125
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
Voltage Supply (V)
Idd
IP3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Power Compression @ 2700 MHz [1]
-10
-5
0
5
10
15
20
25
30
35
-20 -17 -14 -11 -8 -5 -2 1 4 7
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
-10
-5
0
5
10
15
20
25
30
-20 -15 -10 -5 0 5
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
Power Compression @ 2700 MHz [2]
Power Compression @ 2300 MHz [1]
-10
-5
0
5
10
15
20
25
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
-10
-5
0
5
10
15
20
25
-20 -17 -14 -11 -8 -5 -2 1
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
Power Compression @ 2300 MHz [2]
[1] Vdd = 5V, Rbias = 2k [2] Vdd = 3V, Rbias = 47k [3] Rbias = 2k for Vdd = 5V, Rbias = 47k for Vdd = 3V
Gain, Power & Noise Figure
vs. Supply Voltage @ 2300 MHz [3]
Gain, Power & Noise Figure
vs. Supply Voltage @ 2700 MHz [3]
12
14
16
18
20
22
0.8
0.9
1
1.1
1.2
1.3
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain
NF
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
Voltage Supply (V)
8
10
12
14
16
18
20
22
24
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain
NF
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
Voltage Supply (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Output IP3 vs. Rbias @ 2700 MHz
23
26
29
32
35
38
100 1000 10000 100000
Vdd=3V
Vdd=5V
Rbias (Ohms)
IP3 (dBm)
8
10
12
14
16
18
20
0.8
0.9
1
1.1
1.2
1.3
1.4
100 1000 10000 100000
Vdd=3V
Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias (Ohms)
Gain, Noise Figure & Rbias @ 2700 MHz
Output IP3 vs. Rbias @ 2300 MHz
20
23
26
29
32
35
100 1000 10000 100000
Vdd=3V
Vdd=5V
Rbias (Ohms)
IP3 (dBm)
10
12
14
16
18
20
22
0.8
0.85
0.9
0.95
1
1.05
1.1
100 1000 10000 100000
Vdd=3V
Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias (Ohms)
Gain, Noise Figure & Rbias @ 2300 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5V
RF Input Power (RFIN)
(Vdd = +5 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 11.1 mW/°C above 85 °C) 0.72 W
Thermal Resistance
(channel to ground paddle) 90 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
2.7 35
3.0 47
3.3 57
4.5 80
5.0 95
5.5 110
Note: Amplier will operate over full voltage ranges shown above.
Typical Supply Current vs. Supply Voltage
(Rbias = 2k for Vdd = 5V, Rbias = 47k for Vdd = 3V)
Vdd (V) Rbias (Ohms) Idd (mA)
Min Max Recommended
3V 1.8k [1] Open Circuit
2K 28
5.6K 40
47K 47
5V 0 Open Circuit
270 61
820 81
2K 95
[1] With Vdd= 3V and Rbias < 1.8k Ohms may result in the part becoming conditionally stable which is not
recommended.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC715LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 715
XXXX
HMC715LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 715
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
Pin Number Function Description Interface Schematic
1, 3 - 7, 9, 10,
12 - 14, 16 N/C No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2 RFIN This pin is DC coupled. See application
circuit for off chip component.
11 RFOUT This pin is DC coupled. See application
circuit for off chip component.
8 RES This pin is used to set the DC current of the amplier by
selection of external bias resistor. See application circuit.
15 Vdd Power supply voltage. Bypass capacitors are required.
See application circuit.
GND Ground paddle must be connected to RF/DC ground.
Pin Descriptions
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 9
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 10
Evaluation PCB
Item Description
J1, J2 PCB Mount SMA RF Connector
J3, J4 DC Pin
C1 100pF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0603 Pkg.
C3 0.47µF Capacitor, 0603 Pkg.
C4 68pF Capacitor, 0402 Pkg.
C5 3.3pF Capacitor, 0402 Pkg.
R1 2k Resistor, 0402 Pkg.
U1 HMC715LP3(E) Amplier
PCB [2] 122490 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350. or Arlon 25R
List of Materials for Evaluation PCB 122492 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
