. SBL1630PTSBL1660PT VISHAY Vishay Lite-On Power Semiconductor 16A Schottky Barrier Rectifier Features @ Schottky barrier chip @ Guard ring die constuction for transient protection Low power loss, high efficiency High current capability and low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection application @ Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage SBL1630PT | Varn 30 Vv =Working peak reverse voltage SBL1635PT | =Vrwm 35 Vv =DC Blocking voltage SBL1640PT =VR 40 V SBL1645PT 45 Vv SBL1650PT 50 Vv SBL1660PT 60 Vv Peak forward surge current lesm 250 A Average forward current Tce=95C IFay 16 A Junction and storage temperature range T=Tstg_ | -65...4150 | C Electrical Characteristics = 25C Forward voltage Ip=8A, Tc=25C | SBL1630PT-SBL1645PT Ve 055 | V SBL1650PTSBL1660PT VE 0.70 | V Reverse current Tce=25C IR 0.5 | mA Te=1 00C IR 50 mA Diode capacitance | VR=4V, f=1MHz Cp 700 pF Thermal resistance | T_=const. Rthuc 3.5 KAW junction to case Rev. A2, 24-Jun-98 1 (4)SBL1630PTSBL1660PT Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) leay Average Forward Current (A) 15346 20 16 12 0 50 100 150 Tamb Ambient Temperature ( C ) Figure 1. Max. Average Forward Current vs. |. Forward Current (A) 18359 Ambient Temperature 100 BL1630PT SBL1 10 SBL1650PT SBL1660PT 1.0 Tj = 25C IF Pulse Width = 300 ps 2% Duty Cycle 0.1 0.2 0.4 0.6 0.8 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage legy7 Peak Forward Surge Current (A) 15360 300 T4401 T T1411 8.3 ms Single Half-Sine-Wave JEDEC method 250 200 X 150 N N N 100 NI] a 50 eel 0 1 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles C,, Diode Capacitance ( pF ) 15361 |, Reverse Current (mA) 18362 4000 1000 10 Tj = 100C 1.0 0.1 1.0 10 100 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage T= 75C 0 40 80 120 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98SBL1630PTSBL1660PT VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm B _H A J ane ! Oo 4 & G technical drawings a according to DIN specifications 14470 Case: molded plastic Polarity: as marked on body Approx. weight: 5.6 grams Mounting position: any Marking: type number TO-3P Dim Min Max A 3.20 3.50 B L59 5.16 C 20.80 21.30 D 19.70 20.20 E 2.10 2.40 O 0.51 0./6 H 15.90 16.40 J 1.70 2.10 K 63.10 03,30 L 3.50 45] M 5.20 5.10 N 4.42 1.22 P 2.90 3.30 R 11.70 12.80 5 4.30 Typical ALL Dimensions in mm Rev. A2, 24-Jun-98SBL1630PTSBL1660PT Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98