A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 40 V
BVCEO IC = 1.0 mA 28 V
BVEBO IE = 1.0 mA 3.5 V
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
COB VCB = 28 f = 1.0 MHz 5.0 pF
PGVCE = 24 V IC = 200 mA f = 400 MHz
POUT = 1.0 W 13 15 dB
P1dB VCE = 24 V IC = 200 mA f = 400 MHz 2.0 W
NPN RF POWER TRANSISTOR
TPM401
DESCRIPTION:
The TPM401 is a Common Emitter
Device Designed for Class A and AB
Amplifier Applications up to 1.0 GHz.
FEATURES INCLUDE:
•• High Gain
•• Gold Metallization
•• Emitter Ballasting
MAXIMUM RATINGS
IC400 mA
VCBO 40 V
PDISS 8.75 W @ TC = 25 OC
TJ-55 OC to+200 OC
TSTG -55 OC to+200 OC
θθJC 20 OC/W
PACKAGE STYLE 280 4L STUD
1 = Collector 2 = Base
3 & 4 = Emitter
