DMC4040SSD
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DMC4040SSD
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V(BR)DSS
RDS(ON) Max
Q1
40V
25mΩ @ VGS= 10V
40mΩ @ VGS= 4.5V
Q2
-40V
25mΩ @ VGS= -10V
45mΩ @ VGS= -4.5V
Description
This MOSFET is designed to ensure that RDS(ON) of N and P channel
FET are matched to minimize losses in both arms of the bridge. The
DMC4040SSD is optimized for use in a 3-phase brushless DC motor
circuit (BLDC), and CCFL backlighting.
Applications
3-Phase BLDC Motor
CCFL Backlighting
Features and Benefits
Matched N & P RDS(ON) – Minimizes Power Losses
Fast Switching – Minimizes Switching Losses
Dual Device – Reduces PCB Area
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
DMC4040SSD-13
C4040SD
13
12
2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Top View
Top View
SO-8
D1S1
G1
S2
G2
D1
D2
D2
D1
S1
G1
D2
S2
G2
Q1 N-Channel
Q2 P-Channel
Equivalent Circuit
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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DMC4040SSD
Marking Information
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
N-Channel - Q1
P-Channel - Q2
Unit
Drain-Source Voltage
VDSS
40
-40
V
Gate-Source Voltage
VGSS
20
20
Continuous Drain Current
VGS = 10V
(Notes 6 & 8)
ID
7.5
-7.5
A
TA = +70°C (Notes 6 & 8)
5.8
-5.8
(Notes 5 & 8)
5.7
-5.7
(Notes 5 & 9)
6.8
-6.8
Pulsed Drain Current
VGS = 10V
(Notes 7 & 8)
IDM
29.0
-29.0
Continuous Source Current (Body Diode)
(Notes 6 & 8)
IS
3.0
-3.0
Pulsed Source Current (Body Diode)
(Notes 7 & 8)
ISM
29.0
-29.0
Thermal Characteristics
Characteristic
Symbol
N-Channel - Q1
P-Channel - Q2
Unit
Power Dissipation
Linear Derating Factor
(Notes 5 & 8)
PD
1.25
10
W
mW/°C
(Notes 5 & 9)
1.8
14.3
(Notes 6 & 8)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 5 & 8)
RθJA
100
°C/W
(Notes 5 & 9)
70
(Notes 6 & 8)
58
Thermal Resistance, Junction to Lead
(Notes 5 & 10)
RθJL
51
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
C4040SD
YY WW
= Manufacturer’s Marking
C4040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Year (ex: 10 = 2010)
WW = Week (01 - 53)
DMC4040SSD
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DMC4040SSD
Thermal Characteristics (Continued)
0.1 1 10
10m
100m
1
10
025 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
100µ 1m 10m 100m 110 100 1k
0
20
40
60
80
100
100µ 1m 10m 100m 110 100 1k
1
10
100
0.1 1 10
10m
100m
1
10
R(theta junction-to-ambient), RJA
One active die
100us
100ms
1s
RDS(ON)
Limited
1ms
N-channel Safe Operating Area
Single Pulse
Tamb= 25°C
One active die
DC
10ms
ID Drain Current (A)
VDS Drain-Source Voltage (V)
One active die
Two active die
Derating Curve
Max Power Dissipation (W)
Temperature (°C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
Tamb= 25°C
One active die
Pulse Power Dissipation
Maximum Power (W)
Pulse Width (s)
Single Pulse
Tamb= 25°C
One active die
1s
DC
100us
1ms
10ms
100ms
RDS(ON)
Limited
P-channel Safe Operating Area
-VDS Drain-Source Voltage (V)
-ID Drain Current (A)
DMC4040SSD
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DMC4040SSD
Electrical Characteristics (Q1 N-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
40
V
ID = 250µA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS= 40V, VGS= 0V
Gate-Source Leakage
IGSS
100
nA
VGS= 20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
0.8
1.3
1.8
V
ID= 250µA, VDS= VGS
Static Drain-Source On-Resistance (Note 11)
RDS(ON)
0.013
0.025
Ω
VGS= 10V, ID= 3A
0.028
0.040
VGS= 4.5V, ID= 3A
Forward Transconductance (Notes 11 & 12)
Gfs
12.6
S
VDS= 5V, ID= 3A
Diode Forward Voltage (Note 11)
VSD
0.7
1.0
V
IS= 1A, VGS= 0V
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Ciss
1,790
pF
VDS= 20V, VGS= 0V
f= 1MHz
Output Capacitance
Coss
160
Reverse Transfer Capacitance
Crss
120
Gate Resistance
Rg

1.03

Ω
VDS= 0V, VGS= 0V, f= 1MHz
Total Gate Charge (Note 13)
Qg

16.0

nC
VGS= 4.5V
VDS= 20V
ID= 3A
Total Gate Charge (Note 13)
Qg
37.6
VGS= 10V
Gate-Source Charge (Note 13)
Qgs
7.8
Gate-Drain Charge (Note 13)
Qgd
6.6
Turn-On Delay Time (Note 13)
tD(on)
8.1
nS
VDD= 20V, VGS= 10V
ID= 3A
Turn-On Rise Time (Note 13)
tr
15.1
Turn-Off Delay Time (Note 13)
tD(off)
24.3
Turn-Off Fall Time (Note 13)
tf
5.3
Electrical Characteristics (Q2 P-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-40
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1.0
µA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-0.8
-1.3
-1.8
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 11)
RDS(ON)
0.018
0.025
Ω
VGS = -10V, ID = -3A
0.030
0.045
VGS = -4.5V, ID = -3A
Forward Transconductance (Notes 11 & 12)
Gfs
16.6
–
S
VDS = -5V, ID = -3A
Diode Forward Voltage (Note 11)
VSD
-0.7
-1.0
V
IS = -1A, VGS = 0V
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Ciss
1,643
pF
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
179
Reverse Transfer Capacitance
Crss
128
Gate Resistance
Rg

6.43

Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (Note 13)
Qg
14.0
nC
VGS = -4.5V
VDS = -20V
ID = -3A
Total Gate Charge (Note 13)
Qg
33.7
VGS = -10V
Gate-Source Charge (Note 13)
Qgs
5.5
Gate-Drain Charge (Note 13)
Qgd
7.3
Turn-On Delay Time (Note 13)
tD(on)
6.9
nS
VDD = -20V, VGS = -10V
ID = -3A
Turn-On Rise Time (Note 13)
tr
14.7
Turn-Off Delay Time (Note 13)
tD(off)
53.7
Turn-Off Fall Time (Note 13)
tf
30.9
Notes: 11. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
DMC4040SSD
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Typical Characteristics (Q1 N-Channel)
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 3.5V
GS
V = 2.5V
GS V = 3.0V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
5
10
15
20
25
30
0 1 2 3 4 5
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 10V
GS
0
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 10V
I = 20A
GS
D
V = 4.5V
I = 10A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = 10V
I = 20A
GS
D
V = 4.5V
I = 10A
GS
D
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0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I , SOURCE CURRENT (A)
S
T = 25°C
A
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
Ciss
Crss
Coss
f = 1MHz
0 5 10 15 20 25 30 35 40
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
10,000
I , LEAKAGE CURRENT (nA)
DSS
1,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V , GATE-SOURCE VOLTAGE (V)
GS
V = 20V
I = 12A
DS
D
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Typical Characteristics (Q2 P-Channel)
0 0.5 1 1.5 2
Fig. 12 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
-I , DRAIN CURRENT (A)
D
0 1 2 3 4 5
Fig. 13 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0 5 10 15 20 25 30
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
0
0.01
0.02
0.03
0.04
0.05
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -4.5V
GS
V = -10V
GS
0 5 10 15 20 25 30
-I , DRAIN CURRENT (A)
D
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.03
0.04
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -10V
GS
Fig. 16 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
Fig. 17 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.01
0.02
0.03
0.04
0.05
0.06
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
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0
0.5
1.0
1.5
2.0
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = -250µA
D
I = -1mA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 19 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
12
14
16
18
20
-I , SOURCE CURRENT (A)
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 20 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
C, CAPACITANCE (pF)
Ciss
Crss
Coss
0 5 10 15 20 25 30 35 40
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
10,000
-I , LEAKAGE CURRENT (nA)
DSS
1,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40
Fig. 22 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
-V , GATE-SOURCE VOLTAGE (V)
GS
V = -20V
I = -12A
DS
D
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SO-8
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45°7°~9°
A3
0.254
SO-8
Dim
Min
Max
A
—
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
—
0.35
L
0.62
0.82

0°
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
X
C1
C2
Y
Dimensions
Value (in mm)
X
0.60
Y
1.55
C1
5.4
C2
1.27
DMC4040SSD
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