1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM in c h e s M ax. M in . M ax. - 0 .1 5 4 - 3 .9 A D IM E N S IO N S D IM in c h e s mm M in . M ax. M in . M ax. A - 0 .11 4 - 2 .9 B - 0 .0 7 5 - 1 .9 C - 0 .0 1 7 - 0 .4 2 D 0 .6 3 0 - 1 6 .0 - mm M in . B - 0 .0 7 5 - 1 .9 C - 0 .0 2 0 - 0 .5 2 D 1 .0 8 3 - 2 7 .5 0 - N o te Electrical Characteristics Max. power dissip. at 25 Peak reverse voltage Max. aver. rectified current VRM V IO mA Ptot mW 100 75 500 100 150 500 1N4150 50 200 1N4152 40 1N4153 75 1N4154 35 Type 1N914 1N4149 1) Max. junction temperature Max. forward voltage drop Max. reverse current Max. reverse recovery time VF V at IF mA In nA at VR V trr nS 200 1.0 10 25 20 Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA 200 1.0 10 25 20 Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA 500 200 1.0 200 100 50 Max. 4.0 IF=IR=10 to 200 mA, to 0.1 IF 150 400 175 0.55 0.10 50 30 Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA 150 400 175 0.55 0.10 50 50 Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA 500 200 1.0 0.10 100 25 Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA 150 2) Tj Conditions 1N4447 1) 100 150 500 200 1.0 20 25 20 Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA 1N4449 1) 100 150 500 200 1.0 30 25 20 Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA 1N4450 40 150 400 175 0.54 0.50 50 30 Max. 4.0 IF=IR=10mA, to IR=1mA 1N4451 40 150 400 175 0.50 0.10 50 30 Max. 10 IF=IR=10mA, to IR=1mA 1N4453 30 150 400 175 0.55 0.01 50 20 - 1N4454 75 150 400 175 1.0 10 100 50 Max. 4.0 Notes: (1) These diodes are also avaiable in glass case DO-34 (2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Parameters for diodes in case DO-34: Ptot=300mW TS=-65 to +175 TJ=175 Rtha 0.4K/mW 1 IF=IR=10mA, to IR=1mA N o te