DS-RM24C256C-L–081F–11/2016
Features
Memory array: 256Kbit non-volatile serial EEPROM memory
Single supply voltage: 1.65V - 3.6V
2-wire I2C interface
Compatible with I2C bus modes:
-100kHz
-400kHz
-1MHz
Page size: 64 bytes
-Byte and Page Write from 1 to 64 bytes
Low Energy Byte Write
-Byte Write consuming 50 nJ
Low power consumption
-0.25 mA active Read current
-1.0 mA active Write current
-1.0 µA Standby current
Fast Write
-Page Write in 3 ms (64 byte page)
-Byte Write within 60 µs
Random and sequential Read modes
Industry’s lowest read cycle latency
Unlimited read cycles
Write protect of the whole memory array
8-lead SOIC, 8-lead TSSOP, 8-pad UDFN, and 6-ball WLCSP packages
RoHS-compliant and halogen-free packaging
Data Retention: >40 years at 125°C
Endurance: 100,000 Write Cycles (for both byte and page write cycles)
- No degradation across temperature range
Industrial Operating Temperature: -40C to 85C
No data loss under UV exposure on bare die or WLCSP
Based on Adesto's proprietary CBRAM® technology
Description
The Adesto® RM24C256C-L is a 256Kbit, serial EEPROM device that utilizes
Adesto's CBRAM® resistive memory technology. The memory devices use a single
low-voltage supply ranging from 1.65V to 3.6V.
The Adesto® I2C device is accessed through a 2-wire I2C compatible interface
consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL)
frequency is 1MHz. The devices have both byte write and page write capability. Page
RM24C256C-L
256-Kbit 1.65V Minimum
Non-volatile Serial EEPROM
I2C Bus
Preliminary Datasheet
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write is 64 bytes. The Byte Write operation of CBRAM-based products consumes only 10% of the energy consumed by a
Byte Write operation of EEPROM devices of similar size.
Adesto's EEPROM endurance can be as much as 40X higher than industry standard EEPROM devices operating in byte
write mode at 85°C. Unlike EEPROMs based on floating gate technology (which require read-modify-write on a whole
page for every write operation) CBRAM write endurance is based on the capability to write each byte individually,
irrespective of whether the user writes single bytes or an entire page. Additionally, unlike floating gate technology,
CBRAM does not experience any degradation of endurance across the full temperature range. By contrast, in order to
modify a single byte, most EEPROMs modify and write full pages of 32, 64 or 128 bytes. This provides significantly less
endurance for floating gate devices used in byte write mode when compared to page write mode.
The Page Write operation of CBRAM-based products is 4-6 times faster than the Page Write operation of similar
EEPROM devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire
memory in one operation.
External address pins permit up to eight devices on the same data bus. The devices are available in standard 8-pin SOIC
and TSSOP, UDFN and WLCSP packages.
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1. Block Diagram
Figure 1-1. Block Diagram
Memory
Control
Logic
I/O
Control
Logic
I/O Buffers and Data
Latches
Page Buffer
Y-Decoder
X-Decoder
512 Kb32 Kb to
Resistive Memory
Address
Latch
&
Counter
VCC
SCL
SDA
E0
E1
E2
WP
GND
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2. Pin/Signal Descriptions
Table 2-1. Pin/Signal Descriptions
Symbol Pin # Name/Function Description
E0 1LSB - Least Significant Bit,
External Enable
LSB of the three external enable bits (E0, E1 and E2). The levels of
the external enable bits are compared with three enable bits in the
received control byte to provide device selection. The device is
selected if the comparison is true. Up to eight devices may be
connected to the same bus by using different E0, E1, E2
combinations.
E1 2External Enable
The middle of the three external enable bits (E0, E1 and E2). The
levels of the enable bits are compared with three enable bits in the
received control byte to provide device selection. Also see the E0,
E2 pin.
E2 3MSB - Most Significant Bit,
External Enable
MSB of the three external enable bits (E0, E1 and E2). The levels
of the enable bits are compared with three enable bits in the
received control byte to provide device selection. Also see the E0,
E1 pin.
GND 4Ground
SDA 5Serial Data
Bidirectional pin used to transfer addresses and data into and data
out of the device. It is an open-drain terminal, and therefore
requires a pull-up resistor to VCC. Typical pull-up resistors are:
10KΩ for 100KHz, and 2KΩ for 400KHz and 1MHz.
For normal data transfer, SDA is allowed to change only during SCL
low. Changes during SCL high are reserved for indicating the
START and STOP conditions.
SCL 6Serial Clock This input is used to synchronize the data transfer from and to the
device. SCL is an input only, since it is a slave-only device.
WP 7Write Protect
Connect to either VCC or GND. If pulled low, write operations are
enabled. If pulled high, write operations are inhibited, but read
operations are not affected.
Vcc 8Power Power supply pin
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2.1 Pin Out Diagram
Figure 1. Figure 2. (Bottom-view)
Pin 1
Figure 1. Pin out diagram for SOIC, TSSOP and UDFN packages. Figure 2. Pin out diagram for WLCSP package.
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3. I2C Bus Protocol
I2C is a 2-wire serial bus architecture with a clock pin (SCL) for synchronization, and a data pin (SDA) for data transfer.
On the device the SDA pin is bi-directional. The SCL pin is an input only, because the device is slave-only. The SCL and
SDA pins are both externally connected to a positive supply voltage via a current source or pull-up resistor. When the bus
is free, both lines are high. The output stages of devices connected to the bus must have an open drain or open collector
to perform a wired-AND function. Data on the I2C bus can be transferred at rates of up to 1 Mbit/s. The number of
interfaces that may be connected to the bus is solely dependent on the bus capacitance limit of 400pF.
The data on the SDA line must be stable during the high period of the clock. The high or low state of the data line can
only change when the clock signal on the SCL line is low (see Figure 1-1).
Figure 3-1. Bit Transfer on the I2C bus
A high-to-low transition on the SDA line while SCL is high indicates a START condition. A low-to-high transition on the
SDA line while SCL is high defines a STOP condition.
START and STOP conditions are always generated by the master. The bus is considered to be busy after the START
condition. The bus is considered to be free again a certain time after the STOP condition (see Figure 3-2).
Figure 3-2. START and STOP conditions
Every byte put on the SDA line must be 8 bits long. The number of bytes that can be transmitted per transfer is
unrestricted. Each byte must be followed by an acknowledge bit; therefore, the number of clock cycles to transfer one
byte is nine. Data is transferred with the most significant bit (MSB) first.
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3.1 I2C Master and Slave Configuration
The device has a two-pin industry-standard I2C interface. It is configured as a slave-only device and therefore does not
generate a clock. By connecting the E0, E1 and E2 enable pins in the configuration shown in Figure 3-3, up to eight
devices can be connected onto an I2C Interface bus controlled by an I2C master device, such as a microcontroller.
Figure 3-3. Connection between I2C Master and Slaves
4. Device Timing
Figure 4-1. Bus Timing Data
Figure 4-2. Power-up Timing
Power up delay tPUD is based on VCCi which is the voltage level at which the internal reset circuit releases and signals the
controller to initiate the power-on reset condition for a 75µS maximum period.
VCC
min
VCC
max
V
VCCI
Device in Reset
Program, Read, Erase and Write Commands Rejected
t
PUD
Device Fully
Accessible
TIME
VCC
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5. Device Addressing
The first byte sent from the master device to the EEPROM following the START condition is the control byte (See Figure
5-1). The first four bits of the control byte is the control code. The control code is “1010” both for read and for write
operations. The next three bits of the control byte are the enable bits (E2, E1 and E0), which are compared to the levels
set on the E0, E1 and E2 pins. The E0, E1 and E2 bits sent in the control byte must correspond to the logic levels set on
the corresponding E0, E1 and E2 pins for a device to be selected. In effect, the E0, E1 and E2 bits in the control register
act as the three MSB bits of a word address. These three bits allow the use of up to eight devices on the same bus. The
last bit of the control byte (R/W) defines the operation to be performed, read or write: if set to a one, a read operation is
selected; if set to a zero, a write operation is selected.
Figure 5-1. Control Byte
Upon receiving a "1010", the chip enable bits, and the R/W bit, the device performs an acknowledge by pulling the SDA
line low during the 9th clock pulse. As stated above, the device will now be set for either a read or a write operation by the
R/W bit.
After the device acknowledges the control byte, two additional bytes are sent by the master to the slave. These define the
target address of the byte in the device to be written. The bit assignment for the address is shown in Figure 5-2.
It should be noted that not all the address bits are used. For the 256-Kbit device, only address A0 to A14 are used; the
rest are don't cares and must be set to "0".
Figure 5-2. Address sequence bit assignment
The device will acknowledge each byte of data that is received by pulling the SDA line low during the 9th clock pulse. If
the device does not provide an acknowledge, it has not received the data; consequently the entire sequence, starting
with the control byte, must be resent.
6. Byte Write Operation
If the R/W bit in the control byte is set to zero, the device will be in write mode. Once the control byte is received, the
device will perform an acknowledge; it will then be ready to receive the Address High Byte (see Figure 6-1). After
receiving the Address High Byte, the device acknowledges and then is ready to receive the Address Low Byte. After
receiving the Address Low Byte, the device will acknowledge and then write the address (expressed by the high and low
address bytes) into its address pointer. The device is then ready to receive a byte of data to be written into the
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addressed memory location. After the device receives the data, it performs an acknowledge. After the master has
received the last acknowledge (after the data byte) the master should send a STOP condition. The STOP condition
initiates the internal write cycle in the device. If the master does not send a STOP, the device will not write the data into
the addressed memory location.
While the device is in the write cycle it will not generate an acknowledge signal. Meanwhile, the master can poll the
device to determine when the write cycle is complete by sending it a control byte and looking for an acknowledge. Once
the write cycle has completed, the device will acknowledge a control byte sent to it.
If, in the RM24C256C-L, the byte written is the last byte in a 64-byte page, the address will wrap around to the beginning
of the same page. For instance, if the byte is written to address 007Fh, the incremented address will be 0000h. If the byte
is written to address 07FFh, the incremented address will be 0780h.
If a write cycle is attempted with the WP (write protect) pin held high, the device will acknowledge the command, address,
and data, but no write cycle will occur following the STOP command. The data will not be written, and the device will
immediately be available to accept a new command. However, the internal address pointer will be written; so after the
data byte is transmitted to the device and the STOP command issued by the master, the internal address pointer will
again be incremented by one.
Figure 6-1. Byte Write Cycle
7. Page Write Operation
Table 7-1. Density and Page Size
During a Page Write cycle, a page with up to 64 bytes of data can be written in one continuous write command. The Page
Write starts in the same manner as the Byte Write. In a Page Write, after the acknowledge following the first data byte,
the master does not send a STOP, but continues to send additional data bytes. (See Figure 7-1.) At the end of the
number of bytes to be written, the master sends a STOP command. Once the STOP command is sent, the device will
write all the data bytes into memory, starting at the address location given in the address bytes.
If the master should transmit more than 64 bytes prior to generating the STOP command, the internal 64-byte data buffer
in the device will wrap around and the first data bytes transmitted will be overwritten.
The internal address pointer will not increment beyond a page boundary but will instead wrap around to the first byte of
the addressed page.
As with the Byte Write cycle, once the STOP command is received the device enters a write cycle. During the write cycle,
the device will not generate an acknowledge signal. Meanwhile, the master can poll the device to determine when the
write cycle is complete by sending it a control byte and looking for an acknowledge. Once the write cycle has completed,
the device will acknowledge a control byte sent to it.
During the Page Write cycle, the first byte in the data byte buffer will be written in the address location indicated by the
address bytes transmitted to the device. Each successive data byte will be written in the successive address locations.
Product Density Page Size (byte)
RM24C256D 256 Kbit 64
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If a Page Write cycle is attempted with the WP pin held high, the device will acknowledge the command, address and
data bytes, but will not enter a write cycle after the STOP command is issued. No data will be written, and the device will
immediately be available to accept a new command. However, the internal address pointer will be written; so after the
Page Write data bytes are transmitted to the device and the STOP command issued by the master, the internal address
pointer will be incremented by the number of data bytes sent (but only within the page addressed).
Note that the Page Write operation is internally executed by sequentially writing the words in the Page Buffer. Therefore
the Page Write time can be estimated as Byte Write time multiplied by the Number of Words to be written.
Figure 7-1. Page Write Cycle
8. Write Protection
The WP pin allows the user to write-protect the entire memory array when the pin is tied to VCC. If the WP pin is tied to
GND, write protection is disabled. The WP pin is sampled at the STOP command for every Write command. Toggling the
WP pin after the STOP command will have no effect on the execution of the write cycle.
9. Polling
The fact that the device will not acknowledge during a write cycle can be used to determine when the write cycle is
complete. By polling the device during the write cycle, bus throughput can be maximized.
Once the STOP command for the write cycle is sent by the master, the device initiates the internally timed write cycle.
Acknowledge polling, by the master, can be initiated immediately. Acknowledge polling involves the master sending a
START command, followed by the control byte for a write command (R/W=0). If the device is still busy with the write
cycle, no acknowledge is returned. If no acknowledge is returned, the START command and control byte can be re-
transmitted. If the write cycle is complete, the device will return an acknowledge. The master can then proceed with the
next read or write command. See for a flow diagram.
NOTE: Care must be taken when polling the device. The control byte that was used to initiate the write must match the
control byte used for polling.
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Figure 9-1. Acknowledge Polling Flow
10. Read Operation
Read operations are initiated in the same way as the write operations, except that the R/W bit of the control byte is set to
one. There are three types of read operations: Current Address Read, Random Read, and Sequential Read.
10.1 Current Address Read
The device internal address pointer maintains the address of the last word accessed, internally incremented by one.
Therefore, if the previous read access was to address n (any legal address), the next Current Address Read operation
would access data from address n+1. After the last memory address, the address counter “rolls-over”, and the device
continues to output data from memory address 00h.
If a Current Address Read is performed after a Byte Write or Page Write, care must be taken to understand that during
the page/byte write command, the address can wrap around within the same page.
Upon receipt of the control byte with the R/W bit set to one, the device issues an acknowledge and transmits the 8-bit
data word located at the address of the internal address pointer. The master will not acknowledge the transfer, but does
generate a STOP condition and the device discontinues transmission. See Figure 10-1.
Figure 10-1. Current Address Read
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10.2 Random Read
Random read operations allow the master to access any memory location in a random manner. To perform a Random
Read, first the address to be accessed must be set. This is done by sending the address to the device as part of a write
operation (R/W = 0). After the address is sent and acknowledged by the device, the master generates a START. This
terminates the write operation, but the address pointer will be set to the address sent. The master then issues the same
control byte as the write operation, but with the R/W bit set to 1. The device will acknowledge and transmit the 8-bit data
byte located at the address location written. The master will not acknowledge the transfer of the data byte, but will instead
generate a STOP condition, which causes the device to discontinue transmission. See Figure 10-2. After the Random
Read operation, the internal address counter will increment to the address location following the one that was just read.
Figure 10-2. Random Read
10.3 Sequential Read
Sequential read allows the whole memory contents to be serially read during one operation. Sequential Read is initiated
in the same way as a Random Read except that after the device transmits the first data byte, the master issues an
acknowledge instead of a STOP condition. This acknowledge from the master directs the device to transmit the next
sequentially addressed byte (See Figure 10-3). Following the final byte transmitted to the master, the master will not
generate an acknowledge, but will generate a STOP condition which causes the device to discontinue transmission.
To provide the Sequential Read, the device contains an internal address pointer which is incremented by one at each
acknowledge received by the master, and by the STOP condition.
Figure 10-3. Sequential Read
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11. Electrical Specifications
11.1 Absolute Maximum Ratings
Table 11-1. Absolute Maximum Ratings*
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these, or any other conditions beyond those
indicated in the operational sections of this specification, is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
11.2 DC Characteristics
Parameter Specification
Operating ambient temp range -40°C to +85°C
Storage temperature range -65°C to +150°C
Input supply voltage, VCC to GND - 0.3V to 3.6V
Voltage on any pin with respect to GND -0.5V to (VCC + 0.5V)
ESD protection on all pins (Human Body Model) >2kV
Junction temperature 125°C
Symbol Parameter Condition Min Typ Max Units
TA=‐40°Cto+85°C,VCC=1.65Vto3.6V
VCC Supply Range 1.65V to 3.6V 1.65 3.6 V
VVCCI VCC Inhibit 1.55 V
VCC= 3.3V SCL at 1MHz 0.25 0.5 mA
ICC2 VCC= 3.3V 1 3 mA
ICC3
Supply Current,
Standby (1)
1. Values are based on device characterization, not 100% tested in production.
VCC= 1.65V. SCL=SDA=1.65V
@25C 1 3
µA
@85C 6 11
VCC= 3.3V. SCL=SDA=3.3V
@25C2.2 3
@85C11 17
IIL Input Leakage SCL, SDA, WP, E0, E1, E2,VIN=0V or +1µA
IOL Output Leakage SDA VIN=0V to VCC +1µA
VIL Input Low Voltage SCL, SDA, WP, E0, E1, E2 -0.3 VCC x V
VIH Input High Voltage SCL, SDA, WP, E0, E1, E2 VCC x 0.7 VCC + V
VOL Output Low Voltage SDA IOL = 3.0mA 0.4 V
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11.3 AC Characteristics
Applicable over recommended operating range:
TA = -40°C to +85° C, VCC = 1.65V to 3.6V, CL = CB<100pF
Notes: 1. Thisparameterisensuredbycharacterizationonly.
2. Asatransmitter,thedevicemustprovideaninternalminimumdelaytimetobridgetheundefinedregion(minimum
300ns)ofthefallingedgeofSCLtoavoidunintendedgenerationofSTARTorSTOPconditions.
3. Vcc mustbeinoperatingrange.
4. AdestomemoryproductsbasedonCBRAMtechnologyare“Direct‐Write”memories.Endurancecyclecalculationsfollow
JEDECspecificationJESD22‐A117B.Endurancedatacharacterizedat2.5V,+85°C.Endurancespecificationisidenticalfor
bothbyteandpagewrite(unlikecurrentEEPROMtechnologieswherebytewriteoperationsresultinlowerendurance).
Symbol Parameter Min Typ Max Units
fCLK SCL clock frequency Vcc 1.65V 0 1 MHz
tRI SCL and SDA input rise time (1) 300 ns
tFL SCL and SDA input fall time (1) 100 ns
tSCLH SCL high time 500 ns
tSCLL SCL low time 500 ns
tSTH START condition hold time 250 ns
tSTS START condition setup time 250 ns
tDAH Data input hold time(2) 0ns
tDAS Data input setup time 100 ns
tSTPS STOP condition hold time 250 ns
tWPS WP setup time 600 ns
tWPH WP hold time 1300 ns
tOV Output valid from clock(2) 400 ns
tBFT
Bus free time: time the bus must be free before a new
transmission can start 500 ns
tOF
Output fall time from VIH min to VIL max
CB<100pF 10 + 0.1 CB250 ns
tSP
Input filter spike suppression
SDA and SCL pins
50 ns
tBW Byte write cycle time (one byte) 60 100 µs
tPW Page Write Cycle Time, 64 byte page (up to 30K write cycles) 3 5
ms
Page Write Cycle Time, 64 byte page (up to 100K write cycles) 18
tPUD Vcc power-up delay(3) 75 µs
Endurance
100,000(4) Write
Cycles
Unlimited Read
Cycles
Retention 40 Years
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12. Typical Characteristics
Figure 12-1. Icc3, Supply Current, Standby
Average Icc_Standby vs Temp and Vcc
-40 0 23 55 85
10
9
8
7
6
5
4
3
2
1
0
Current
Temperature
Volta ge
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13. Mechanical Dimensions
13.1 SN (JEDEC SOIC)
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.05
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
ØØ 0° – 8°
ØØ
EE
11
NN
TOP VIEWTOP VIEW
CC
E1E1
END VIEW
AA
bb
LL
A1A1
ee
DD
SIDE VIEWSIDE VIEW
Package Drawing Contact:
contact@adestotech.com
8S1 G
8/20/14
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
8S1, 8-lead (0.150” Wide Body), Plastic Gull
Wing Small Outline (JEDEC SOIC) SWB
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13.2 MA – 2x3 UDFN
TITLE DRAWING NO.GPC REV.
Package Drawing Contact:
contact@adestotech.com
®
8MA3YCQ GT
8MA3, 8-pad, 2 x 3 x 0.6 mm Body, 0.5 mm Pitch,
1.6 x 0.2 mm Exposed Pad, Saw Singulated
Thermally Enhanced Plastic Ultra Thin Dual
Flat No Lead Package (UDFN/USON)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX
A 0.45 0.60
A1 0.00 0.05
A3 0.150 REF
b 0.20 0.30
D 2.00 BSC
D2 1.50 1.60 1.70
E 3.00 BSC
E2 0.10 0.20 0.30
e 0.50 BSC
L 0.40 0.45 0.50
L1 0.00 0.10
L3 0.30 0.50
eee – – 0.08
8/26/14
Notes: 1. All dimensions are in mm. Angles in degrees.
2. Bilateral coplanarity zone applies to the exposed heat
sink slug as well as the terminals.
D
14
PIN 1 ID
E
5
23
678
eee
1
4
8
5
E2
D2
L3 L
Chamfer or half-circle
notch for Pin 1 indicator.
L1
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13.3 TA-TSSOP
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13.4 CS6- 6-Ball WLCSP
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14. Ordering Information
14.1 Ordering Detail
14.2 Ordering Codes
RM24C256C-LSNI-T
Device Type Shipping Carrier Option
RM24C = I2C serial access EEPROM B = Tube
T = Tape & Reel
Density Grade & Temperature
I = Green, NiPd Au lead finish,
Industrial temperature (-40-85°C)
Device/Die Revision
Package Option
C
SN = 8 lead 0.150” SOIC, Narrow
TA = 8 lead TSSOP
MA = 8 pad 2 x 3 x 0.6 mm UDFN
CS = Wafer Level Chip Scale
Operating Voltage
L = 1.65V to 3.6V
256 = 256Kbit
Ordering Code Package Density
Operating
Voltage
Device
Grade
Ship
Carrier Qty. Carrier
RM24C256C-LSNI-B
SN
256 Kbit 1.65V to 3.6V
Industrial
(-40C to
85C)
Tube 100
RM24C256C-LSNI-T
Reel 4000
RM24C256C-LTAI-B
TA
Tube 100
RM24C256C-LTAI-T
Reel 4000
RM24C256C-LMAI-T
MA Reel 5000
RM24C256C-LCSI-T
CS Contact Factory
Package Type
SN 8-lead 0.150" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
TA 8-lead 3 x 4.4 mm, Thin Shrink Small Outline Package
MA 8-pad, 2 x 3 x 0.6 mm, Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN)
CS Wafer Level Chip Scale Package
2 1
RM24C256C-L
DS-RM24C256C-L–081F–11/2016
15. Revision History
Doc. Rev. Date Comments
RM24C256C-081A 7/2015 Initial document release.
RM24C256C-081B 9/2015 Corrected endurance specification. Document status changed to Preliminary.
RM24C256C-L-081C 9/2015 Added WLCSP package option. Corrected UDFN ordering code. Updated typical byte and
page write specifications. Updated document name to RM24C256C-L.
RM24C256C-L-081D 1/2016 Corrected Temperature Grade to Industrial (-40C to 85C).
RM24C256C-L-081E 4/2016 Updated Icc3 specification. Added Typical Characteristics Figure 12-1.
RM24C256C-L-081F 11/2016 Updated Endurance and Data Retention specifications. Updated TPW and TBW
specifications,.
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Phone: (+1) 408.400.0578
Email: contact@adestotech.com
© 2016 Adesto Technologies. All rights reserved. / Rev.: DS-RM24C256C-L–081F–11/2016
Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms
and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications
detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by the
Company in connection with the sale of Adesto products, expressly or by implication. Adesto's products are not authorized for use as critical components in life support devices or systems.
For Release Only Under Non-Disclosure Agreement (NDA)
Adesto®, the Adesto logo, CBRAM®, and DataFlash® are registered trademarks or trademarks of Adesto Technologies. All other marks are the property of their respective
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