Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13007
GENERAL DESCRIPTION
The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
VEBO Emitter-Base voltage (IB = 0) - 9 V
ICCollector current (DC) - 8 A
ICM Collector current peak value - 16 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 80 W
VCEsat Collector-emitter saturation voltage IC = 5.0 A;IB = 1.0 A 0.35 2.0 V
tfFall time IC = 5 A; IB1 = 1 A 40 120 ns
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector to emitter voltage VBE = 0 V - 700 V
VCEO Collector to emitter voltage (open base) - 400 V
VCBO Collector to base voltage (open emitter) - 700 V
VEBO Emitter-Base voltage (IB = 0) - 9 V
ICCollector current (DC) - 8 A
ICM Collector current peak value - 16 A
IBBase current (DC) - 4 A
IBM Base current peak value - 8 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 80 W
Tstg Storage temperature -65 150 ˚C
TjJunction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - 1.56 K/W
Rth j-a Junction to ambient in free air 60 - K/W
123
tab
b
c
e
February 1999 1 Rev 1.000