BA682, BA683
www.vishay.com Vishay Semiconductors
Rev. 1.6, 04-Mar-13 1Document Number: 85530
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Band Switching Diodes
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon planar diodes
• Low dynamic forward resistance
• Low diode capacitance
• High reverse impedance
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Band switching in VHF-tuners
Note
(1) Tamb = 25 °C, unless otherwise specified
Note
(1) Tamb = 25 °C, unless otherwise specified
Note
(1) Tamb = 25 °C, unless otherwise specified
94 9371
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE REMARKS
BA682 VR = 35 V, rf at IF 3 mA = max. 0.7 BA682-GS18 or BA682-GS08 Tape and reel
BA683 VR = 35 V, rf at IF 3 mA = max. 1.2 BA683-GS18 or BA683-GS08 Tape and reel
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Reverse voltage VR35 V
Forward continuous current IF100 mA
THERMAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction to ambient air On PC board
50 mm x 50 mm x 1.6 mm RthJA 500 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA VF1000 mV
Reverse current VR = 20 V IR50 nA
Diode capacitance
f = 100 MHz, VR = 1 V CD1 1.5 pF
f = 100 MHz, VR = 3 V BA682 CD2 1.25 pF
BA683 CD2 1.2 pF
Dynamic forward resistance
f = 200 MHz, IF = 3 mA BA682 rf1 0.7
BA683 rf1 1.2
f = 200 MHz, IF = 10 mA BA682 rf2 0.5
BA683 rf2 0.9
BA682, BA683
www.vishay.com Vishay Semiconductors
Rev. 1.6, 04-Mar-13 2Document Number: 85530
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
Fig. 1 - Dynamic Forward Resistance vs. Forward Current Fig. 1 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
0.1 1 10
0.1
1
10
100
100
94 9074
rf - Differential Forward Resistance (Ω)
IF - Forward Current (mA)
BA683
BA682
f = 200 MHz
Tj = 25 °C
0.1
0
0.5
1.0
1.5
2.0
3.0
CD - Diode Capacitance (pF)
10010
94 9075
2.5
VR - Reverse Voltage (V)
1
BA682
BA683
f = 200 MHz
T
j
= 25 °C
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max. 1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
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www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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