DSA 70 C 150 HB
Schottky Diode Gen ²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
420
IA
V
F
0.90
R0.70 K/W
V
R
=
1 2 3
min.
35
t = 10 ms
Applications:
V
RRM
V
150
0.68
T
VJ
V°C=
T
VJ
°C=mA
7.5
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=150°C
d =
P
tot
215 WT
C
°C=
T
VJ
175 °C
-55
V
I
RRM
=
=150
35
35
T
VJ
=45°C
DSA 70 C 150 HB
V
A
150
V150
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.06
T
VJ
°C=25
C
J
j
unction capacitance V= V;24 T
125
V
F0
V
0.53
T
VJ
=175°C
r
F
4.9 Ω
f = 1 MHz = °C25
m
V
0.77
T
VJ
=°C
I
F
=A
V
35
0.94
I
F
=A70
I
F
=A70
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
=0.77
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
mA
226 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20100531a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
DSA 70 C 150 HB
I
RMS
A
per terminal 50
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N120
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSA 70 C 150 HB 506708Tube 30
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
D
S
A
70
C
150
HB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-247AD (3)
=
=
=
1
)
Ma r king on Pr o d uc t
DSA70C150HB
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
In case of (1) and a common cathode/anode configu ration with a non-isolated backside,
the current capability can be increased by connecting the backside.
IXYS reserves the right to change limits, conditions and dimensions. 20100531a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
DSA 70 C 150 HB
S
Ø
P
Ø
P1 D2
D1
E1
4
123
L
L1
2x
b2
3x
b
b4
2x
e
2x
E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20100531a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
DSA 70 C 150 HB
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
10
20
30
40
50
60
70
0 40 80 120 160
0.0001
0.001
0.01
0.1
1
10
100
10 30 5002040
0
10
20
30
40
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 50 100 150 200
0
10
20
30
40
50
60
0 40 80 120 160
0
100
200
300
400
500
600
700
800
900
1000
DC
25°C
50°C
75°C
100°C
125°C
Single Pulse
T
VJ
=175°C
150°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
t[ms]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case
I
F(AV)
[A]
T
VJ
=
150°C
125°C
25°C T
VJ
=25°C
d= 0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
Z
thJC
[K/W]
IXYS reserves the right to change limits, conditions and dimensions. 20100531a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
