MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features * S Prefix for Automotive and Other Applications Requiring Unique * http://onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO -40 Vdc Collector -Base Voltage VCBO -40 Vdc Emitter -Base Voltage VEBO -5.0 Vdc IC -600 mAdc ICM -900 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W Collector Current - Continuous Collector Current - Peak 2 EMITTER 3 SOT-23 (TO-236) CASE 318 STYLE 6 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD RqJA PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM 2T M G G 1 2T M G = Specific Device Code* = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION Device Package Shipping MMBT4403LT1G SOT-23 3000 / Tape & Reel (Pb-Free) SMMBT4403LT1G SOT-23 3000 / Tape & Reel (Pb-Free) MMBT4403LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2012 March, 2012 - Rev. 12 1 Publication Order Number: MMBT4403LT1/D MMBT4403L, SMMBT4403L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO -40 - Vdc Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO -40 - Vdc Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) IBEV - -0.1 mAdc Collector Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) ICEX - -0.1 mAdc 30 60 100 100 20 - - - 300 - - - - -0.4 -0.75 -0.75 - -0.95 -1.3 fT 200 - MHz ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc) (IC = -500 mAdc, VCE = -2.0 Vdc) (Note 3) (Note 3) Collector -Emitter Saturation Voltage (Note 3) Base -Emitter Saturation Voltage (Note 3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE VCE(sat) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Ccb - 8.5 pF Emitter-Base Capacitance (VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb - 30 pF Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hie 1.5 15 kW Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10- 4 Small -Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hfe 60 500 - Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hoe 1.0 100 mMhos (VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) td - 15 tr - 20 (VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) ts - 225 tf - 30 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V 200 W < 2 ns +2 V +14 V 0 0 1.0 kW -16 V 200 W < 20 ns 1.0 kW CS* < 10 pF -16 V 10 to 100 ms, DUTY CYCLE = 2% 1.0 to 100 ms, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 CS* < 10 p MMBT4403L, SMMBT4403L TRANSIENT CHARACTERISTICS 25C 100C 100 10 7.0 5.0 VCC = 30 V IC/IB = 10 50 3.0 2.0 t, TIME (ns) Q, CHARGE (nC) IC/IB = 10 70 1.0 0.7 0.5 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 QT 0.3 10 QA 0.2 7.0 5.0 0.1 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 20 30 Figure 3. Charge Data 70 200 100 300 500 300 500 Figure 4. Turn-On Time 200 100 70 IC/IB = 10 VCC = 30 V IC/IB = 10 t s, STORAGE TIME (ns) 50 t r , RISE TIME (ns) 50 IC, COLLECTOR CURRENT (mA) 30 20 10 100 IC/IB = 20 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 7.0 5.0 20 10 20 30 50 70 200 100 300 500 10 20 30 50 70 200 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Rise Time Figure 6. Storage Time SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 6 4 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW 2 IC = 50 mA 100 mA 500 mA 1.0 mA 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 6 0 0.5 1.0 2.0 5.0 10 20 50 50 100 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 3 50k MMBT4403L, SMMBT4403L h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100k MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 50k 20k 10k 5k 2k 1k 500 200 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) Figure 9. Input Impedance 500 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 100 50 20 5.0 2.0 1.0 0.1 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Voltage Feedback Ratio Figure 11. Output Admittance http://onsemi.com 4 5.0 7.0 10 MMBT4403L, SMMBT4403L STATIC CHARACTERISTICS 450 VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V h FE , DC CURRENT GAIN 400 350 TJ = 150C 300 250 25C 200 150 100 -55C 50 0.001 0.0001 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 Figure 12. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.2 IC = 1.0 mA 10 mA 100 mA 500 mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 10 1 100 Ib, BASE CURRENT (mA) 0.35 0.5 IC/IB = 10 0.30 0 COEFFICIENT (mV/ C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 13. Collector Saturation Region 0.25 150C 0.20 25C 0.15 0.10 qVC for VCE(sat) 0.5 1.0 1.5 -55C qVS for VBE 2.0 0.05 0 0.0001 0.1 0.01 0.001 IC, COLLECTOR CURRENT (A) 2.5 0.1 0.2 1 Figure 14. Collector-Emitter Saturation Voltage vs. Collector Current 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 15. Temperature Coefficients http://onsemi.com 5 500 MMBT4403L, SMMBT4403L STATIC CHARACTERISTICS 1.0 IC/IB = 10 1.0 VBE(on), BASE-EMITTER TURN ON VOLTAGE (V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.1 0.9 -55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.0001 0.001 0.01 0.1 VCE = 2.0 V 0.9 -55C 0.8 0.7 25C 0.6 0.5 0.4 150C 0.3 0.2 1 0.0001 IC, COLLECTOR CURRENT (A) 1 15 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 0.1 Figure 17. Base-Emitter Turn On Voltage vs. Collector Current 40 35 30 25 20 15 0 1 2 3 4 11 9 7 5 3 6 5 13 0 5 Veb, EMITTER BASE VOLTAGE (V) 1s 10 ms 1 ms 100 ms 100 Thermal Limit 10 1 0.1 1 15 20 25 30 40 35 Figure 19. Output Capacitance vs. Collector Base Voltage fT, CURRENT-GAIN-BANDWIDTH (MHz) 1000 10 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 18. Input Capacitance vs. Emitter Base Voltage IC, COLLECTOR CURRENT (mA) 0.01 IC, COLLECTOR CURRENT (A) Figure 16. Base-Emitter Saturation Voltage vs. Collector Current 10 0.001 10 100 1000 VCE = 1.0 V TA = 25C 100 10 0.1 1 10 100 1000 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 20. Safe Operating Area Figure 21. Current-Gain-Bandwidth Product http://onsemi.com 6 MMBT4403L, SMMBT4403L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 q 0 --- 10 0 --- 10 D SEE VIEW C 3 HE E c 1 2 e b 0.25 q A L A1 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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