Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
GENERAL DESCRIPTION
The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
VEBO Emitter-Base voltage (IB = 0) - 9 V
ICCollector current (DC) - 8 A
ICM Collector current peak value - 16 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 80 W
VCEsat Collector-emitter saturation voltage IC = 5.0 A;IB = 1.0 A 0.35 2.0 V
tfFall time IC = 5 A; IB1 = 1 A 40 120 ns
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector to emitter voltage VBE = 0 V - 700 V
VCEO Collector to emitter voltage (open base) - 400 V
VCBO Collector to base voltage (open emitter) - 700 V
VEBO Emitter-Base voltage (IB = 0) - 9 V
ICCollector current (DC) - 8 A
ICM Collector current peak value - 16 A
IBBase current (DC) - 4 A
IBM Base current peak value - 8 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 80 W
Tstg Storage temperature -65 150 ˚C
TjJunction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - 1.56 K/W
Rth j-a Junction to ambient in free air 60 - K/W
123
tab
b
c
e
February 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES Collector cut-off current 1VBE = 0 V; VCE = VCESMmax - - 0.2 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 1.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - - 1.0 mA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 2.0 A;IB = 0.4 A - 0.15 1.0 V
VCEsat IC = 5.0 A;IB = 1.0 A - 0.35 2.0 V
VCEsat IC = 5.0 A;IB = 1.0 A - 0.51 3.0 V
(TC = 100˚C)
VBEsat Base-emitter saturation voltage IC = 2.0 A;IB = 0.4 A - 0.92 1.2 V
VBEsat IC = 5.0 A;IB = 1.0 A - 1.05 1.6 V
VBEsat IC = 5.0 A;IB = 1.0 A - 1.00 1.5 V
(TC = 100˚C)
hFE DC current gain IC = 2.0 A; VCE = 5 V 8 17 40
hFEsat IC = 5.0 A; VCE = 5 V 5 9 30
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) ICon = 5 A; IBon = -IBoff = 1 A;
RL = 75 ohms; VBB2 = 4 V;
tsTurn-off storage time 1.8 3.0 µs
tfTurn-off fall time 0.3 0.7 µs
Switching times (inductive load) ICon = 5 A; IBon = 1 A; LB = 1 µH;
-VBB = 5 V
tsTurn-off storage time 1.2 2.0 µs
tfTurn-off fall time 40 120 ns
Switching times (inductive load) ICon = 5 A; IBon = 1 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
tsTurn-off storage time 1.6 3.0 µs
tfTurn-off fall time 100 200 ns
1 Measured with half sine-wave voltage (curve tracer).
February 1999 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig
.3.
Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; t
p
= 20
µ
s;
δ
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.
4.
Switching times waveforms with resistive load.
Fig.
5.
Test circuit inductive load.
VCC
= 300 V; -V
BE
= 5 V; L
C
= 200 uH; L
B
= 1 uH
Fig.
6.
Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
10 %
90 %
90 %
ton toff
ts tf
IBon
-IBoff
ICon
tr 30ns
VCE / V min
VCEOsust
IC / mA
10
100
250
0
LB
IBon
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
RT.U.T.
0
VIM B
L
IC
IB
ICon
IBon
-IBoff
t
t
ts tf
toff
10 %
90 %
February 1999 3 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
Fig.7. Normalised power dissipation.
PD% = 100
⋅
PD/PD
25˚C
= f (T
mb
)
Fig.8. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.9. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IB); T
j
=25˚C.
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
0 20 40 60 80 100 120 140
Tmb / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
0.01 0.10 1.00 10.00
IB/A
VCEsat/V
IC=1A 2A 3A 4A
0.01 0.05 0.1 0.3 1 2 3 5 10
2
5
10
15
20
30
50
IC/A
HFE
Tj=100C
25C
-40C
VCE=1V
0.1 0.5 1 2 5 10
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
IC/A
VBESAT/V
Tj=100C
-40C
25C
0.01 0.05 0.1 0.3 1 2 3 5 10
2
5
10
15
20
30
50
IC/A
HFE
Tj=100C
25C
-40C
VCE=5V
0.2 0.4 0.6 1 2 5 6
0
0.1
0.2
0.3
0.4
0.5
0.6
IC/A
VCESAT/V
Tj=100C
-40C
25C
February 1999 4 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
Fig.13. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.14. Test circuit for reverse bias safe operating
area.
V
clamp
< 700V; V
cc
= 150V; -V
be
= 5V,3V & 1V;
L
B
= 1
µ
H; L
C
= 200
µ
H.
Fig.15. Reverse bias safe operating area (T
j
< T
jmax
)
for -V
BE
= 5V,3V & 1V.
1E-06 1E-04 1E-02 1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02 D =
tp
T
T
P
t
D
t
p
D=
0 100 200 300 400 500 600 700 800
0
1
2
3
4
5
6
7
8
9
10
11
VCEclamp/V
IC/A
-5V
-3V
-1V
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL
February 1999 5 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.16. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
February 1999 6 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999 7 Rev 1.000
