CCD area image sensor
S7963, S7964, S7965
■ Absolute maximum ratings
Parameter Symbol Min. Typ. Max. Unit
Operating temperature Topr -50 - +30 °C
Storage temperature Ts t g -50 -+70 °C
OD voltage VOD -0.5 - +25 V
RD voltage VRD -0.5 -+18 V
SG voltage VSG -10 - +15 V
OG voltage VOG -10 -+15 V
RG voltage VRG -10 - +15 V
All vertical clock VP1V, VP2V -10 -+15 V
All horizontal clock VP1H, VP2H -10 - +15 V
Note) All voltage are respect to the SS terminal.
■ Operating conditions (MPP mode)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 18 20 22 V
Reset drain voltage VRD 11.5 12 12.5 V
Output gate voltage VOG 135V
Substrate voltage Vss - 0 - V
High VP1VH, VP2VH 4 6 8
Vertical shift register clock voltage Low VP1VL, VP2VL -9 -8 -7 V
High VP1HH, VP2HH 4 6 8
Horizontal shift register clock voltage Low VP1HL, VP2HL -9 -8 -7 V
High VSGH 4 6 8
Summing gate voltage Low VSGL -9 -8 -7 V
High VRGH 4 6 8
Reset gate voltage Low VRGL -9 -8 -7 V
■ Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency fc - 80 k 1 M Hz
Reset clock frequency frg -80 k 1 M Hz
Vertical shift register capacitance (S7965) CP1V, CP2V - 300 - pF
Horizontal shift register capacitance (S7965) CP1H, CP2H -100 -pF
Summing gate capacitance CSG -7-pF
Reset gate capacitance CRG - 7 - pF
Charge transfer efficiency *1CTE 0.99995 0.99999 - -
DC output level *2Vout 12 15 18 V
Output impedance *2Zo - 3 k - W
Power consumption *2, *3P - 15 -mW
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: VOD=20 V, Load resistance=22 kW
*3: Power consumption of the on chip amplifier.
■ Electrical and optical characteristics (Ta =0 °C, unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Saturation output voltage Vsat Fw × Sv V
Vertical 150 300 -
Full well capacity Horizontal (Summing) Fw 1,500 3,000 -ke-
CCD node sensitivity Sv - 0.6 - µV / e-
25 °C -4,000 12,000Dark current *4
(MPP mode) 0 °C DS -200 600 e- /pixel/s
Readout noise *5Nr - 30 (TBD) 60 e-rms
Area scanning 2,500 10,000 -
Dynamic range Line binning DR 25,000 100,000 --
Photo response non-uniformity *6PRNU - ±3 ±10 %
Spectral response range *7l-200 to 1100 -nm
*4: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*5: -40 °C, Readout frequency is 80 kHz.
*6: Measured at the half of the full well capacity output.
*7: No window material below 200 nm
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