© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 7 1Publication Order Number:
MMSZ4678T1/D
MMSZ4678T1 Series
Preferred Device
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
•500 mW Rating on FR−4 or FR−5 Board
•Wide Zener Reverse Voltage Range − 1.8 V to 43 V
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•ESD Rating of Class 3 (>16 kV) per Human Body Model
•Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Power Dissipation on FR−5 Board,
(Note 1) @ TL = 75°C
Derated above 75°C
PD500
6.7 mW
mW/°C
Thermal Resistance, (Note 2)
Junction−to−Ambient RqJA 340 °C/W
Thermal Resistance, (Note 2)
Junction−to−Lead RqJL 150 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.
1
Cathode 2
Anode
See specific marking information in the device marking
column o f the Electrical Characteristics table on page 3 o f this
data sheet.
DEVICE MARKING INFORMATION
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
http://onsemi.com
SOD−123
CASE 425
STYLE 1
1
2
Device Package Shipping†
ORDERING INFORMATION
MMSZ4xxxT1 SOD−123 3000/Tape & Reel
MARKING DIAGRAM
MMSZ4xxxT3 SOD−123 10000/Tape & Ree
l
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMSZ4xxxT1G SOD−123
(Pb−Free) 3000/Tape & Reel
MMSZ4xxxT3G SOD−123
(Pb−Free) 10000/Tape & Ree
l
xx = Device Code (Refer to page 3)
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
xx M G
G
1
MMSZ4678T1 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
MMSZ4678T1 Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device* Device
Marking
Zener Voltage (Note 3) Leakage Current
VZ (Volts) @ IZT IR @ VR
Min Nom Max mAmAVolts
MMSZ4678T1, G CC 1.71 1.8 1.89 50 7.5 1
MMSZ4679T1, G CD 1.90 2.0 2.10 50 5 1
MMSZ4680T1, G CE 2.09 2.2 2.31 50 4 1
MMSZ4681T1, G CF 2.28 2.4 2.52 50 2 1
MMSZ4682T1, G CH 2.565 2.7 2.835 50 1 1
MMSZ4683T1, G CJ 2.85 3.0 3.15 50 0.8 1
MMSZ4684T1, G CK 3.13 3.3 3.47 50 7.5 1.5
MMSZ4685T1, G CM 3.42 3.6 3.78 50 7.5 2
MMSZ4686T1, G CN 3.70 3.9 4.10 50 5 2
MMSZ4687T1, G CP 4.09 4.3 4.52 50 4 2
MMSZ4688T1, G CT 4.47 4.7 4.94 50 10 3
MMSZ4689T1, G CU 4.85 5.1 5.36 50 10 3
MMSZ4690T1, G CV 5.32 5.6 5.88 50 10 4
MMSZ4691T1, G CA 5.89 6.2 6.51 50 10 5
MMSZ4692T1, G CX 6.46 6.8 7.14 50 10 5.1
MMSZ4693T1, G CY 7.13 7.5 7.88 50 10 5.7
MMSZ4694T1, G CZ 7.79 8.2 8.61 50 1 6.2
MMSZ4695T1, G DC 8.27 8.7 9.14 50 1 6.6
MMSZ4696T1, G DD 8.65 9.1 9.56 50 1 6.9
MMSZ4697T1, G DE 9.50 10 10.50 50 1 7.6
MMSZ4698T1, G DF 10.45 11 11.55 50 0.05 8.4
MMSZ4699T1, G DH 11.40 12 12.60 50 0.05 9.1
MMSZ4700T1, G DJ 12.35 13 13.65 50 0.05 9.8
MMSZ4701T1, G DK 13.30 14 14.70 50 0.05 10.6
MMSZ4702T1, G DM 14.25 15 15.75 50 0.05 11.4
MMSZ4703T1, G †DN 15.20 16 16.80 50 0.05 12.1
MMSZ4704T1, G DP 16.15 17 17.85 50 0.05 12.9
MMSZ4705T1, G DT 17.10 18 18.90 50 0.05 13.6
MMSZ4706T1, G DU 18.05 19 19.95 50 0.05 14.4
MMSZ4707T1, G DV 19.00 20 21.00 50 0.01 15.2
MMSZ4708T1, G DA 20.90 22 23.10 50 0.01 16.7
MMSZ4709T1, G DX 22.80 24 25.20 50 0.01 18.2
MMSZ4710T1, G DY 23.75 25 26.25 50 0.01 19.0
MMSZ4711T1, G †EA 25.65 27 28.35 50 0.01 20.4
MMSZ4712T1 EC 26.60 28 29.40 50 0.01 21.2
MMSZ4713T1, G ED 28.50 30 31.50 50 0.01 22.8
MMSZ4714T1, G EE 31.35 33 34.65 50 0.01 25.0
MMSZ4715T1, G EF 34.20 36 37.80 50 0.01 27.3
MMSZ4716T1, G EH 37.05 39 40.95 50 0.01 29.6
MMSZ4717T1, G EJ 40.85 43 45.15 50 0.01 32.6
3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C.
*The “G’’ suffix indicates Pb−Free package available.
† MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel
MMSZ4678T1 Series
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4
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
1211
10
98765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
1.2
1.0
0.8
0.6
0.4
0.2
01501251007550250
T, TEMPERATURE (5C)
Figure 3. Steady State Power Derating
PD versus TA
PD versus TL
Ppk, PEAK SURGE POWER (WATTS)
0.1
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 1000
1000
100
10
1
RECTANGULAR
WAVEFORM, TA = 25°C
100
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1.21.11.00.90.80.70.60.5
0.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
PD, POWER DISSIPATION (WATTS)
MMSZ4678T1 Series
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5
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25°C
IR, LEAKAGE CURRENT ( A)μ
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25 °C
−55 °C
IZ, ZENER CURRENT (mA)
Figure 9. Zener Voltage versus Zener Current
(V
Z
Up to 12 V) Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
MMSZ4678T1 Series
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6
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉÉ
ÉÉÉ
ÉÉÉ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
−−−
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
−−−
−−− −−−
0.006
−−− −−−
−−− −−−
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MMSZ4678T1/D
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