TEXAS INSTR {OPTO? b2 DEP asci7eb oo3n930 2 8961726 TEXAS INSTR COPTO) = 62C 36930 D we , TIP150, TIP151, TIP152 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 See eee High Voltage, High Forward and Clamped Reverse Energy 7-33-29 10 A Peak Collector Current : 80 W at 25C Case Temperature Reverse-Blas SOA... 300 Vto 400 Vat7A VCEX(sus) ... 300 V to 400 V Min at 7A device schematic TO-220A8 PACKAGE EMITTER COLLECTOR ane ae a on eee oe ewes ond BIKQ_ 2702 J THE COLLECTOR IS IN ELECTRICAL E . CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TiP150 | TIP151 TIP152 current current current area at case temperature at case temperature at storage temperature range mm case NOTES: 1. This value applies for ty <5 ms, duty cycle 10%, 2. Derate linearly to 150C case temperature at the rate of 0.64 W/C or refer to Dissipation Derating Curve, Figure 10. 3. Derate linearly to 150C free-air temperature at the rate of 16 mW/C or refer to Dissipation Derating Curve, Figure 11. no o 2 > o a G. - je3 . - i . TEXAS % , 5-189 . INSTRUMENTS . POST OFFICE BOX 225012 @ DALLAS, TEXAS 76266TEXAS INSTR {0PTO} be DEP anti726 oo3e931 4 ( 961726 TEXAS INSTR COPTOD 62c 36931 Dd | [ TIP150, TIP151, TIP152 T-33-29 N-P-N DARLINGTON-CONNECTED . SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature | PARAMETER TEST CONDITIONS TP150 TIP154 TIP162 See Note 4 See Note 4 CEX = VIBRICBO ViBRICEO IcEO : i See Notes 4 and 5 See Notes 4 and 5 See Notes 4 and See Notes 4 and 5 See Notes 4 and 5 =1 See Notes 4 and 5 See Notes 4 and 5 See Notes 4 and 5 VCE{sat) Afe f= 1kHz CE = 6V, Ihtel f= 1MHz cB = 1 Cobo f= 1MHz 100 100 pF | NOTES; 4. These parameters must be measured using pulse techniques, tw = 300 ys, duty cycle < 2%. 5. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts located within vu 3,2 mm (0.125 inch) from the device body. s. a 126 wy 5-190 TEXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR {f0PTO} be DE asu2724 00365932 4 f 8961726 TEXAS INSTR COPTO) 62c 36932 D | : ye at ; TIP150, TIP151, TIP152 | _ N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS all f thermal characteristics . T~33-29 ~ PARAMETER MIN TYP MAX| UNIT CW NOTEG: This parameter is measured using 0,08 mm {0.003-inch} mica insulator with Dow-Coming 11 compound on both sides of the insulator, a 0.138-32 (formerly 6-32} mounting screw with bushing, and a mounting torque of 0.9 newton-meter (8 inch-pounds), resistive-load switching characteristics at 25C case temperatur PARAMETER TEST CONDITIONST MIN TYP MAX] UNIT . ty 20 : t Ic = 5A, IB1 = 250mA, Ip2 = 250mA, 160 ns } ts VBE(off)=_-7-3V, Ry = 509, See Figure 2 3400 t : 1620 T Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. i inductive-load switching characteristics at 25C case temperature PARAMETER TEST CONDITIONST MIN TYP MAX] UNIT tsv j 3900 . "i Viclamp) = Min VcEx (sus): Icm = 5A, = ns ti Ig1 = 250mA, Ig2 = 250mA, SeeFigure 3 1Z00 | tko . 2000 t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. TIP Devices i TEXAS %% 5-191 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR {OPT} be pe ssni7e, 0036933 3 T 8961726 TEXAS INSTR C(OPTO) ; : , 62C 356933 TIP150, TIP151, TIP152 . ; : 1-33-29 ; N-P-N DARLINGTON-CONNECTED : SILICON POWER TRANSISTORS . cone : ; PARAMETER MEASUREMENT INFORMATION INPUT @)seoniron 4914 toa aT" Rppi=8 2 fC I VOLTAGE 1N9141N914 jTUT MONITOR | TY L=200 uH 562 P bee Se yi ms or an uivatent = Vep2=5V +, i 40 nF 1 Zrovave " =z0V eo Vgen | Vep1 ~ 12.5 V ADJUST FOR Von = 10.1 V AT INPUT MONITOR TEST CIRCUIT W1Ve- INPUT MONITOR tom . COORDINATE POINT X" 7A {Sae Note G} MIN VcEXx(sus) VcE d dll INPUT WAVEFORM AND X-Y DISPLAY NOTES: Vgan isa 20-V pulse into a 50 & termination. The Vgen waveform is supplied by a generator with the following characteristics: tp < 16ns, te< 15 ns, Zout = 50Q, tw = 40s, duty cycle < 2%. Waveforms are monitored on an X-Y oscilloscope with the following characteristics: t; < 15 ns, Rin # 10 MQ, Cin < 11.5 pF, . Resistars must be noninductive types. The d-c power supplies may require additional bypassing i in order to minimize ringing. Heavy lines denote copper bus 0.5 inch by 0.125 inch (12,7 mm by 3,2 mm) fabricated to have minimum inductance. . Adjust input pulse duration until collector current is 7 A at point X. Ion must not exceed 10A. SODIAD p> ammoo FIGURE 1. COLLECTOR-EMITTER SUSTAINING VOLTAGE TEST j . TEXAS % INSTRUMENTS POST OFFICE BOX 225012 OALLAS, TEXAS 75265 5-192 D !TEXAS INSTR {OPTOF b2 DEB ase1726 Oogn934 o T 8961726 TEXAS INSTR (OPTO) 62C 36934 D ore TIP150, TIP151, TIP152 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS ew ee ee PARAMETER MEASUREMENT INFORMATION T-33-29 INPUT : MONITOR . ' OUTPUT 14 MONITOR 1NSt4 1N914 #1N814 1N914 | ee 270 pF 02 i = Veco = 260V i Vani 29 V + _ ! . ADJUST FOR . . : Von=27VAT ALR J INPUT MONITOR 7 < a 5 oo eo TEST CIRCUIT Von = 27V ---- INPUT MONITOR Ve- 5 ow, ~7.3V Mert ty : I OUTPUT MONITOR f VOLTAGE WAVEFORMS NOTES: A. Vgenis a 30-V pulse into a 502 termination. : B. The Vgen waveform is supplied by a generator with the following characteristics: t, 18ns, tp< 15ns, Zou, = 5OQ, : tw = 20us, duty cycle < 2%. C. Waveforms are monitored on an oscilloscope with the following characteristics: t, 15ns, Rin = 10 MQ, Cin < 11.5 pF. D, Resistors must be noninductive types. E. The d-c power supplies may require additional bypassing in order to minimize ringing. o 2 > o a a - FIGURE 2. RESISTIVE-LOAD SWITCHING TIMES i , TEXAS % 5-193 INSTRUMENTS POST OFFICE 80X 226012 @ DALLAS, TEXAS 75268TEXAS INSTR {OPTO} b2 DEP aqei72e oose9a5 1 q 8961726 TEXAS INSTR COPTO) 2N6127 Rep2= 252 L=200 pH 6 RCA 40860 or equivalent + A Ven ame Vcc = 20 = Vap2"5V + Vpa1 7 10V ADJUST FOR [ Von= 7.25 VAT pa INPUT MONITOR TEST CIRCUIT Von 7.25 V-- 90% t 62C 36935 Dp ! TIP150, TIP151, TIP152 T-33-29 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS - ae e _ * PARAMETER MEASUREMENT INFORMATION INPUT wonton 4N914 eT! 5 Rapi * 122 . endl i | VOLTAGE 1N9146 0. 1N914 TUT MONITOR INPUT ' . : VOLTAGE oy /--. Semen ee ' SV 7 COLLECTOR i VOLTAGE | Vee | ov--- ! COLLECTOR CURRENT : a ! v 9 WAVEFORMS , NOTES: A. Vgenis a ~30-V pulse into a 509 termination. : Q B. The Vgen waveform is supplied by a generator with tha following characteristics: t, < 15ns, te< 18 Nns, Zout = 50Q, QO. ty = 25ps, duty cycle < 2%. Pulse duration is adjusted forlony = 3A. a C. Waveforms are monitored on an oscilloscope with the following characteristics: ty < 15ns, Rin 2 10 MQ, Cjn < 11.5 pF. | r in in D. Resistors must be noninductive types. E. The d-c power supplies may require additional bypassing in order to minimize ringing. F. Heavy lines denote copper bus 0.5 inch by 0.125 (12,7 mm by 3,2 mm] fabricated to have minimum inductance. FIGURE 3. INDUCTIVE-LOAD SWITCHING TIMES fi 126 u 5-194 XAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR {OPTO} be DER S56172b O935,934 3 gy : _ 8961726 TEXAS INSTR (OPTO? ; 62C 36936 dD | ] Cage te TIP150, TIP151, TIP152 - . N-P-N DARLINGTON-CONNECTED . SILICON POWER TRANSISTORS Lf | TYPICAL CHARACTERISTICS. 7-33-29 COLLECTOR CUTOFF CURRENT STATIC FORWARD CURRENT TRANSFER RATIO 2 vs vs , ; CASE TEMPERATURE COLLECTOR CURRENT i 1k e 10 k i 5 =5V i = ~ 4k See Notes 4 and 5 409F Ve = 400V 5 Te = 126C | # ip =0 % i c | Q t 100 1k Tce =25 Cc : ' E =_ 30 2 40 g 400 Te=-30C -; & z i 5 g 10 E 100 | 68 2 i 1 i o 4 & 40 : us I 2S Ww a 1 = 10 ~50 -25 0 25 50 76 100 125 0.4 1 4 10 Tc Case Temperature C ig Collector Current A FIGURE 4 FIGURE 5 BASE-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE vs VS ~ COLLECTOR CURRENT > COLLECTOR CURRENT 4e7T4T t + IC - 29 B FC 29 r > ip s iF) : | 77 See Notes 4 and 5 < 4and5 2 2 i Hl : = 3 4 | | | o 8 To = 30C 9 i = Lt : cs ; -yTc=-30 abe # 2 : 4 Pi TN Fi -@ 1 g Tc = 125C . : | aE? = 9r?, i w To =325C 8 Tce =25C = : > | S 1 rm] Te = 128C 3 04 1 4 10 2 04 1 4 10 I Collector Current A I Collector Current A f | FIGURE 6 . FIGURE 7 NOTES: 4. These parameters must be measured using pulse techniques, tw = 300 ys, duty cycle 2%, i S. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located . within 3,2 mm (0.128 inch) from the device body. 1283 7 - Ti wy . EXAS 5-195 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 l aTEXAS INSTR COPTOF be DEPpaseize. oosnsa7 s 9 - 8961726 TEXAS INSTR COPTO) e2c 36937 0! . T-33~ TIP150, TIP151, TIP152_. 1-33-29 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS Cooks ont MAXIMUM SAFE OPERATING AREA FORWARD-BIAS SAFE OPERATING AREA REVERSE-BIAS SAFE OPERATING AREA 100 8 Te <25C q 40 ty = 100 ys <7 i Noanrepetitive Pulse Operation 5 10 26 5 - TIP 150 4 p.c Operation = 5 TIP 151 BH TIP 182 3 1 ty = 5 ms =4 $ =e 04 z tw = 1ms Ez 3 3 0.1 = g 2 IP 150 ; <pn (0.04 Tip 151 1 Tc <25C - TIP 152 See Note 7 0.01 - 0 1 4 10 40 100 400 1k 0 100 200 300 400 500 Vee Collector-Emitter Voltage V VCE Collector-Emitter Voltage - V FIGURE 8 FIGURE 9 NOTE 7: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive load as in Figure 1. | THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE = DISSIPATION DERATING CURVE DISSIPATION DERATING CURVE ; 100 #25 & 3 a # 3 3 | a a 8 0, 8 ~~ 5 60 Rese <1.56 CW : 15 \ Raa < 62.5 C/W 0 a a" 3 3 N\ S - 2 a N 5 z @ 9 3 N\ t o 3S E IN E 20 205 < x % s s , 0 fo c 0 25 50 75 100 125 150 0 25 50 75 100 125 150 t Tc Case Temperature C TaFree-Air TemperatureC ; FIGURE 10 FIGURE 171 % - 5-196 TEXAS 289 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 ea