RF SOP 1 Form A Low on-resistance (AQV22NS)
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the two initial letters of the part number “AQ” and the packing style indicator “X” or “Z” are not marked on the relay.
(Ex. the label for product number AQV227NS is V227NS)
RATING
Miniature SOP6-pin type
featuring lo w on-resistance
with 200V/400V
load voltage RF SOP 1 F orm A
Low on-resistance (AQV22NS)
Output rating*
Package
Part No. Packing quantity
Load
voltage Load
current Tube packing style Tape and reel packing style Tube Tape and reel
Picked from the
1/2/3-pin side Picked from the
4/5/6-pin side
AC/DC
dual use
200 V 50 mA SOP6-pin AQV227NS AQV227NSX AQV227NSZ 1 tube contains:
75 pcs.
1 batch contains:
1,000 pcs.
1,000 pcs.
400 V 40 mA AQV224NS AQV224NSX AQV224NSZ
mm inch
FEATURES
1. Miniature SOP4-pin package
(W) 4.4 × (L) 6.3 × (H) 2.1 mm (W) .173×
(L) .248× (H) .083 inch —approx. 25% of
the volume and 50% of the footprint size
of DIP type PhotoMOS Relays.
2. Low output capacitance and high
response speed
The capacitance between output
terminals is small; typ. 10pF. This
enables a fast operation speed of typ.
0.1ms (AQY224NS).
3. Low-level off state leakage current
4. Controls low-level analog signals
TYPICAL APPLICATIONS
• Telephones
• Measuring instruments
• Computers
• Industrial robots
• High-speed inspection machines
6.3±0.2 4.4±0.2
2.1±0.2
.248±.008 .173±.008
.083±.008
1
2
3
6
5
4
Compliance with RoHS Directive
Volume
(SOP)(DIP) Approx. 25%
Footprint Approx. 50%
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item Symbol Type of
connection AQV227NS AQV224NS Remarks
Input
LED forward current IF50 mA
LED reverse voltage VR5 V
Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation Pin 75 mW
Output
Load voltage (peak AC) VL200 V 400 V
Continuous load current IL
A 0.05 A 0.04 A A connection: Peak AC, DC
B, C connection: DC
B 0.06 A 0.05 A
C 0.08 A 0.06 A
Peak load current Ipeak 0.15 A 0.12 A A connection: 100 ms (1 shot),
VL = DC
Power dissipation Pout 450 mW
Total power dissipation PT500 mW
I/O isolation voltage Viso 1,500 V A C
Temperature
limits Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low
temperatures
Storage Tstg –40°C to +100°C –40°F to +212°F
PhotoMOS.book Page 197 Thursday, March 26, 2009 2:21 PM
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.
RF SOP 1 Form A Low on-resistance (AQV22NS)
2. Electrical characteristics (Ambient temperature: 25°C 77°F)
*Turn on/Turn off time
RECOMMENDED OPERATING CONDITIONS
Please obey the following conditions to ensure proper relay operation and resetting.
For Dimensions
For Schematic and Wiring Diagrams
For Cautions for Use
These products are not designed for automotive use.
If you are considering to use these products for automotive applications, please contact your local Panasonic Electric
Works technical representative.
For more information
Item Symbol Type of
connection AQV227NS AQV224NS Remarks
Input
LED operate current Typical IFon 0.7 mA IL = Max.
Maximum 3 mA
LED turn off current Minimum IFoff 0.4 mA IL = Max.
Typical 0.65 mA
LED dropout voltage Typical VF1.25 V (1.14 V at IF = 5 mA) IF = 50 mA
Maximum 1.5 V
Output
On resistance
Typical Ron A30
70
IF = 5 mA
IL = Max.
Within 1 s on time
Maximum 50
100
Typical Ron B16 55 IF = 5 mA
IL = Max.
Within 1 s on time
Maximum 25
70
Typical Ron C8 28 IF = 5 mA
IL = Max.
Within 1 s on time
Maximum 12.5
35
Output capacitance Typical Cout 10 pF IF = 0
VB = 0
f = 1 MHz
Maximum 15 pF
Off state leakage current Maximum Ileak 10 nA IF = 0
VL = Max.
Transfer
characteristics
Turn on time* Typical Ton 0.12 ms 0.1 ms IF = 5 mA
IL = Max.
Maximum 0.5 ms
Turn off time* Typical Toff 0.05 ms IF = 5 mA
IL = Max.
Maximum 0.2 ms
I/O capacitance Typical Ciso 0.8 pF f = 1 MHz
VB = 0
Maximum 1.5 pF
Initial I/O isolation resistance Minimum Riso 1,000 M500 V DC
Item Symbol Recommended value Unit
Input LED current IF5 mA
Ton
Input
Output 10%
90%
Toff
PhotoMOS.book Page 198 Thursday, March 26, 2009 2:21 PM
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.
RF SOP 1 Form A Low on-resistance (AQV22NS)
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
Type of connection: A
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3. Turn on time vs. ambient temperature
characteristics
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
50
100
150
0 20 40 60
–20
8085
100–40
AQV227NS
AQV224NS
Ambient temperature, °C
Load current, mA
0
40
60
80
100
–40
120
0–20 20 40 60
8085
20
AQV224NS
AQV227NS
Ambient temperature, °C
On resistance,
0
0.4
0.6
–40
1.0
0 20 40 60
80
0.2
0.8
–20
AQV227NS
AQV224NS
85
Turn on time, ms
Ambient temperature, °C
4. Turn off time vs. ambient temperature
characteristics
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6. LED turn off current vs. ambient temperature
characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
0.2
0.3
–40
0.5
0 20 40 60
80
0.1
0.4
–20
85
AQV227NS
AQV224NS,
Ambient temperature, °C
Turn off time, ms
0
2
3
–40
5
0 20 40 60
80
1
4
–20
AQV227NS
85
AQV224NS
LED operate current, mA
Ambient temperature, °C
0
2
3
–40
5
0 20 40 60
80
1
4
–20
85
AQV227NS
AQV224NS
Ambient temperature, °C
LED turn off current, mA
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types;
LED current: 5 to 50 mA
8. Voltage vs. current characteristics of output
at MOS portion
Measured por tion: between terminals 5 and 6,
7 and 8;
Ambient temperature: 25°C 77°F
9. Off state leakage current
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
0
1.0
1.1
1.2
1.3
–40 0–20 20 40 60
80
1.4
50mA
30mA
20mA
10mA
5mA
1.5
85
Ambient temperature, °C
LED dropout voltage, V
431
–4 –3 –1
–150
–50
150
50
100
–100
–2 2
AQV227NS
AQV224NS
Voltage, V
Current, mA
0300 400
10–6
10–9
10–12
AQV224NS
100 200
AQV227NS
Load voltage, V
Off state leakage current, A
PhotoMOS.book Page 199 Thursday, March 26, 2009 2:21 PM
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.
RF SOP 1 Form A Low on-resistance (AQV22NS)
10. LED forward current vs. turn on time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
11. LED forward current vs. turn off time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
12. Applied voltage vs. output capacitance
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz, 30 mVrms;
Ambient temperature: 25°C 77°F
0
0.2
0.4
0.6
0.8
1.4
1.0
10 20 30 40 50 60
1.2
0
AQV224NS,AQV227NS
LED forward current, mA
Turn on time, ms
0
0.06
0.10
0.18
0.14
10 20 30 40
0.22
50 60
AQV224NS
0
AQV227NS
LED forward current, mA
Turn off time, ms
0
2
4
12
20 40 60 80 100
6
8
0
10
AQV227NS
AQV224NS
Applied voltage, V
Output capacitance, pF
13. Isolation characteristics
(50 impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
14. Inser tion loss characteristics
(50 impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
010 10 10
67
10
40
60
80
20
100
45
AQV224NS
AQV227NS
Frequency, Hz
Isolation, dB
010 10 10
67
10
2
3
4
1
5
45
AQV224NS
6
AQV227NS
Frequency, Hz
Insertion loss, dB
PhotoMOS.book Page 200 Thursday, March 26, 2009 2:21 PM
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.