1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
1.2 Features
nTypical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %:
uOutput power = 20 W
uPower gain = 15.5 dB
uEfficiency = 45 %
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (3.1 GHz to 3.5 GHz)
nInternally matched for ease of use
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 03 — 3 March 2009 Product data sheet
Table 1. Typical performance
Typical RF performance at T
case
=25
°
C; t
p
= 300
µ
s;
δ
= 10 %; I
Dq
= 50 mA; in a class-AB
production test circuit.
Mode of operation f VDS PLGpηDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
Pulsed RF 3.1 to 3.5 32 20 15.5 45 20 10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 2 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
1.3 Applications
nS-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLS6G3135-20 (SOT608A)
1 drain
2 gate
3 source [1]
BLS6G3135S-20 (SOT608B)
1 drain
2 gate
3 source [1]
1
23
sym112
1
3
2
1
2
3
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLS6G3135-20 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A
BLS6G3135S-20 - ceramic earless flanged package; 2 leads SOT608B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 2.1 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 3 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
5. Thermal characteristics
6. Characteristics
7. Application information
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Max Unit
Rth(j-case) thermal resistance from junction
to case Tcase =80°C; PL=20W
tp= 100 µs; δ = 20 % 0.76 0.92 K/W
tp= 300 µs; δ = 10 % 0.79 0.95 K/W
Table 6. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 0.5 mA 60 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 40 mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 1.5 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 6 8.2 - A
IGSS gate leakage current VGS = 8.3 V; VDS = 0 V - - 150 nA
gfs forward transconductance VDS = 10 V; ID= 1.4 A - 2.8 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID= 1.4 A - 0.37 0.58 Ω
Table 7. Application information
Mode of operation: pulsed RF; t
p
= 300
µ
s;
δ
= 10 %; RF performance at V
DS
=32V; I
Dq
=50mA;
T
case
=25
°
C; unless otherwise specified; in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power - 20 - W
VCC supply voltage PL=20W - - 32 V
Gppower gain PL= 20 W 12 15.5 - dB
ηDdrain efficiency PL=20W 40 45 - %
trrise time PL=20W - 20 50 ns
tffall time PL=20W - 10 50 ns
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 4 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
7.1 Impedance information
[1] Measured with ZL optimized for Gp.
7.2 Ruggedness in class-AB operation
The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch
corresponding to VSWR =5:1 through all phases under the following conditions:
VDS = 32 V; IDq = 50 mA; PL= 20 W; tp = 300 µs; δ = 10 %.
Table 8. Typical impedance
f ZSZL (optimized for ηD) ZL (optimized for Gp) Gp(opt) ηD[1]
GHz Ω Ω Ω dB %
3.1 31.24 − j31.07 6.99 + j12.9 13.01 + j14.75 18.08 48.34
3.2 50.56 − j12.48 5.82 + j8.77 11.47 + j11.17 17.97 45.60
3.3 43.66 + j17.27 2.32 + j6.17 10.05 + j10.55 17.75 47.01
3.4 24.13 + j28.47 5.52 + j6.10 9.93 + j8.48 17.91 47.03
3.5 10.56 + j22.21 5.79 + j3.19 9.37 + j5.73 17.68 46.54
Fig 1. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 5 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
7.3 Graphs
VDS =32V; I
Dq = 50 mA; tp= 300 µs; δ=10%;
PL=20W. VDS = 32 V; IDq = 50 mA; tp= 300 µs; δ=10%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values Fig 3. Power gain as a function of load power; typical
values
VDS =32V; I
Dq = 50 mA; tp= 300 µs; δ=10%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 50 mA; tp= 300 µs; δ=10%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 4. Efficiency as a function of load power; typical
values Fig 5. Load power as a function of input power;
typical values
001aaf983
f (GHz)
3 3.63.43.2
11
13
9
15
17
Gp
(dB)
7
ηD
Gp
20
30
10
40
50
0
ηD
(%)
001aaf984
PL (W)
0302010
11
13
9
15
17
Gp
(dB)
7
(2)
(3)
(1)
001aaf985
PL (W)
0302010
30
40
20
50
60
ηD
(%)
10
(1)
(2)
(3)
Pi (W)
0 1.20.80.4
001aaf986
10
20
30
PL
(W)
0
(2) (3) (1)
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 6 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
VDS =32V; I
Dq = 100 mA; tp=50µs; δ=20%;
PL=20W. VDS = 32 V; IDq = 50 mA; tp= 100 µs; δ=20%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 6. Power gain and drain efficiency as functions of
frequency; typical values Fig 7. Power gain as a function of load power; typical
values
VDS =32V; I
Dq = 50 mA; tp= 100 µs; δ=20%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 50 mA; tp= 100 µs; δ=20%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 8. Efficiency as a function of load power; typical
values Fig 9. Load power as a function of input power;
typical values
001aaf987
f (GHz)
3 3.63.43.2
11
13
9
15
17
Gp
(dB)
7
ηD
Gp
20
30
10
40
50
0
ηD
(%)
001aaf988
PL (W)
0302010
10
12
8
14
16
Gp
(dB)
6
(2)
(3)
(1)
001aaf989
PL (W)
0302010
30
40
20
50
60
ηD
(%)
10
(1)
(2)
(3)
Pi (W)
0 1.20.80.4
001aaf990
10
20
30
PL
(W)
0
(2) (3) (1)
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 7 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
8. Test information
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with εr= 6.2 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit
VDD
VGG
R1
C13 C3 C4
C5
C6
C1 C2
C7 L1
C12
C10 C11
C8
C9
λ / 4-line
λ / 4-line
001aah590
Table 9. List of components
See Figure 10.
Component Description Value Remarks
C1, C2, C5, C6, C7, C8, C9 multilayer ceramic chip capacitor 33 pF [1]
C3, C4, C10, C11 multilayer ceramic chip capacitor 470 pF [2]
C12 electrolytic capacitor 47 µF; 63 V
C13 electrolytic capacitor 10 µF; 35 V
L1 copper wire -
R1 resistor 49.9 Ω
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 8 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
9. Package outline
Fig 11. Package outline SOT608A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT608A 01-02-22
02-02-11
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 2 leads SOT608A
p
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
w1AB
M M M
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
7.24
6.99 0.15
0.10 10.21
10.01 10.29
10.03 15.75
14.73 9.91
9.65
4.62
3.76
cU2
0.25 0.5115.24
qw
2
w1
F
1.14
0.89
U1
20.45
20.19
p
3.30
2.92
Q
1.70
1.35
EE
1
10.21
10.01
inches 0.285
0.275 0.006
0.004 0.402
0.394
D1
10.29
10.03
0.405
0.395 0.405
0.395 0.620
0.580 0.390
0.380
0.182
0.148 0.010 0.0200.600
0.045
0.035 0.805
0.795
0.130
0.115 0.067
0.053
0.402
0.394
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 9 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
Fig 12. Package outline SOT608B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT608B
SOT608B
06-11-27
06-12-06
UNIT A
mm 4.62
3.76 7.24
6.99 0.15
0.10 10.29
10.03 10.21
10.01 10.29
10.03 1.14
0.89 1.70
1.35 10.24
9.98 0.51
b
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
Ceramic earless flanged package; 2 leads
0 5 mm
scale
c D
10.21
10.01
D1E E1F H
15.75
14.73
Q U1U2
10.24
9.98
inch 0.182
0.148 0.285
0.275 0.006
0.004 0.405
0.395 0.402
0.394 0.405
0.395 0.045
0.035 0.067
0.053 0.403
0.393 0.020
0.402
0.394 0.620
0.580 0.403
0.393
w1
M
w1A
M
1
2
b
H
A
3
D
A
F
D1
U1
E
E1
U2
c
Q
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 10 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal Oxide Semiconductor
RF Radio Frequency
S-Band Short wave Band
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS6G3135-20_6G3135S-20_3 20090303 Product data sheet - BLS6G3135-20_6G3135S-20_2
Modifications: •Section 7.1 on page 4: Impedance information added
BLS6G3135-20_6G3135S-20_2 20081217 Product data sheet - BLS6G3135-20_6G3135S-20_1
BLS6G3135-20_6G3135S-20_1 20070307 Objective data sheet - -
BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 3 March 2009 11 of 12
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 March 2009
Document identifier: BLS6G3135-20_6G3135S-20_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.2 Ruggedness in class-AB operation. . . . . . . . . . 4
7.3 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
