Small Signal Product CREAT BY ART
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- RoHS compliant
- Polarity: Indicated by black cathode band
SYMBOL UNIT
P
D
mW
V
RRM
V
I
F(AV)
mA
T
J
, T
STG o
C
Electrical Characteristics SYMBOL UNIT
V
F
V
R
θJA o
C/W
C
J
pF
t
rr
ns
Document Number: DS_S1501002 Version: B15
BAV100 V
R
= 50 V
I
F
= 100 mA
(Note)
V
R
= 0 , f = 1.0 MHz
I
R
Thermal Resistance, Junction to Ambient
Average Rectified Forward Current
Repetitive Peak Reverse Voltage
Power Dissipation
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
BAV103 I
R
= 100 μA
BAV102 I
R
= 100 μA
BAV101 I
R
= 100 μA
BAV100 I
R
= 100 μA
Breakdown Voltage
Reverse Recovery Time - 50
Notes : Reverse recovery test conditions : I
F
= I
R
= 30 mA , I
rr
= 30 mA , R
L
= 100 Ω
I
FSM
PARAMETER
Operating and Storage Temperature Range
B
V
BAV103 V
R
= 200 V
Peak Reverse Current
Junction Capacitance -5.0
350
-
100
nA
100
100
100
BAV102 V
R
= 150 V
BAV101 V
R
= 100 V
V
120
200
250
Forward Voltage -1.0
MIN MAX
60
-
Non-Repetitive Peak Forward
Surge Current A
4.0
-65 to +200
500
250
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER VALUE
1.0
BAV100/101/102/103
Taiwan Semiconductor
Hermeticall
y
Sealed Glass Hi
g
h Volta
g
e Switchin
g
Diodes
FEATURES
MINI MELF
MECHANICAL DATA
Small Signal Product CREAT BY ART
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1501002 Version: B15
BAV100/101/102/103
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
0.1
1
10
100
1000
0 0.4 0.8 1.2 1.6 2
IF- Forward Current (mA)
VF- Forward Voltage (V)
Fig. 2 Forward Current VS. Forward Voltage
Scattering Limit
0.01
0.1
1
10
100
1000
0 40 80 120 160 200
IR- Reverse Current (uA)
Tj - Junction Temperature (oC)
Fig. 1 Reverse Current VS. Junction Temperature
VR= VRRM
1
10
100
1000
0.1 1 10 100
rf - Differential Forward Resistance (Ohm)
IF- Forward Current (mA)
Tj=25oC
Scattering Limit
Fig. 3 Differential Forward Resistance VS. Forward Current
DIMENSIONS
Min Max Min Max
A 3.30 3.70 0.130 0.146
B 1.40 1.60 0.055 0.063
C 0.20 0.50 0.008 0.020
SUGG ESTED PAD LAYOUT
A
B
C
D
Document Number: DS_S1501002 Version: B15
5.00 0.197
1.25 0.049
2.00 0.079
2.50 0.098
DIM. Unit (mm) Unit (inch)
DIM. Unit (mm) Unit (inch)
Typ. Typ.
BAV100/101/102/103
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
MINI MELF
BAV100 L0G
Green compoundcode
Packingcode
Partno.
C
B
A
Small Signal Product
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1501002 Version: B15
BAV100/101/102/103
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
