Data Sheet September 1998 127A/B/C InGaAs Avalanche Photodetectors Features High performance at both 1.3 m and 1.5 m. Suitable for use in harsh environments. Higher sensitivity and longer wavelength response than germanium APDs. Permanently locked fiber alignment and high coupling stability. Reliable planar structure with InGaAsP layer and dual guard ring for high-speed performance. Wide bandwidth: -- >1.0 GHz (127A) -- >1.8 GHz (127B) -- >2.5 GHz (127C) Compatible with industry-standard packaging. Applications for high data rates: up to 1.5 Gbits/s (127A) or 2.5 Gbits/s (127B/C). Low capacitance. Standard pigtail is a multimode fiber with an FC/PC connector; other pigtails or connectors available on request. The 127A/B/C APDs are compatible with industry-standard packages. Applications Telecommunications -- High-speed, long-haul communication systems -- High-speed metropolitan area networks -- Submarine cable communication systems Military -- Very low-noise receivers -- Satellite transmission -- Optical radar -- Free-space optical communication systems Data Sheet September 1998 127A/B/C InGaAs Avalanche Photodetectors Description munication systems and extremely sensitive optical measurement systems. The Lucent Technologies Microelectonics Group 127A/B/C InGaAs Avalanche Photodetectors (APDs) are high-performance optical devices that are sensitive at both 1.3 m and 1.5 m wavelengths. The APDs feature high sensitivity and wide bandwidths and are capable of data rates up to 2.5 Gbits/s. The 127A/B/C APDs incorporate a hermetically sealed, ceramic package that is bonded within a metal flange. A multimode, fiber-optic pigtail, which is terminated with an FC/PC connector, is aligned with the photodetector chip by means of the metal flange. Other pigtails or connectors are available upon request. The 127A and 127B differ only in the bandwidth. The 127C has modified crystalline layers to provide an increased bandwidth. The APD chip is fabricated by vapor-phase epitaxy and has a planar structure for high reliability. Common applications include long-distance lightwave telecom- Absolute Maximum Ratings Stresses in excess of the Absolute Maximum Ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to Absolute Maximum Ratings for extended periods can adversely affect device reliability. Parameter Symbol Min Max Unit Operating Case Temperature Tc -40 80 C Storage Case Temperature* Tstg -55 80 C Reverse Current Ir -- 1 mA Lead Soldering Temperature/Time -- -- 275/10 C/s * Upper storage temperature is limited by multimode fiber. Electrical Characteristics Table 1. General Electrical Characteristics All measurements at 25 C, 1.3 m light. Parameter Breakdown Voltage: 127A 127B 127C Vbr Temperature Coefficient: 127A 127B 127C Maximum Gain: 127A 127B 127C Primary Dark Current: 127A 127B 127C 2 Symbol Conditions Min Typ Max Unit Vbr Vbr Vbr Id = 10 A Id = 10 A Id = 10 A 55 55 45 65 65 60 95 95 90 V V V -- -- -- 0.15 0.15 0.12 0.20 0.20 0.15 0.30 0.30 0.20 %/C %/C %/C Mmax Mmax Mmax -- -- -- 30 30 30 -- -- -- -- -- -- -- -- -- Idp Idp Idp -- -- -- -- -- -- 5 5 10 10 10 15 nA nA nA Lucent Technologies Inc. Data Sheet September 1998 127A/B/C InGaAs Avalanche Photodetectors Electrical Characteristics (continued) Table 1. General Electrical Characteristics (continued) All measurements at 25 C, 1.3 m light. Parameter Symbol Conditions Min Typ Max Unit Idm Idm Idm M = 12 M = 12 M = 12 -- -- -- 50 50 100 100 100 150 nA nA nA Bandwidth: 127A 127B 127C fc fc fc 4 < M < 12 4 < M < 12 4 < M < 12 1.3 1.8 2.5 1.5 2.0 3.0 -- -- -- GHz GHz GHz Excess Noise Factor: 127A 127B 127C F F F M = 12 M = 12 M = 12 -- -- -- 5 5 5 6 6 6 -- -- -- Capacitance: 127A 127B 127C C C C M = 12 M = 12 M = 12 -- -- -- 0.5 0.5 0.6 0.6 0.6 0.7 pF pF pF Gain Coefficient:* 127A 127B 127C A A A M>3 M>3 M>3 50 50 30 60 60 40 70 70 60 V V V R R R M = 12 M = 12 M = 12 9.1 9.1 9.1 9.6 9.6 9.6 -- -- -- A/W A/W A/W Total Dark Current: 127A 127B 127C Responsivity: 127A 127B 127C * The A coefficient and the breakdown voltage are given for each APD. The gain at any voltage (for M > 3) can be calculated from these para meters per: M = A/(Vbr - V). Responsivity = quantum efficiency x coupling efficiency x gain x (/1.24). Lucent Technologies Inc. 3 127A/B/C InGaAs Avalanche Photodetectors Data Sheet September 1998 Characteristic Curves (TA = 25 C) 1-586 (C) 1-589 (C) Figure 1. Frequency Response (127A/B) Figure 3. Frequency Response (127C) Note: Responsivity = chip quantum efficiency x pigtail coupling efficiency x gain x (m)/1.24. The minimum chip quantum efficiency is 80%, and the minimum pigtail coupling efficiency is 90%. 1-588 (C) 1-587 (C) Figure 4. 1/Gain vs. Reverse Bias Figure 2. Responsivity vs. Wavelength for M = 12 and = 1.3 m 4 Lucent Technologies Inc. Data Sheet September 1998 Characteristic Curves (TA = 25 C) 127A/B/C InGaAs Avalanche Photodetectors (continued) 1-606 (C) Figure 5. Dark Current vs. Reverse Bias (127A/B) 1-321 (C) Figure 7. Excess Noise Factor vs. Gain Figure 7. Excess Noise Factor vs. Gain 1-607 (C) Figure 6. Dark Current vs. Reverse Bias (127C) Note: The temperature dependence of the 127C dark current is1-608 the(C) same as the 127A/B. Figure 8. Dark Current vs. Voltage as a Function of Temperature at 25 C Increments Lucent Technologies Inc. 5 127A/B/C InGaAs Avalanche Photodetectors Data Sheet September 1998 Characteristic Curves (TA = 25 C) (continued) APD Receiver Sensitivity The following figure illustrates typical receiver sensitivity at a receiver rate of 1.7 Gbits/s and = 1.3 m for an InGaAs PIN, Ge APD, and InGaAs APD. 1-491 (C) Figure 9. APD Receiver Sensitivity 6 Lucent Technologies Inc. Data Sheet September 1998 127A/B/C InGaAs Avalanche Photodetectors Qualification Information The 127-Type APD Module has been subjected to the following qualification tests with the intent of meeting Bellcore TR-NWT-000468 requirements. Not all of the 468 tests have had to be performed specifically on the 127 due to its use of pieceparts from similar, already qualified designs. For example, the hermetic ceramic package in the 127 has already been qualified from previous APD products using the same part; therefore, a high-temperature operating bias test is not required. If some test parameters do not fully meet the 468 requirements, it is due to the limitations of the test equipment involved. For all of the indicated tests, the failure criteria includes a change in breakdown voltage greater than 1 V; an increase in the multiplied dark current greater than twice the original value, or a total of 600 nA.; a change in responsivity greater than 10%; or an increase in the primary dark current greater than twice the original, or a total of 5 nA. Table 2. 127 APD Qualification Test Program Test Conditions Sample Size/ No. of Failures 100 cycles, -40 C to +70 C, air to air 10/0 Max acceleration = 100 g, frequency range: 20 Hz min to 1500 Hz max, minimum cycle time = 4 min., 3 axes 10/0 Acceleration = 1500 g, number of blows each direction = 5, shock pulse duration = 0.5 ms, number of axes = 6, x, y, z 10/0 Same as vibration and shock but administered sequentially on the same devices 10/0 High-Temperature Storage 1 T = 70 C for 168 hours 10/0 High-Temperature Storage 2 T = 80 C for 1000 hours, devices used are from hightemperature storage cell 1 10/0 T = 85 C, 85% RH, 4 devices for 864 hours 12 devices for 624 hours 16/0 10 cycles, 1 day/cycle, each cycle 25 C to 65 C, 90% to 100% RH 10/0 >3 N, 3 times parallel to feedthrough; same devices ~10 N, 3 times parallel to feedthrough 9/0 T = 350 C, 3.5 s, 2.5 mm from package body 4/0 Test Name Temperature Cycle Vibration Mechanical Shock Mechanical Sequence Damp Heat Cyclic Moisture Resistance Fiber Pull Resistance Soldering to Heat Lucent Technologies Inc. 7 Data Sheet September 1998 127A/B/C InGaAs Avalanche Photodetectors Ordering Information Description InGaAs Avalanche Photodetector Part Number Comcode 127A 127B 127C 105742969 105742977 106186299 For additional information, contact your Microelectronics Group Account Manager or the following: http://www.lucent.com/micro, or for Optoelectronics information, http://www.lucent.com/micro/opto INTERNET: docmaster@micro.lucent.com E-MAIL: N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA PACIFIC: Microelectronics Group, Lucent Technologies Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256 Tel. (65) 778 8833, FAX (65) 777 7495 CHINA: Microelectronics Group, Lucent Technologies (China) Co., Ltd., A-F2, 23/F, Zao Fong Universe Building, 1800 Zhong Shan Xi Road, Shanghai 200233 P. R. China Tel. (86) 21 6440 0468, ext. 316, FAX (86) 21 6440 0652 JAPAN: Microelectronics Group, Lucent Technologies Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan Tel. (81) 3 5421 1600, FAX (81) 3 5421 1700 EUROPE: Data Requests: MICROELECTRONICS GROUP DATALINE: Tel. (44) 1189 324 299, FAX (44) 1189 328 148 Technical Inquiries: OPTOELECTRONICS MARKETING: (44) 1344 865 900 (Bracknell UK) Lucent Technologies Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information. Copyright (c) 1998 Lucent Technologies Inc. All Rights Reserved Printed in U.S.A. September 1998 DS98-426LWP (Replaces DS95-103LWP)