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1CGD15HB62P1 Rev - , 09-2015
Dual Channel SiC MOSFET Driver
Gate Driver for 1200V, 62mm SiC MOSFET Power Module
Features
2 output channels
Integrated isolated power supply
Direct mount low inductance design
Short circuit protection
Under voltage protection
For use with Cree Modules
CAS300M12BM2, 1200V, 300A module.
CAS120M12BM2, 1200V, 120A module.
Applications
Driver for SiC MOSFET modules in industrial
applications.
DC Bus voltage up to 1000V
Absolute Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
Vs Power Supply Voltage 16 V
ViH Input signal voltage HIGH 5 V
ViL Input signal voltage LOW 0 V
IO.pk Output peak current ±9 (±2) A
Gate drive capable of 9A, but 10Ω
of gate resistance lowers peak to
2A
PO_AVG Ouput power per gate 1.8 W
FMax Max. Switching frequency 64 kHz
VDS Max. Drain to source
voltage 1200 V
Visol Input to output isolation
voltage ±1200 V
dv/dt Rate of change of output to
input voltage 50,000 V/μs
Part Number Package Marking
CGD15HB62P1 PCBA CGD15HB62P1