AST Aap ID STATE High Speed Power Transistors O1 G E SOL DE 3875084) 001708? 4 pc-27-97 | L 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors For Small-Signal Applications In Industrial and Commercial Equipment 2N2102 Features: = Gain bandwidth product (fr) = 120 MHz (typ.); usetu! in applications from dc to 20 MHz = High breakdown voltage: Vierrceo = 120 V min. at lc =0.1 MA = Low saturation voltages: Vce(sat) = 0.5 V max. at fe = 150 MA Vee(sat) = 7.7 V max. at lc = 150 mA = Beta (Hre) controlled over decades of Ic The RCA-2N1613 and 2N2102 are silicon n-p-n planar transistors intended for a wide variety of small-signal and medium-power applications in military and industrial equipment. They feature exceptionally low noise, tow leakage, high switching speed, and high pulsed beta. RCA-2N2102 Is a direct replacement for the 2N1613. In addition, because of its junction design, the 2N2102 has higher breakdown-voltage ratings, higher dissipation ratings, lower saturation voltages, higher sustaining voltages, and lower output capacitance. These transistors are supplied in the JEDEC TO-205AD hermetic package. Features for Both Types: = For operation at junction temperature up to 200C Planar construction for low noise and low leakage Low output capacitance MAXIMUM RATINGS, Absolute-Maximum Values: * In accordance with JEDEC registration data format. 2N2102 2N1613 * VOEO cecccet cece cer ce cee eee et net bee a eet nee RE eRe ee R SEER EG Le EEC Ea FEE Ce TORE ARES OED 120 75 Vv * Vcen(sus) Ree = 102 80 50 v * Veeolsus) 65 - Vv * Vepo oeaee 7 7 Vv loci c ec cece cece cece ee eee een cede eee neat e eee RED EH SEETHER ESCORT HEROES REET TEESE ESI OOS tt 1 A * Pr: At Te S 28C... eee cece rene nee neneeteneereneees dav ae senna esas seneereneecenee renee 5 3 Ww AU TAS 25C ccccccsecnc cert eerste eens sent e tenes eee ene tee setae Eee ee Denese raat er ees 1 0.8 w At Te > 25C........ +a. Derate linearly 2.86 17.1 mWw/?c : At Ta > 25C cece cc ce cece ene e nc cr ene c nner ace e eee reat esr ee nese ee ear nes Darate linearly 5.7 4.57 mw/?c i * Ty Tata setce recs recectcceacarteesrceensasenenceee wees ccenrouteneneees dea ceenvccensaceee -65 to +200 C * Ti (During soldering): At distance = 1/16 in. (1.58 mm) from seating plane for10s MAX. ....eeeceeseenees tees 300 c File Number 106 TERMINAL DESIGNATIONS CicASE) 8208-27512 JEDEC TO-205AD 0630 C-09_ GE SOLID STATE OL ve Waazscax aoe of 3875081 GE SOLID STATE 7088) = DT" 27-19 High-Speed Power Transistors 2N1613, 2N2102 ELECTRICAL CHARACTERISTICS, At Case Temperature (T/ = 25C unless otherwise specified TEST CONDITIONS LIMITS cHaracteristic | Voltage | Current | onie613 2N2102 | UNITS Vdc mA dc Vos VcEl le Ip Min. Max. Min. Max. * IcBo 60 - 0.01 - 0.002 A At Tc=150C 60 - 10 - 2 B Vep=5 V 0 | 0.01 | 0.002 | pA 70 [0.01 _ - 10 - i0 10.1 20 - 20 - *) hee 10 | 108 35 ~ 35 - 10 | 1508 40| 120 | 40] 120 10 $5002 20 - 25 = At To=55C 10 | 10a 20 _ 20 - *) YRT Vep@=1-5 V.Ie=0 - | 120 - V | ViprycBo Ic=0 0.1 75 1120 = V *| VipR)EBO Ie=0.1 mA 0 7 _ 7 - Vv I Vee (sus) 1002 ;0 | - 65 - Vv *l Ver (sus) Rpe=10 2 1008 50 - 80 - Vv #1 Vee lsat) 1508 115] 1.3 - 11 Vv | Vg (sat) 4504 |15]) 1.5 - 0.5 Vv "Thee 5 1 30! 100 | 30] 100 f=1 kHz 10 | 5 35 | 150 | 35] 150 | Ptel f=20 MHz 10 | 50 3 - 3 - "Thin 5 1 24 | 34 24 34 2 f=1 kHz 10 5 4 8 4 8 Th 5 1 [3x10-4 | |3x10-4 10 1 |3x10-4 |} - f=1 kHz 10 5 - - |3x10-4 * | hob 5 1 0.05| 0.5 [0.01] 0.6 mho f=1 kHz 10 5 0.05| 05 }0.01 1 M . Cob ig=0 10 _ 25 - 15 pF "lip Vep=0.5V 0 ~ 80 - 80 pF INE BW=1 Hz Ref.sig.freq.=1 kHz Rg=510 2(2N1613) | 10 0.3 12 - 6 dB ZG=1000 91(2N2102) Teg tt, + tp? - | 30 |- 30 ns Rese - 58.3 - 35 bow RaJA | 219 175 * In accordance with JEDEC registration data format. 4 Pulsed, pulse duration=300 ys, duty factor=1.8% (2N2102) < 2% (2N1613). D see Fig. 14. 91 0631 c-10G E SOLID STATE Ol DEM 2475081 0017085 e i 3875081 GE SOLID STATE Giz i7oss) oD OTL tT High-Speed Power Transistors 2N1613, 2N2102 MAXIMUM TRANSISTOR DISSIPATION- WATTS MAXIMUM TRANSISTOR DISSIPATION=WATTS: 200 -75 -50 -25 0 25 50 75 100 125 160 175 200 TEMPERATURE C S2cs-H73R2 92cs~INT2A2 Fig. 1 Rating chart for 2N1613. Fig. 2 - Rating chart for 2N2102. CIRCUIT, BASE INPUT. : 2 TO-EMTTER VOLTAGE (Veg) #10 & e 2 i : 5. a2 a os i = go =r & Se g a 5 au o Zu I oz s g fe = ar 5 8 | COLLECTOR CURRENT (Ic)mA COLLECTOR CURRENT (I) mA sacs-mimAz 92cS-INGIR3 Fig. 3 Typical de beta characteristics for Fig. 4 Typical smatt-signal beta character- t both types. istics for both types. i AMBIENT TEMPERATURE {Ta} = 25C AMBIENT TEMPERATURE 4 i o ag & 2 a < < 2 3 o e o ay a a 3S o CURRENT < i o 8 EB z g 5 3 5 e S a = un 5 o COLLECTOR-TO-EMITTER VOLTAGE (Vce?V COLLECTOR-TO-EMITTER VOLTAGE (VcelV 92CS-I2667R! 92CS-12665R1 Fig. 5 Typical output characteristics Fig. 6 - Typical output characteristics for for both types. both types at Ta = 100C. 92 0632 c-ilG E SOLID STATE OL peg 3a750a1 0017050 4 I 3875081 G E SOLID STATE C1E 17090 dp T-27-19 High Speed Power Transistors 2N1613, 2N2102 AMBIENT TEMPERATURE (Tal *-59C COLLECTOR CURRENT (I)maA COLLECTOR CURRENT {I)- mA COLLECTOR-TO-EMITTER VOLTAGE (VcelV COLLECTOR-TO-EMITTER VOLTAGE (VogIV S2c8-[ITERS 92s-12668R1 Fig. 7 Typical high-current output Fig. 8 Typical output characteristics for characteristics for both types. both types at Tq = 58C. COMMON-EMITTER CIRCUIT, BASE INPUT. COLLECTOR-TO-EMITTER VOLTAGE(VCE]*0 AMBIENT TEMPERATURE {Ta)= 25C NERATOR RESISTANCE (Rg} = SIO OHMS GE SIGNAL FREQUENCY | kHz MEASUREMENTCIRCUIT BANOWIOTH =| Hz AMBIENT TEMPERATURE { 2 3 I g 8 g 8 5 g 5 % 4 oO oO COLLECTOR CURRENT (I) mA GASE-TO-EMITTER VOLTAGE (Vpe)- . 92cS-12220R2 92S-HIBSA2 i Fig. 9 Typical noise figure characteristics Fig. 10 Typical transfer cheracteristics for for both types. both types. oe rE COMMON-EMITTER CIRCUIT, BASE INPUT COLLECTOR CURRENT (Ig) #100 mA{PULSED! AMBIENT TEMPERATURE {T, 25% COMMON-EMITTER CIRCUIT, BASE INPUT COLLECTOR CURRENT (Ic]= 100 mA (PULSEO} . AMBIENT TEMPERATURE (Ta) + 25C oo Ae neem THe ORE > f L rs f 3 3 t 108 EXTERNAL GASE-TO-EMITTER RE TANCE oe i EXTERNAL BASE-TO-ENITTER RESISTANCE (Rpe}OHMS u o st (Rpg) OHMS ioaes i Fig. 11 Typical sustaining voltage vs. base-to- Fig. 12 Typical sustaining voltage vs. base-to- : emitter resistance for 2N1613. emitter resistance for 2N2102. . 93 0633 C-12G E SOLID STATE ; OL DE High-Speed Power Transistors 2N1613, 2N2102 JUNCTION TEMPERATURE (Ty)-"C g2eg-1I70R2 Fig. 13 ~ Typical leakage characteristics for both types. 46750481 0017091 0 I 27-17 50 V +20 IK Aig 40 R ouTPUT 3 TO 47K SAMPLING OSCILLOSCOPE 0,01 pF INPUT pS FROM Sa 1 - Sov PULSE, Or fe GENERATOR 10 eR 7} auc aesistance yatues W ARE IN OHMS = TYPE IN3064 pe IS ns HY +20 V. atv +18 V INPUT PULSE _ WAVE FORM OES FORME 10% 7 so f ctf 0 BY L tg le to ath, S2CS-NSZIRS Fig. 14 Circuit for measurement of switehing time, and associated waveforms.