ASYNCHRONOUS
SRAM 64K x 16 SRAM
WITH SINGLE CHIP ENABLE
REVOLUTIONARY PINOUT
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
Galvantech, Inc. reserves the right to change
products or specifications without notice.
Rev. 1/99
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688 Fax (408) 566-0699Web Site: http://www.galvantech.com
FEATURES
•Fast access times: 10, 12, 15and 20ns
•Fast OE# access times: 5, 6, 7 and 8ns
•Single +5V +10% power supply
•Fully static -- no clock or timing strobes necessary
•All inputs and outputs are TTL-compatible
•Three state outputs
•Center power and ground pins for greater noise immunity
•Easy memory expansion with CE# and OE# options
•Automatic CE# power down
•High-performance, low-power consumption, CMOS
double-poly, double-metal process
•Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil
TSOP
OPTIONSMARKING
•Timing
10ns access -10
12ns access -12
15ns access -15
20ns access -20
•Packages
44-pin SOJ (400 mil) J
44-pin TSOP (400 mil) TS
•Power consumption
Standard None
Low L
•
•Temperature
Commercial None (0°C to 70°C)
Industrial I (-40°C to 85°C)
•
GENERAL DESCRIPTION
The GVT7264A16 is organized as a 65,536 x 16 SRAM
using a four-transistor memory cell with a high performance,
silicon gate, low-power CMOS process. Galvantech SRAMs
are fabricated using double-layer polysilicon, double-layer
metal technology.
This device offers center power and ground pins for
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#), separate byte
enable controls (BLE# and BHE#) and output enable (OE#)
with this organization.
The device offers a low power standby mode when chip
is not selected. This allows system designers to meet low
standby power requirements.
1
2
3
4
5
6
7
8
9
10
32
31
30
29
28
27
26
25
24
23
19
20
21
11
12
13
14
15
16
22
18
17
A6
A7
DQ12
DQ11
NC
A8
A9
A10
A11
OE#
BHE#
DQ16
DQ15
VSS
VCC
A2
A1
DQ3
DQ4
WE#
A15
A14
A13
A12
A0
CE#
DQ1
DQ2
VCC
VSS
A5
A3
PIN ASSIGNMENT
44-Pin SOJ
44-Pin TSOP
33
34
35
36
A4
NC NC
BLE#
41
42
43
44
37
38
39
40
DQ7
DQ8
DQ5
DQ6 DQ10
DQ9
DQ14
DQ13
January 22, 199 92Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
FUNCTIONAL BLOCK DIAGRAM
CE#
ADDRESS BUFFER
ROW DECODER
COLUMN DECODER
MEMORY ARRAY
512 ROWS X 128 X 16
COLUMNS
I/O CONTROL
WE#
OE#
DQ8
DQ1
POWER
DOWN
A15
A0
DQ16
DQ9
BHE#
BLE#
VCC
VSS
January 22, 199 93Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
TRUTH TABLE
PIN DESCRIPTIONS
MODECE#WE#OE#BLE#BHE#DQ1-
DQ8DQ9-
DQ16POWER
LOW BYTE READ (DQ1-DQ8)LHL L HQHIGH-ZACTIVE
HIGH BYTE READ (DQ9-DQ16)LHLHLHIGH-ZQACTIVE
WORD READ (DQ1-DQ16)LHLLLQ Q ACTIVE
LOW BYTE WRITE (DQ1-DQ8)L L XLH D HIGH-ZACTIVE
HIGH BYTE WRITE (DQ9-DQ16)L L XHLHIGH-ZDACTIVE
WORD WRITE (DQ1-DQ16)L L XL L D D ACTIVE
OUTPUT DISABLE
LX X H H HIGH-ZHIGH-ZACTIVE
LH H X X HIGH-ZHIGH-ZACTIVE
STANDBYHXXXXHIGH-ZHIGH-ZSTANDBY
SOJ & TSOP
Pin Number sSYMBO LTYPEDESCRIPTIO N
5, 4, 3, 2, 1, 44, 43,
42, 27, 26, 25, 24,
21, 20, 19, 18
A0-A15InputAddresses Inputs: These inputs determine which cell is addressed .
17 WE#InputWrite Enable: This input determines if the cycle is a READ or WRITE cycle. WE# is LOW
for a WRITE cycle and HIGH for a READ cycle.
6CE#InputChip Enable: This active LOW input is used to enable the device. When CE# is LOW, the
chip is selected. When CE# is HIGH, the chip is disabled and automatically goes into
standby power mode.
39, 40BLE#, BHE#InputByte Enable: These active LOW inputs allow individual bytes to be written or read. When
BLE# is LOW, the data is written to or read from the lower byte (DQ1-DQ8). When BHE# is
LOW, the data is written to or read from the higher byte (DQ9-DQ16) .
41 OE#InputOutput Enable: This active LOW input enables the output drivers .
7, 8, 9, 10, 13, 14,
15, 16, 29, 30, 31,
32, 35, 36, 37, 38
DQ1-DQ16Input/OutputSRAM Data I/O: Data inputs and data outputs. Lower byte is DQ1-DQ8 and upper byte is
DQ9-DQ16.
11, 33VCCSupplyPower Supply: 5V +10%
12, 34VSSSupplyGround
ABSOLUTE MAXIMUM RATINGS *
Voltage on VCC Supply Relative to VSS........-0.5V to +7.0V
VIN ..........................................................-0.5V to VCC+0.5V
Storage Temperature (plastic) ..........................-55oC to +125o
Junction Temperature .....................................................+125o
Power Dissipation ...........................................................1.2W
Short Circuit Output Current .......................................50mA
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.This is a stress
rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
January 22, 199 94Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITION S
(All Temperature Ranges; VCC = 5V +10% unless otherwise noted)
CAPACITANCE
DESCRIPTIO NCONDITION SSYMBO LMINMAXUNITSNOTES
Input High (Logic 1) voltageVIH2.2VCC+1V1, 2
Input Low (Logic 0) VoltageVIl-0.50.8V1, 2
Input Leakage Current0V < VIN < VCCILI-5 5 uA
Output Leakage CurrentOutput(s) disabled,
0V < VOUT < VCCILO-5 5 uA
Output High VoltageIOH = -4.0mA VOH2.4V1
Output Low VoltageIOL = 8.0mA VOL0.4V1
Supply VoltageVCC4.55.5V1
DESCRIPTIO NCONDITION SSYMTYPPOWER-10-12-15-20UNITSNOTES
Power Supply
Current: OperatingDevice selected; CE# < VIL; VCC =MAX;
f=fMAX; outputs openIcc120standard260220190150mA3, 1 4
low240200170130
TTL Standb yCE# >VIH; VCC = MAX; f=fMAXISB125 standard60 55 50 45 mA14
low50 45 40 35
CMOS StandbyCE1# >VCC -0.2; VCC = MAX;
all other inputs < VSS +0.2 or >VCC -0.2;
all inputs static; f= 0
ISB20.02standard10 10 10 10 mA14
low1.01.01.01.0
DESCRIPTIO NCONDITION SSYMBO LMAXUNITSNOTES
Input CapacitanceTA = 25oC; f = 1 MHz
VCC = 5VCI6pF4
Input/Output Capacitance (DQ)CI/O8pF4
January 22, 199 95Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
AC ELECTRICAL CHARACTERISTICS
(Note 5) (All Temperature Ranges; VCC = 5V +10%)
DESCRIPTIO N- 10- 12- 15- 20
SYMMINMAXMINMAXMINMAXMINMANUNITSNOTES
READ Cycle
READ cycle timetRC10 1215 20 ns
Address access timetAA10 1215 20 ns
Chip Enable access timetACE10 1215 20 ns
Output hold from address changetOH3444ns
Chip Enable to output in Low-ZtLZCE3444ns4, 7
Chip disable to output in High-ZtHZCE5678ns4, 6, 7
Output Enable access timetAOE5678ns
Output Enable to output in Low-ZtLZOE0000ns
Output Enable to output in High-ZtHZOE5678ns4, 6
Byte Enable access timetABE6789ns
Byte Enable to output in Low-ZtLZBE0000ns4, 7
Byte disable to output in High-ZtHZBE5678ns4, 6, 7
Chip Enable to power-up timetPU0000ns4
Chip disable to power-down timetPD10 1215 20 ns4
WRITE Cycle
WRITE cycle timetWC10 1215 20 ns
Chip Enable to end of writetCW8 8 9 10 ns
Address valid to end of write, with OE#
HIGHtAW8 8 9 10 ns
Address setup timetAS0000ns
Address hold from end of writetAH0000ns
WRITE pulse widthtWP2 10 1011 12 ns
WRITE pulse width, with OE# HIGHtWP1 8 8 9 10 ns
Data setup timetDS6678ns
Data hold timetDH0000ns
Write disable to output in Low-ZtLZWE3455ns4, 7
Write Enable to output in High-ZtHZWE5678ns4, 6, 7
Byte Enable to end of writetBW8 8 9 10 ns
AC TEST CONDITIONS
Input pulse levels0V to 3.0V
Input rise and fall times1.5ns
Input timing reference levels1.5V
Output reference levels1.5V
Output loadSee Figures 1 and 2
OUTPUT LOADS
Vt = 1.5V
30 pF
Q
Z0 = 50Ω
Fig. 1 OUTPUT LOAD EQUIVALENT
50Ω
Q
+5V
480Ω
255Ω
Fig. 2 OUTPUT LOAD EQUIVALENT
5 pF
January 22, 199 96Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
NOTES
1. All voltages referenced to VSS (GND).
2. Overshoot: VIH ≤ +7.0V for t ≤ tRC /2.
Undershoot: VIL ≤ -2.0V for t ≤ tRC / 2
3. Icc is given with no output current. Icc increases with greater
output loading and faster cycle times.
4. This parameter is sampled.
5. Test conditions as specified with the output loading as shown in
Fig. 1 unless otherwise noted.
6. Output loading is specified with CL=5pF as in Fig. 2. Transition
is measured +500mV from steady state voltage.
7. At any given temperature and voltage condition, tHZCE is less
than tLZCE and tHZWE is less than tLZWE.
8. WE# is HIGH for READ cycle.
9. Device is continuously selected. Chip enable and output enables
are held in their active state.
10. Address valid prior to, or coincident with, latest occurring chip
enable.
11. tRC = Read Cycle Time.
12. Chip Enable and Write Enable can initiate and terminate a
WRITE cycle.
13. Capacitance derating applies to capacitance different from the
load capacitance shown in Fig. 1.
14. Typical values are measured at 5V, 25oC and 20ns cycle time.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only )
DESCRIPTIO NCONDITION SSYMBO LMINTYPMAXUNITSNOTES
Vcc for Retention DataVDR2V
Data Retention CurrentCE# >VCC -0.2;
all other inputs < VSS +0.2
or >VCC -0.2;
all inputs static; f= 0
Vcc = 2VICCDR2400uA13
Vcc = 3VICCDR3600uA13
Chip Deselect to
Data Retention TimetCDR0 ns4
Operation Recovery TimetRtRCns4, 11
January 22, 199 97Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
LOW VCC DATA RETENTION WAVEFOR M
READ CYCLE NO. 1(8, 9)
READ CYCLE NO. 2(7, 8, 10, 12)
VCC
CE#
DATA RETENTION MODE
VDR
4.5V 4.5V
VIH
VIL
tRC
tCDR
ADDR VALID
tRC
DATA VALID
tOH
tAA
PREVIOUS DATA VALID
Q
CE#
tRC
DATA VALID
tLZCE
tACE
OE#
HIGH Z
tAOE
tLZOE
tHZCE
tHZOE
BLE#
BHE#
Q
UNDEFINED
DON'T CARE
tHZBE
tLZBE
tABE
January 22, 199 98Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
WRITE CYCLE NO. 1(7, 12, 13)
(Write Enable Controlled with Output Enable OE# active LOW))
WRITE CYCLE NO. 2(12, 13 )
(Write Enable Controlled with Output Enable OE# inactive HIGH)
ADDR
tWC
tAH
tDS
DATA VALID
CE#
WE#
D
Q
tDH
tWP2
tAS
tAW
tCW
HIGH Z
tHZWE tLZWE
BLE#
BHE#
tBW
ADDR
tWC
tAH
tDS
DATA VALID
HIGH Z
CE#
WE#
D
Q
tDH
tWP1
tAS
tAW
tCW
UNDEFINED
DON'T CARE
BLE#
BHE#
tBW
January 22, 199 99Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
WRITE CYCLE NO. 3(12, 13 )
(Chip Enable Controlled)
WRITE CYCLE NO. 4(12, 13 )
(Byte Enable Controlled)
ADDR
tWC
tAH
tDS
DON'T CARE
DATA VALID
CE#
WE#
D
Q
tDH
tWP1
tAW tCW
HIGH Z
BLE#
BHE#
tBW
tAS
ADDR
tWC
tAH
tDS
DON'T CARE
DATA VALID
CE#
WE#
D
Q
tDH
tWP1
tAW tBW
HIGH Z
BLE#
BHE# tCW
tAS
January 22, 199 910Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
Package Dimensions
Note: All dimensions in inches (millimeters)
1.129 (28.68)
1.123 (28.52)
.405 (10.29)
.395 (10.03)
PIN #1 INDEX .050 (1.27) TYP
.020 (0.51)
.015 (0.38)
MAX
MIN or typical, min where noted.
SEATING
PLANE
.380 (9.65)
.360 (9.14)
.095 (2.41)
.080 (2.03)
.148 (3.76)
.138 (3.51) .030 (0.76)
MIN
.445 (11.30)
.435 (11.05)
44-pin 400 Mil Plastic SOJ (J)
Note: All dimensions in inches (millimeters)
.741 (18.81)
.721 (18.31)
.402 (10.21)
.398 (10.11)
PIN #1 INDEX .0315 (0.80) TYP
.018 (0.45)
.010 (0.25)
MAX
MIN or typical, max where noted.
SEATING
PLANE
.008 (0.20)
.002 (0.05)
.007 (0.18)
.005 (0.12)
.467 (11.86)
.459 (11.66)
44-pin 400 Mil Plastic TSOP (TS)
.047 (1.20)
MAX
.032 (0.80) .024 (0.60)
.016 (0.40)
January 22, 199 911Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
Ordering Information
GVT 7264A16 XX - XX X X
Galvantech Prefix
Part Number
Package (J = 400 mil SOJ,
15 = 15ns, 20 = 20ns)
Speed (10 = 10ns, 12= 12ns
TS = TSOP TYPE II)
Temperature (Blank = Commercial
I = Industrial)
Power (Blank= Standard,
L= Low Power)
