DMC4040SSD 40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max (A) Device V(BR)DSS RDS(ON) Max TA = +25C (Notes 6 & 8) NEW PRODUCT Q1 25m @ VGS= 10V 7.5 40m @ VGS= 4.5V 6.2 25m @ VGS= -10V -7.3 45m @ VGS= -4.5V -5.7 40V Q2 Matched N & P RDS(ON) - Minimizes Power Losses Fast Switching - Minimizes Switching Losses Dual Device - Reduces PCB Area Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) -40V Description Mechanical Data This MOSFET is designed to ensure that RDS(ON) of N and P channel FET are matched to minimize losses in both arms of the bridge. The DMC4040SSD is optimized for use in a 3-phase brushless DC motor circuit (BLDC), and CCFL backlighting. Applications Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) 3-Phase BLDC Motor CCFL Backlighting SO-8 D1 S1 D1 G1 D1 S2 D2 G2 D2 D2 G1 G2 S1 S2 Q2 P-Channel Q1 N-Channel Top View Top View Equivalent Circuit Ordering Information (Note 4) Product DMC4040SSD-13 Notes: Marking C4040SD Reel Size (inches) 13 Tape Width (mm) 12 Quantity per Reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMC4040SSD Document number: DS32120 Rev. 3 - 2 1 of 10 www.diodes.com September 2015 (c) Diodes Incorporated DMC4040SSD Marking Information NEW PRODUCT C4040SD YY WW = Manufacturer's Marking C4040SD = Product Type Marking Code YYWW = Date Code Marking YY or YY= Year (ex: 10 = 2010) WW = Week (01 - 53) Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (Notes 6 & 8) TA = +70C (Notes 6 & 8) (Notes 5 & 8) (Notes 5 & 9) (Notes 7 & 8) (Notes 6 & 8) (Notes 7 & 8) ID IDM IS ISM N-Channel - Q1 40 20 7.5 5.8 5.7 6.8 29.0 3.0 29.0 P-Channel - Q2 -40 20 -7.5 -5.8 -5.7 -6.8 -29.0 -3.0 -29.0 Unit N-Channel - Q1 P-Channel - Q2 1.25 10 1.8 14.3 2.14 17.2 100 70 58 51 -55 to +150 Unit V A Thermal Characteristics Characteristic Symbol (Notes 5 & 8) Power Dissipation Linear Derating Factor (Notes 5 & 9) PD (Notes 6 & 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 5 & 8) (Notes 5 & 9) (Notes 6 & 8) (Notes 5 & 10) RJA RJL TJ, TSTG W mW/C C/W C 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is measured at t 10 sec. 7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300s. 8. For a dual device with one active die. 9. For a device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). DMC4040SSD Document number: DS32120 Rev. 3 - 2 2 of 10 www.diodes.com September 2015 (c) Diodes Incorporated DMC4040SSD Thermal Characteristics (Continued) 1 DC -ID Drain Current (A) ID Drain Current (A) 10 Limited 1s 100ms 100m 1ms 100us 10 Limited 1 DC 1s 100ms 1 VDS Drain-Source Voltage (V) One active die D=0.5 Single Pulse D=0.2 20 D=0.05 0 100 D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (C/W) R(theta junction-to-ambient), RJA 40 1 10 P-channel Safe Operating Area 80 60 100us -VDS Drain-Source Voltage (V) N-channel Safe Operating Area 100 1ms One active die 0.1 10 10ms Single Pulse T amb= 25C 10m One active die 0.1 RDS(ON) 100m 10ms Single Pulse T amb= 25C 10m 2.0 1.5 Two active die One active die 1.0 0.5 0.0 Pulse Width (s) 0 25 50 75 100 125 150 Temperature (C) Transient Thermal Impedance Maximum Power (W) NEW PRODUCT RDS(ON) Derating Curve Single Pulse T amb= 25C 100 One active die 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation DMC4040SSD Document number: DS32120 Rev. 3 - 2 3 of 10 www.diodes.com September 2015 (c) Diodes Incorporated DMC4040SSD NEW PRODUCT Electrical Characteristics (Q1 N-Channel) (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 1.0 100 V A nA ID = 250A, VGS= 0V VDS= 40V, VGS= 0V VGS= 20V, VDS= 0V VGS(th) 0.8 RDS(ON) Forward Transconductance (Notes 11 & 12) Diode Forward Voltage (Note 11) DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13) Gfs VSD 1.8 0.025 0.040 1.0 V Static Drain-Source On-Resistance (Note 11) 1.3 0.013 0.028 12.6 0.7 ID= 250A, VDS= VGS VGS= 10V, ID= 3A VGS= 4.5V, ID= 3A VDS= 5V, ID= 3A IS= 1A, VGS= 0V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf 1,790 160 120 1.03 16.0 37.6 7.8 6.6 8.1 15.1 24.3 5.3 S V pF nC nS Test Condition VDS= 20V, VGS= 0V f= 1MHz VDS= 0V, VGS= 0V, f= 1MHz VGS= 4.5V VDS= 20V ID= 3A VGS= 10V VDD= 20V, VGS= 10V ID= 3A Electrical Characteristics (Q2 P-Channel) (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1.0 100 V A nA ID = -250A, VGS = 0V VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS(ON) Forward Transconductance (Notes 11 & 12) Diode Forward Voltage (Note 11) DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13) Gfs VSD -1.3 0.018 0.030 16.6 -0.7 -1.8 0.025 0.045 - -1.0 V Static Drain-Source On-Resistance (Note 11) -0.8 ID = -250A, VDS = VGS VGS = -10V, ID = -3A VGS = -4.5V, ID = -3A VDS = -5V, ID = -3A IS = -1A, VGS = 0V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf 1,643 179 128 6.43 14.0 33.7 5.5 7.3 6.9 14.7 53.7 30.9 Notes: S V pF nC nS Test Condition VDS = -20V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V VDS = -20V ID = -3A VGS = -10V VDD = -20V, VGS = -10V ID = -3A 11. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures. DMC4040SSD Document number: DS32120 Rev. 3 - 2 4 of 10 www.diodes.com September 2015 (c) Diodes Incorporated DMC4040SSD Typical Characteristics (Q1 N-Channel) 30 30 VGS = 8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 20 VDS = 5V 25 15 VGS = 4.0V 10 20 15 10 VGS = 3.5V TA = 150C 5 5 VGS = 2.5V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2 0.06 0.05 0.04 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 85C TA = 25C TA = -55C 0 0 T A = 125C VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 30 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 5 0.04 VGS = 10V 0.03 TA = 150C 0.02 TA = 125C TA = 85C TA = 25C 0.01 TA = -55C 0 0 1.7 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 25 VGS = 10V ID = 20A 1.5 1.3 VGS = 4.5V ID = 10A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMC4040SSD Document number: DS32120 Rev. 3 - 2 5 of 10 www.diodes.com 0.05 0.04 VGS = 4.5V ID = 10A 0.03 0.02 VGS = 10V ID = 20A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature September 2015 (c) Diodes Incorporated 20 2.7 18 2.4 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 3.0 2.1 1.8 ID = 1mA 1.5 1.2 ID = 250A 0.9 0.6 12 10 8 6 4 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 IDSS, LEAKAGE CURRENT (nA) 10,000 C, CAPACITANCE (pF) TA = 25C 14 2 0.3 Ciss 1,000 Coss Crss 100 1,000 T A = 150C TA = 125C 100 TA = 85C 10 TA = 25C f = 1MHz 10 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 40 10 VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMC4040SSD VDS = 20V ID = 12A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMC4040SSD Document number: DS32120 Rev. 3 - 2 40 6 of 10 www.diodes.com September 2015 (c) Diodes Incorporated DMC4040SSD 30 25 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 20 15 10 5 VDS = -5V T A = 85C T A = 25C 20 TA = 150C TA = 125C TA = -55C 15 10 5 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 2 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.04 VGS = -4.5V 0.03 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage 30 0 1 2 3 4 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 5 0.04 VGS = -10V 0.03 TA = 150C TA = 125C TA = 85C 0.02 TA = 25C TA = -55C 0.01 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 R DSON, DRAIN-SOURCE ON-RESISTANCE () 1.7 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT Typical Characteristics (Q2 P-Channel) VGS = -10V ID = -20A 1.5 1.3 VGS = -4.5V ID = -10A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 16 On-Resistance Variation with Temperature DMC4040SSD Document number: DS32120 Rev. 3 - 2 7 of 10 www.diodes.com 0.05 0.04 VGS = -4.5V ID = -10A 0.03 0.02 VGS = -10V ID = -20A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature September 2015 (c) Diodes Incorporated DMC4040SSD -VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 -IS, SOURCE CURRENT (A) 18 1.5 ID = -1mA 1.0 ID = -250A 0.5 16 TA = 25C 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature -IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current 10,000 10,000 Ciss 1,000 Coss Crss 100 TA = 150C 1,000 TA = 125C 100 TA = 85C 10 TA = 25C 10 1 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 30 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage 40 10 -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT 2.0 VDS = -20V ID = -12A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 22 Gate-Charge Characteristics DMC4040SSD Document number: DS32120 Rev. 3 - 2 40 8 of 10 www.diodes.com September 2015 (c) Diodes Incorporated DMC4040SSD Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 SO-8 NEW PRODUCT E1 E SO-8 Dim Min Max A -- 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h -- 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane A1 L Detail `A' 7~9 h 45 Detail `A' A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 C1 C2 Y DMC4040SSD Document number: DS32120 Rev. 3 - 2 9 of 10 www.diodes.com September 2015 (c) Diodes Incorporated DMC4040SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2015, Diodes Incorporated www.diodes.com DMC4040SSD Document number: DS32120 Rev. 3 - 2 10 of 10 www.diodes.com September 2015 (c) Diodes Incorporated