
SD1018-06
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DESCRIPTION:
The SD1018-06 is an epitaxial silicon NPN planar transistor
designed primarily for VHF mobile and marine transmitters.
The device utilizes ballasted emitter resistors and improved
metallization systems to achieve extreme ruggedness under
severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 36.0 V
VCEO Collector-Emitter Voltage 18.0 V
Vces Collector-Emitter Voltage 36.0 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current 6.0 A
PDISS Power Dissipation 80.0 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature -65 to +150 °C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 2.2 °C/W
Features
• FM CLASS C TRANSISTOR
• 175 MHz
• 12.5 Volts
• POUT = 40 W MIN.
• GP = 4.5 dB GAIN
• EFFICIENCY 70%
• COMMON EMITTER
RF AND MICROWAVE TRANSISTORS
VHF AND FM MOBILE APPLICATIONS