38
Darlington 2SB1257
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0±0.3
16.2
9.5±0.2
5.5
15.6±0.2 5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1257
–60
–60
–6
–4(Pulse–6)
–1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1257
–10max
–10max
–60min
2000min
–1.5max
–2max
150typ
75typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=–60V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–3A
IC=–3A, IB=–6mA
IC=–3A, IB=–6mA
VCE=–12V, IE=0.2A
VCB=–10V, f=1MHz
(Ta=25°C) (Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
–30
RL
(Ω)
10
IC
(A)
–3
VBB2
(V)
5
IB2
(mA)
10
ton
(
µ
s)
0.4typ
tstg
(
µ
s)
0.8typ
tf
(
µ
s)
0.6typ
IB1
(mA)
–10
VBB1
(V)
–10
External Dimensions FM20(TO220F)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)
Application : Driver for Solenoid, Relay and Motor and General Purpose
Weight : Approx 2.0g
a. Type No.
b. Lot No.
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
0
–2
–1
–4
–3
–6
–5
–2 –6–4–1 –5–3
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
I
B
=–2.3mA
–1.8mA
–1.5mA
–1.2mA
–0.8mA
–1.0mA
–0.02 –0.1 –1–0.5 –6–5
Collector Current IC(A)
DC Current Gain hFE
(VCE=–2V)
100
500
20
50
1000
8000
5000
Typ
0.7
5
1
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
0.05 0.1 0.5 1 4
120
80
0
40
200
240
160
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
–10–5–3 –70
–0.07
–1
–0.5
–0.1
–10
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
10ms
1ms
Without Heatsink
Natural Cooling
–0.6
–3
–2
–1
–0.2
–1–0.5 –10–5 –50
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
–2A
–3A
IC=–1A
0
–4
–2
–3
–1
0 –2.2–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–2V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–2V)
–0.02 –0.1–0.05 –0.5 –6–5–1
20
100
50
5000
500
1000
8000
Collector Current IC(A)
DC Current Gain hFE
25˚C
–30˚C
125˚C
25
20
10
2
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
150x150x2
50x50x2
100x
100x2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
B
C
E
(2kΩ)(650Ω)
Equivalent circuit
