(2 k )(6 5 0) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A -10max A -60min V hFE VCE=-4V, IC=-3A 2000min IB -1 A VCE(sat) IC=-3A, IB=-6mA -1.5max PC 25(Tc=25C) W VBE(sat) IC=-3A, IB=-6mA -2max V Tj 150 C fT VCE=-12V, IE=0.2A 150typ MHz -55 to +150 C COB VCB=-10V, f=1MHz 75typ pF Tstg 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -30 10 -3 -10 5 -10 10 0.4typ 0.8typ 0.6typ -2 -1 0 -1 -2 -3 -4 -5 -3A -1 -2A -0.5 Collector-Emitter Voltage V C E (V) -1 -1 -5 -10 h FE - I C Temperature Characteristics (Typical) 8000 1000 500 100 1000 12 5C 25 500 C -3 0C 100 50 50 -0.1 -0.5 -1 20 -0.02 -5 -6 -0.05 -0.1 Collector Current I C (A) -0.5 -1 -5 -6 0.7 2 at si nk 4 0x he 1 Emitter Current I E (A) 1 00x 1 0 10 ite -0.1 -0.07 -3 150x150x2 fin Without Heatsink Natural Cooling 40 In -0.5 20 ith -1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Co lle ctor Cu rre nt I C ( A) s 80 s 120 m 160 DC 1000 P c - T a Derating 1m 10 Typ 100 25 -5 0.5 10 Time t(ms) -10 0.1 1 Safe Operating Area (Single Pulse) 200 38 1 (V C E =-12V) 240 -2 -2.2 5 Collector Current I C (A) f T - I E Characteristics (Typical) 0 0.05 -1 j-a - t Characteristics Transient Thermal Resistance 5000 DC Cur r ent Gai n h F E DC Cur r ent Gai n h F E (V C E =-2V) Typ 20 -0.02 0 Base-Emittor Voltage V B E (V) (V C E =-2V) Cut- off F req uency f T (M H Z ) 0 -50 Base Current I B (mA) h FE - I C Characteristics (Typical) 8000 5000 -2 I C =-1A -0.6 -0.2 -6 -3 mp) -2 j - a ( C/W) 0 (V C E =-2V) e Te -0.8mA -3 E (Cas =- -1.0mA Weight : Approx 2.0g a. Type No. b. Lot No. -4 -3 Maxim um Power Dissipation P C (W) Collector Current I C (A) -1.2 mA -4 C 3.35 I C - V BE Temperature Characteristics (Typical) Collector Current I C (A) -1 .5 m A IB -5 0.65 +0.2 -0.1 1.5 125C Collector-Emitter Saturation Voltage V C E (s at) (V ) A mA 2. 3m - 1 .8 4.4 B V CE ( sat ) - I B Characteristics (Typical) +0.2 -0.1 5.450.1 1.5 RL () 0.8 2.15 1.05 VCC (V) -6 1.75 5.450.1 Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) o3.30.2 a b ) -4(Pulse-6) IC VEB=-6V IC=-10mA 3.45 0.2 ) V(BR)CEO 5.50.2 Temp IEBO V 15.60.2 Temp V -6 A (Case -60 VEBO -10max (Case VCEO VCB=-60V -30C ICBO Unit 0.80.2 V 2SB1257 5.5 -60 External Dimensions FM20(TO220F) (Ta=25C) Conditions 1.6 VCBO Symbol 25C Unit 9.50.2 2SB1257 23.00.3 Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose Electrical Characteristics Absolute maximum ratings (Ta=25C) B Equivalent circuit 16.2 Darlington 50x50x2 Without Heatsink 2 -5 -10 Collector-Emitter Voltage V C E (V) -70 0 0 25 50 75 100 125 Ambient Temperature Ta(C) 150