PD - 94632A IRF3710Z IRF3710ZS IRF3710ZL AUTOMOTIVE MOSFET Features O O O O O O HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS(on) = 18m G Description ID = 59A Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D2Pak IRF3710ZS TO-220AB IRF3710Z TO-262 IRF3710ZL Absolute Maximum Ratings ID @ TC = 25C Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) 59 A ID @ TC = 100C Continuous Drain Current, VGS @ 10V (See Fig. 9) 42 IDM Pulsed Drain Current 240 PD @TC = 25C Maximum Power Dissipation 160 W VGS Linear Derating Factor Gate-to-Source Voltage 1.1 20 W/C V 170 mJ EAS c EAS (tested) Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range i c d 200 See Fig.12a,12b,15,16 h A mJ -55 to + 175 C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS Junction-to-Case Case-to-Sink, Flat, Greased Surface RJA Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount, steady state) j Typ. Max. Units --- 0.92 C/W 0.50 --- --- 62 --- 40 HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 08/29/03 IRF3710Z/S/L Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ RDS(on) VGS(th) Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 100 --- --- 2.0 35 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.10 14 --- --- --- --- --- --- 82 19 27 17 77 41 56 4.5 --- --- 18 4.0 --- 20 250 200 -200 120 28 40 --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 2900 290 150 1130 170 280 --- --- --- --- --- --- gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 35A V VDS = VGS, ID = 250A S VDS = 50V, ID = 35A A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V nC ID = 35A VDS = 80V VGS = 10V ns VDD = 50V ID = 35A RG = 6.8 VGS = 10V D nH Between lead, f f f 6mm (0.25in.) from package pF G S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.27mH, RG = 25, IAS = 35A, VGS =10V. Part not recommended for use above this value. ISD 35A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. 2 Min. Typ. Max. Units --- --- 59 A --- --- 240 --- --- --- --- 50 100 1.3 75 160 Conditions MOSFET symbol V ns nC D showing the integral reverse G p-n junction diode. TJ = 25C, IS = 35A, VGS = 0V TJ = 25C, IF = 35A, VDD = 25V di/dt = 100A/s f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF3710Z/S/L 1000 1000 100 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1 4.5V 0.1 100 BOTTOM 4.5V 10 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 1 0.01 0.1 1 10 0.1 100 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 GFS , Forward Transconductance (S) ID, Drain-to-Source Current () 1 T J = 175C 100 10 T J = 25C 1 VDS = 25V 20s PULSE WIDTH 0 100 TJ = 25C 80 T J = 175C 60 40 20 VDS = 15V 20s PULSE WIDTH 0 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 0 10 20 30 40 50 60 70 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current 3 IRF3710Z/S/L 100000 f = 1 MHZ =C + C , C gs gd ds = Cgd iss C rss C 10000 oss ID= 35A SHORTED V GS, Gate-to-Source Voltage (V) C C, Capacitance(pF) 12.0 VGS = 0V, =C +C ds gd Ciss 1000 Coss Crss 100 10 1 10 100 V DS= 80V 10.0 V DS= 50V V DS= 20V 8.0 6.0 4.0 2.0 0.0 0 V DS, Drain-to-Source Voltage (V) 20 40 60 80 100 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000.00 1000 100.00 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 175C 10.00 TJ = 25C 1.00 V GS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.6 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec 0.1 1 10 100 1000 V DS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3710Z/S/L 60 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 ID, Drain Current (A) 50 40 30 20 10 0 2.5 ID = 59A V GS = 10V 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 -60 -40 -20 0 TC , Case Temperature (C) 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3710Z/S/L 300 DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 15V ID 15A 25A BOTTOM 35A TOP 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS V GS(th) Gate threshold Voltage (V) 5.0 4.0 3.0 ID = 250A 2.0 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 TJ , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage vs. Temperature www.irf.com IRF3710Z/S/L 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 35A 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF3710Z/S/L D.U.T Driver Gate Drive + + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF3710Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE www.irf.com PART NUMBER IRF1010 9246 9B 1M DATE CODE (YYWW) YY = YEAR WW = WEEK 9 IRF3710Z/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE 10 PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com IRF3710Z/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 11 IRF3710Z/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/03 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/