MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
650VCoolMOS™C7PowerTransistor
IPW65R045C7
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
2
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
TO-247
Drain
Pin 2, tab
Gate
Pin 1
Source
Pin 3
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 700 V
RDS(on),max 45 mΩ
Qg.typ 93 nC
ID,pulse 212 A
Eoss@400V 11.7 µJ
Body diode di/dt 60 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPW65R045C7 PG-TO 247 65C7045 see Appendix A
3
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current 1) ID-
-
-
-
46
29 ATC=25°C
TC=100°C
Pulsed drain current 2) ID,pulse - - 212 A TC=25°C
Avalanche energy, single pulse EAS - - 249 mJ ID=12A; VDD=50V
Avalanche energy, repetitive EAR - - 1.25 mJ ID=12A; VDD=50V
Avalanche current, single pulse IAS - - 12.0 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 227 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj-55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS- - 46 A TC=25°C
Diode pulse current2) IS,pulse - - 212 A TC=25°C
Reverse diode dv/dt 3) dv/dt - - 1.5 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed dif/dt - - 60 A/µsVDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj max.
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
5
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.55 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
for SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for
10s
6
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=1.25mA
Zero gate voltage drain current IDSS -
-
-
20
2
-µAVDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.040
0.096
0.045
-ΩVGS=10V,ID=24.9A,Tj=25°C
VGS=10V,ID=24.9A,Tj=150°C
Gate resistance RG- 0.85 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 4340 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 70 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related 1) Co(er) - 146 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time related
2)
Co(tr) - 1630 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 20 - ns VDD=400V,VGS=13V,ID=24.9A,
RG=3.3Ω
Rise time tr- 14 - ns VDD=400V,VGS=13V,ID=24.9A,
RG=3.3Ω
Turn-off delay time td(off) - 82 - ns VDD=400V,VGS=13V,ID=24.9A,
RG=3.3Ω
Fall time tf- 7 - ns VDD=400V,VGS=13V,ID=24.9A,
RG=3.3Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 23 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate to drain charge Qgd - 30 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate charge total Qg- 93 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=24.9A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
7
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=24.9A,Tj=25°C
Reverse recovery time trr - 725 - ns VR=400V,IF=46A,diF/dt=60A/µs
Reverse recovery charge Qrr - 13 - µC VR=400V,IF=46A,diF/dt=60A/µs
Peak reverse recovery current Irrm - 36 - A VR=400V,IF=46A,diF/dt=60A/µs
8
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
5Electricalcharacteristicsdiagrams
Table8
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
50
100
150
200
250
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Table9
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
103
1 µs10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
9
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
Table10
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
50
100
150
200
250
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
20
40
60
80
100
120
140
160
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Table11
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 20 40 60 80 100 120 140
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
20 V
5.5 V 6 V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
typ
98%
RDS(on)=f(Tj);ID=24.9A;VGS=10V
10
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
Table12
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
50
100
150
200
250
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 20 40 60 80 100 120
0
2
4
6
8
10
12
400 V
120 V
VGS=f(Qgate);ID=24.9Apulsed;parameter:VDD
Table13
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5
10-1
100
101
102
125 °C
25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
25
50
75
100
125
150
175
200
225
250
EAS=f(Tj);ID=12A;VDD=50V
11
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
Table14
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
580
600
620
640
660
680
700
720
740
760
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Table15
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0
2
4
6
8
10
12
14
16
Eoss=f(VDS)
12
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
6TestCircuits
Table16Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table17Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table18Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
VD
V(BR)DS
ID
VDS
VDS
ID
13
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
7PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
14
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
8AppendixA
Table19RelatedLinks
•IFXCoolMOSTMC7Webpage:www.infineon.com
•IFXCoolMOSTMC7applicationnote:www.infineon.com
•IFXCoolMOSTMC7simulationmodel:www.infineon.com
•IFXDesigntools:www.infineon.com
15
650VCoolMOS™C7PowerTransistor
IPW65R045C7
Rev.2.1,2013-04-30Final Data Sheet
RevisionHistory
IPW65R045C7
Revision:2013-04-30,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2013-04-18 Release of final version
2.1 2013-04-30 Body diode di/dt update
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Edition2011-08-01
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2011InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
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