AE G CORP L7E D M@@ 0029426 OOOF769 3 a . @ : BY 268 - BY 269 Ww TELEFUNKEN electronic Creatrve Technologies Silicon Mesa Diodes T-03-l] Applications: High voitage rectifier Features: @ Glass passivated junction @ Hermetically sealed package Dimensions in mm 8<3.6 sicae Cathode 2 <082 if 1 it . . Sintered glass case SOD 57 Lae 228 | < 4.2 >26 Weight max. 0.5 g Marking: By letters Absolute maximum ratings BY 268 BY 269 Peak reverse voltage Vasa 1600 1800 Vv Reverse voltage Vp 1400 1600 Vv Peak surge forward current ty =10 ms fesna 20 A Average rectifier output current leay 0.8 A Junction temperature 7, 175 bs 67 Storage temperature range T tg -65....4175 C Maximum thermal resistance Junction ambient on PC board with spacing 25 mm Pega 110 K/W Characteristics Min. Typ. Max. T= 25 C, unless otherwise specified Forward voltage F=O04A V. 1.25 Vv Reverse current V,=1400V BY 268 I 1 2 pA V,=1600V BY 269 In 1 2 pA 7,=100C,V,=1400V BY 268 Ih 15 pA V,=1600V BY 269 I 15 pA Reverse recovery time =0.5A,/,=1.0A i, =250 mA t. 400 ns T.1,2/347.0588 E 59AE G CORP APE D MM OOed4eb OOOI770 T j BY 268: BY 269 T-03/1 al Vee | = constant t+ -+- 60 oi 60 Va VARM Scattering Bmit Epoxy glass hard tissue, board thickness: 1.5 mm RihgaStl0 K/W Fig.2 . eo 3497 @ 983498 .| F=25C 7 175C.AEG CORP L7E D MM 0029426 0009771 1 me BY 268 - BY 269 T-O3-/) 61