NTE553
Schottky Barrier Diode
Description:
The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF
switching applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR–35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, IF100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, PD150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr –20° to + 60°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, Tstg –45° to + 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R IR = –10µA –35 – – V
Reverse Leakage Current IRVR = –25V – – –0.1 µA
Forward Voltage VFIF = 10mA – – 1.0 V
Diode Capacitance CTVR = –6V, f = 1MHZ– – 1.2 pf
Series Resistance RSIF = 2mA, f = 100MHZ– – 1.2 Ω
Series Inductance LSf = 250MHZ– 3 – nH
Color Band Denotes Cathode
1.000
(25.4)
Min
.200 (5.08)
Max
.090 (2.28) Dia Max.022 (0.509) Dia Max
