© Semiconductor Components Industries, LLC, 2012
March, 2012 Rev. 12
1Publication Order Number:
MMBT4403LT1/D
MMBT4403L, SMMBT4403L
Switching Transistor
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 40 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC600 mAdc
Collector Current Peak ICM 900 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT23 (TO236)
CASE 318
STYLE 6
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1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
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Device Package Shipping
ORDERING INFORMATION
MMBT4403LT1G SOT23
(PbFree)
3000 / Tape & Reel
MMBT4403LT3G SOT23
(PbFree)
10,000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2T M G
G
2T = Specific Device Code*
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
SMMBT4403LT1G SOT23
(PbFree)
3000 / Tape & Reel
MMBT4403L, SMMBT4403L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 Vdc
EmitterBase Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 5.0 Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV 0.1 mAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(Note 3) (IC = 150 mAdc, VCE = 2.0 Vdc)
(Note 3) (IC = 500 mAdc, VCE = 2.0 Vdc)
hFE 30
60
100
100
20
300
CollectorEmitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.4
0.75
Vdc
Base Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
0.95
1.3
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT200 MHz
CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb 8.5 pF
EmitterBase Capacitance (VBE = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.5 15 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 104
SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 60 500
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 mMhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td15
ns
Rise Time tr20
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts225 ns
Fall Time tf30
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Fi
g
ure 1. TurnOn Time Fi
g
ure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
-16 V 10 to 100 ms,
DUTY CYCLE = 2%
0
1.0 kW
-30 V
200 W
CS* < 10 pF 1.0 kW
-30 V
200 W
CS* < 10
p
+4.0 V
< 2 ns
1.0 to 100 ms,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
-16 V
MMBT4403L, SMMBT4403L
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3
Figure 3. Charge Data
IC, COLLECTOR CURRENT (mA)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 4. TurnOn Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 5. Rise Time
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
QT
QA
25°C 100°C
TRANSIENT CHARACTERISTICS
0.3
0.2
30
ts, STORAGE TIME (ns)
t, TIME (ns)
70
100
10 20 50 70 100 200 300 500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
VCC = 30 V
IC/IB = 10
10 20 50 70 100 200 300 500
30
100
20
70
50
200
30
tr, RISE TIME (ns)
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts = ts - 1/8 tf
6
8
10
0
4
2
0.1 2.0 5.0 10 20 50
1.00.50.20.01 0.02 0.05 100
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
SMALLSIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
IC = 100 mA, RS = 1.6 kW
RS = OPTIMUM SOURCE RESISTANCE
50 100 200 500 1k 2k 5k 10k 20k 50k
6
8
10
0
4
2
NF, NOISE FIGURE (dB)
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
MMBT4403L, SMMBT4403L
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4
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a highgain and a lowgain unit were selected from the MMBT4403LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
hie, INPUT IMPEDANCE (OHMS)
Figure 9. Input Impedance
IC, COLLECTOR CURRENT (mAdc)
100k
100
20k
10k
5k
2k
1k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
Figure 10. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.1
20
Figure 11. Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
-4
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
50k
500
200
10
100
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403L, SMMBT4403L
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5
STATIC CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
250
300
350
450
100
h , DC CURRENT GAIN
0.01 1
50
0.1
FE
0.001
0.0001
150
200
400
-55°C
TJ = 150°C
25°C
Figure 12. DC Current Gain
Ib, BASE CURRENT (mA)
Figure 13. Collector Saturation Region
0.2
0.4
0.6
0.8
1.2
0.001
0
10 100
1.0
Figure 14. CollectorEmitter Saturation
Voltage vs. Collector Current
Figure 15. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
0.5
0
0.5
1.0
1.5
2.0
qVC for VCE(sat)
qVS for VBE
COEFFICIENT (mV/ C)°
2.5 1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
0.01 0.1 1
IC = 1.0 mA 10 mA 100 mA 500 mA
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
IC, COLLECTOR CURRENT (A)
0.15
0.20
0.30
0.35
0.05
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.01 0.1
0
1
150°C
0.0001
-55°C
0.001
25°C
0.10
0.25
IC/IB = 10
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
MMBT4403L, SMMBT4403L
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6
STATIC CHARACTERISTICS
Figure 16. BaseEmitter Saturation Voltage vs.
Collector Current
Figure 17. BaseEmitter Turn On Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
1.1
10.10.010.0010.0001
0.2
0.4
0.5
0.6
0.7
0.9
1.0
VBE(sat), BASEEMITTER SATURA-
TION VOLTAGE (V)
VBE(on), BASEEMITTER TURN ON
VOLTAGE (V)
0.8
150°C
25°C
55°C
0.8
150°C
25°C
55°C
IC/IB = 10 VCE = 2.0 V
Figure 18. Input Capacitance vs. Emitter Base
Voltage
Figure 19. Output Capacitance vs. Collector
Base Voltage
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
63210
10
15
20
25
35
40
40201550
3
7
9
13
15
Cibo, INPUT CAPACITANCE (pF)
Cobo, OUTPUT CAPACITANCE (pF)
30
4 5 10 25 30 35
0.3
11
5
Figure 20. Safe Operating Area Figure 21. CurrentGainBandwidth Product
VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
100100.1
1
10
1000
100.1
10
1000
IC, COLLECTOR CURRENT (mA)
fT
, CURRENTGAINBANDWIDTH (MHz)
100
100
1 100 1000
10 ms
1 s VCE = 1.0 V
TA = 25°C
1 ms 100 ms
Thermal Limit
1
MMBT4403L, SMMBT4403L
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7
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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