MITSUBISHI IGBT MODULES CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E G H E G E H R(4 - Mounting Holes) S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J TAB#110 t=0.5 P Q P GuP GvP GwP EuP EvP EwP U V W GuN GvN GwN EuN EvN EwN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 B 3.540.01 Millimeters Dimensions Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Inches Millimeters 107.0 K 0.15 3.75 90.00.25 L 0.67 17.0 102.0 M 1.91 48.5 80.00.25 N 0.03 0.8 C 4.02 D 3.150.01 E 0.43 11.0 P 0.32 8.1 F 0.91 23.0 Q 1.02 26.0 G 0.47 12.0 R 0.22 Dia. H 0.85 21.7 S 0.57 J 0.91 23.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150TU-12H is a 600V (VCES), 150 Ampere SixIGBT Module. 5.5 Dia. Type Current Rating Amperes VCES Volts (x 50) 14.4 CM 150 12 Sep.2000 MITSUBISHI IGBT MODULES CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Junction Temperature Symbol Ratings Units Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 150 Amperes ICM 300* Amperes IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (Tj < 150C) Pc 600 Watts Mounting Torque, M5 Main Terminal - 2.5~3.5 N*m Mounting Torque, M5 Mounting - 2.5~3.5 N*m - 680 Grams Viso 2500 Vrms Storage Temperature Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25C - 2.4 3.0 Volts IC = 150A, VGE = 15V, Tj = 125C - 2.6 - Volts Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V - 300 - nC Emitter-Collector Voltage* VEC IE = 150A, VGE = 0V - - 2.6 Min. Typ. Max. Units - - 13.2 nF - - 7.2 nF - - 2 nF Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 150A, - - 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, - - 350 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 4.2, Resistive - - 300 ns tf Load Switching Operation - - 300 ns Diode Reverse Recovery Time trr IE = 150A, diE/dt = -300A/s - - 160 C Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = -300A/s - 0.36 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module - - 0.21 C/W Thermal Resistance, Junction to Case Rth(j-c)D Per Free-Wheel Diode 1/6 Module - - 0.47 C/W Rth(c-f) Per Module, Thermal Grease Applied - 0.015 - C/W Contact Thermal Resistance Max. Units Sep.2000 MITSUBISHI IGBT MODULES CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 300 13 14 VGE= 20V 240 12 180 11 120 10 60 9 5 VCE = 10V Tj = 25C Tj = 125C 240 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 180 120 60 8 0 0 0 2 4 6 8 12 16 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 4 3 2 1 20 0 6 IC = 150A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 300A 180 240 102 101 Cies Coes 100 Cres IC = 60A 4 8 12 16 100 0.6 20 1.8 2.2 2.6 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) td(off) 103 td(on) tr VCC = 300V VGE = 15V RG = 4.2 Tj = 125C 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 Irr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -300A/sec Tj = 25C 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 trr 10-1 10-1 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf 101 100 1.4 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 102 1.0 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 300 VGE = 0V Tj = 25C 8 120 CAPACITANCE VS. VCE (TYPICAL) 102 Tj = 25C 60 COLLECTOR-CURRENT, IC, (AMPERES) 103 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 SWITCHING TIME, (ns) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 VGE = 15V Tj = 25C Tj = 125C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 150A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM150TU-12H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.21C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.47C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000