IRFR/U2905Z
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S
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Br eakdow n Vol tage 55 ––– ––– V
∆V(BR)DSS
∆TJ B reak dow n Voltage Tem p. Co eff i c i e nt ––– 0. 053 ––– V /°C
RDS(on) Static D r ain-to-Source On-Resistan c e ––– 11.1 14.5 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gf s F orw a r d Trans co nduc tance 20 ––– ––– S
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-S ource Reverse Leakage ––– ––– -200
QgTotal Gate Charge ––– 29 44
Qgs Gate-to-Source Charge ––– 7.7 ––– nC
Qgd Ga t e - to- Dr ain ( " M ill e r " ) Ch ar g e ––– 12 –––
RGGat e In put Resistance ––– 1.3 ––– Ωf = 1MHz, open drain
td(on) Tur n - O n Delay Tim e ––– 14 –––
trRise Time –––66–––
td(off) Turn-Off Delay Time ––– 3 1 ––– ns
tfFall Time –––35–––
LDInte rnal Drain Indu ctance ––– 4 .5 ––– Between lead,
nH 6mm (0.25in.)
LSInte r nal Sour ce Ind uctance ––– 7.5 ––– f rom package
and center of die contact
Ciss In put Capaci tance ––– 1380 –––
Coss O utput Cap acitance ––– 240 –––
Crss Reverse Tr ansfer C apacita nce ––– 120 ––– pF
Coss O utput Cap acitance ––– 820 –––
Coss O utput Cap acitance ––– 190 –––
Coss eff . Effe cti ve Output Capacitance ––– 300 –––
Source-Drain Ratin
s and Characteristics
Paramet e r Min . Typ . M a x . Un its
ISCo nti n uous S o ur c e Cu r rent ––– – –– 36
(Body Diode) A
ISM Pulsed Source Current ––– ––– 240
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reve r se Recovery Time ––– 23 3 5 ns
Qrr Reverse Reco ver y Charge ––– 16 24 nC
ton Forward Turn-On Time Intrinsic turn-on time is neg ligible (turn-on is domina ted by LS+LD)
VGS = 0 V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0 V, VDS = 44V, ƒ = 1. 0M Hz
VGS = 0V, VDS = 0V to 44 V
f
VGS = 10V
e
VDD = 28V
ID = 36A
RG = 15 Ω
TJ = 25°C, IS = 36A, VGS = 0V
e
TJ = 25°C, IF = 36 A, VDD = 28V
di /dt = 100A/ µ s
e
Conditions
VGS = 0V, ID = 25 0µA
Refe ren c e to 25°C, ID = 1mA
VGS = 10V, ID = 36A
e
VDS = VGS, ID = 250µ A
VDS = 55V , V GS = 0V
VDS = 55V , V GS = 0V , TJ = 12 5°C
MOSFET symbol
showing the
integra l revers e
p-n junction diod e.
VDS = 25V , I D = 36A
ID = 36A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1. 0M H z
VGS = 20V
VGS = -20V
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