LITE-ON SEMICONDUCTOR MBRF1030CT thru 1045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES M B DIM. K D A C A B C PIN 1 2 3 J F G I MECHANICAL DATA H N H L Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.7 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) D E F E Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications PIN 1 PIN 2 PIN 3 G H I J K ITO-220AB MIN. 15.50 10.0 3.00 9.00 2.90 13.46 1.15 2.40 0.75 MAX. 16.50 10.40 3.50 9.30 3.60 14.22 1.70 2.70 1.00 0.45 0.70 3.00 3.30 L 4.36 4.77 M 2.48 2.80 2.80 2.50 N All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL MBRF1030CT MBRF1040CT MBRF1045CT UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward RectifiedCurrent at TC=120 C (See Fig.1) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load VRRM VRMS VDC 30 21 30 40 28 40 45 31.5 45 V V V Voltage Rate of Change (Rated VR) CHARACTERISTICS Maximum Forward Voltage, (Note 1) @IF=5A TJ =125 C @IF=5A TJ =25 C @IF=10A TJ =125 C Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =125 C Typical Junction Capacitance, per element (Note 2) Typical Thermal Resistance (Note 3, 4) Operating Temperature Range Storage Temperature Range Dielectric Strengh from terminals to case, AC with t=1 minute, RH<30% I(AV) 10 A IFSM 125 A dv/dt 10000 V/us VF 0.57 0.70 0.84 V IR 0.1 15 mA CJ 280 pF R0JC TSTG 4.0 -55 to +150 -55 to +175 C/W C C Vdis 2000 V TJ NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 4. Device mounted on 50mm x 50 mm x 2 mm Cu Plate. REV. 1, Aug-2007, KTHC50 RATING AND CHARACTERISTIC CURVES MBRF1030CT thru MBRF1045CT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 12 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 16 100 75 8 50 4 RESISTIVE OR INDUCTIVE LOAD 25 8.3ms Single Half-Sine-Wave 0 0 25 50 75 100 125 150 175 1 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 10 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 10000 TJ = 125 C 1000 100 10 TJ = 25 C 1 10 1 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0.1 0 20 40 60 80 100 120 0 0.2 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.6 0.8 1 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.2