AP05N50P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement G BVDSS 500V RDS(ON) 1.4 ID 5.0A S Description The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-220(P) The TO-220 and package is widely preferred for commercial-industrial applications. The good thermal performance and low package cost of the TO-220 Contribute to its wide industry application. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 5.0 A ID@TC=100 Continuous Drain Current, V GS @ 10V 2.8 A 18 A 73.5 W 0.59 W/ 45 mJ 3 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 1.7 /W 62 /W 201022072-1/4 AP05N50P o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.7A - - 1.4 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2.7A - 2.4 - S VDS=500V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125 C) VDS=400V, VGS=0V - - 250 uA Gate-Source Leakage VGS=20V - - 100 nA ID=3.1A - 19 30 nC IDSS o Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=400V - 4.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6.3 - nC 3 td(on) Turn-on Delay Time VDD=250V - 11 - ns tr Rise Time ID=3.1A - 8 - ns td(off) Turn-off Delay Time RG=12,VGS=10V - 32 - ns tf Fall Time RD=80.6 - 10 - ns Ciss Input Capacitance VGS=0V - 985 1580 pF Coss Output Capacitance VDS=25V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3.3 - pF Rg Gate Resistance f=1.0MHz - 2.5 3.8 Min. Typ. Max. Units Tj=25, IS=4.5A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions trr Reverse Recovery Time IS=3.1A, VGS=0V, - 300 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 2.6 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 , IAS=3A. 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP05N50P 5 5 o T C =25 C 4 ID , Drain Current (A) ID , Drain Current (A) 4 10V 7 .0V 6 .0V 5 .0 V T C =150 o C 10V 7.0V 6.0V 3 5.0V 2 3 2 V G = 4.0V 1 1 V G =4.0V 0 0 0 2 4 6 0 8 V DS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 Normalized BVDSS (V) I D =2.7A V G =10V Normalized RDS(ON) 1.1 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction 50 100 150 Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.5 T j = 150 o C Normalized VGS(th) (V) 10 IS (A) 0 T j , Junction Temperature ( o C ) T j = 25 o C 1 1 0.5 0 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP05N50P f=1.0MHz 10000 16 V DS =260V V DS =320V V DS =400V 12 C iss C (pF) VGS , Gate to Source Voltage (V) I D =3.1A 8 100 C oss 4 C rss 0 1 0 10 20 30 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 ID (A) 100us 1ms 1 o T c =25 C Single Pulse 10ms 100m 1s DC 0.1 1 10 100 1000 Normalized Thermal Response (Rthjc) 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 0.01 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 A E Millimeters SYMBOLS L2 L5 c1 D L4 b1 L3 MIN NOM MAX A 4.25 4.48 4.70 b b1 c c1 0.65 0.80 0.90 1.15 1.38 1.60 0.40 0.50 0.60 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 L1 L c b e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.6 3.10 3.6 L4 14.70 15.50 16 L5 6.30 6.50 6.70 3.50 3.60 3.70 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number Package Code 05N50P LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence