The VRF3933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
FEATURES
• Improved Ruggedness V(BR)DSS = 250V
• 350W with 28dB Typ. Gain @ 30MHz, 100V
• Excellent Stability & Low IMD
• Common Source Conguration
• Available in Matched Pairs
• 70:1 Load VSWR Capability at Specied Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Improved Replacement for SD3933
• Thermally Enhanced Package
• RoHS Compliant
Symbol Parameter VRF3933 Unit
VDSS Drain-Source Voltage 250 V
IDContinuous Drain Current @ TC = 25°C 20 A
VGS Gate-Source Voltage ±40 V
PDTotal Device dissipation @ TC = 25°C 648 W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature Max 200
RF POWER VERTICAL MOSFET
Maximum Ratings All Ratings: TC =25°C unless otherwise specied
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 250 260 V
VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.7 4.0
IDSS Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 2.0 mA
IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 2.0 μA
gfs Forward Transconductance (VDS = 10V, ID = 10A) 8 12 mhos
VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V
Microsemi Website - http://www.microsemi.com
050-4969 Rev C 12-2013
Thermal Characteristics
Symbol Characteristic Min Typ Max Unit
RθJC Junction to Case Thermal Resistance 0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
VRF3933
VRF3933(MP)
100V, 300W, 150MHz
D
SS
G
M177
VRF3933(MP)
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
CISS Input Capacitance VGS = 0V 850
pF
Coss Output Capacitance VDS = 50V 300
Crss Reverse Transfer Capacitance f = 1MHz 30
Functional Characteristics
Symbol Parameter Min Typ Max Unit
GPS f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 350W 23 28 dB
ηDf1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 350W 60 %
ψf = 30MHz, VDD =50V, IDQ = 250mA, Pout = 350W CW
70:1 VSWR - All Phase Angles, 0.2mSec X 20% Duty Factor No Degradation in Output Power
Microsemi reserves the right to change, without notice, the specications and information contained herein.
050-4969 Rev C 12-2013
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5 6 7 8
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30 35
1
10
100
120
1 10 100 800
10
100
1,000
10,000
0 50 100 150 200 250
Ciss
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ= 125°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
C, CAPACITANCE (pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
ID, DRAIN CURRENT (A)
5V
5.5V
4.5V
3.5V
6V
17V
7V
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
250µs PULSE
TEST<0.5 % DUTY
CYCLE
TJ= -55°C
TJ= 25°C
Coss
Crss
Rds(on)
PD Max
TJ = 125°C
TC = 75°C
Typical Performance Curves
IDMax
4V
BVdss Line
10V
100 ms
10 ms
1 ms
.1 ms
050-4969 Rev C 12-2013
0
0.05
0.10
0.15
0.20
0.25
0.30
10-5 10-4 10-3 10-2 10 1.0 10
-1
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
ZθJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
44
47
50
53
56
59
18
21
24
27
30
33
18 20 22 24 26 28 30 32 34
18
21
24
27
30
33
10
25
40
55
70
85
44 47 50 53 56 59
Pout (dBrn)
PIN, (dBm)
Figure 6. POUT and Gain vs PIN
PIN, (dBm)
Figure 7. Eff and POUT vs. PIN
Po W
OutEff
Freq=30MHz Freq=30MHz
FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
ZIN - Gate shunted with 25Ω Idq = 250mA
ZOL - Conjugate of optimum load for 300 Watts output at Vdd=50V
Freq. (MHz) Zin Zout
2 21 - j 8.5 14.1 - j 0.6
13.5 4.5 - j 6.5 12.9 - j 4
27.1 2.9 - j 3.1 9.7 - j 6.6
40.7 2.5 - j 2 7.6 - j 7
65 2.4 - j 2.07 4.5 - j 6.6
0.3
D = 0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
Pout
Gain
Gain (dB)
Efciency (%)
VRF3933(MP)
0.0202 0.0507 0.1199
0.00647F 0.02043F 0.2421F 7.962F
TJ (°C)
0.0792
TC (°C)
Gain (dB)
VRF3933(MP)
050-4969 Rev C 12-2013
30 MHz Test Circuit
L1 Output
C3 C11
C12
C10
C6 C7
C8
C9
C1 1200pF ATC100B ceramic
C2, C3 0.1uF 50V 1206 SMT
C9-C11 .047uF NPO 150V 1218 SMT
C6 100 pF metal clad mica
C7 ARCO 462 mica trimmer
C8 15 pF ATC 100E ceramic
C4, C12 10uF 100V Electrolytic
L1 23 nH - 2t #18 0.2"d .2"l
L2 62 nH - 3t #12 0.31"dia
L3 2t #16 on 2x 267300081 .5" bead
55Nȍ:
5ȍ:
T1 9:1 transforner 3t #24 teflon on
5)3DUWV&R7WUDQVIRUPHUFRUH
T2 4:1 transformer 2t 3-ply #16 teflon on
RF Parts Co. T1 transformer core
30 MHz Test Circuit
Vbias
R1
R2
L2
RF
Input
C2
T1
C1
R3
L3
T2
+
100V
C4
+
VRF3933
050-4969 Rev C 12-2013
VRF3933(MP)
PIN 1 - DRAIN
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - SOURCE
PIN 5 - SOURCE
M177 (0.63 dia. SOE) Mechanical Data
All dimensions are ±.005
DIM MIN TYP MAX
A 0.225 0.230 0.235
B0.265 0.270 0.275
C0.860 0.865 0.870
D1.130 1.135 1.140
E0.545 0.550 0.555
F0.003 0.005 0.007
G0.098 0.103 0.108
H0.150 0.160 0.170
I 0.280
J1.080 1.100 1.120
K 0.625 0.630 0.635
FE
G
HI
A
B
C
D
OK
J
.125d nom .135 r
Seating Plane
1
4
23
5
Adding MP at the end of P/N species a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
Code Vth Range Code 2 Vth Range
A 2.900 - 2.975 M 3.650 - 3.725
B 2.975 - 3.050 N 3.725 - 3.800
C 3.050 - 3.125 P 3.800 - 3.875
D 3.125 - 3.200 R 3.875 - 3.950
E 3.200 - 3.275 S 3.950 - 4.025
F3.275 - 3.350 T 4.025 - 4.100
G3.350 - 3.425 W 4.100 - 4.175
H 3.425 - 3.500 X4.175 - 4.250
J 3.500 - 3.575 Y 4.250 - 4.325
K 3.575 - 3.650 Z4.325 - 4.400
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
HAZARDOUS MATERIAL WARNING: The ceramic portion of the device below the lead plane is beryllium oxide. Beryllium oxide dust is highly toxic when
inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or
domestic waste. BeO substrate weight: 0.703g. Percentage of total module weight which is BeO: 9%.
VRF3933(MP)
050-4969 Rev C 12-2013
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Microsemi reserves the right to change the conguration, functionality and performance of its products at anytime without any notice. This prod-
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Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi
products including liability or warranties relating to tness for a particular purpose, merchantability, or infringement of any patent, copyright or
other intellectual property right. Any performance specications believed to be reliable but are not veried and customer or user must conduct
and complete all performance and other testing of this product as well as any user or customers nal application. User or customer shall not rely
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