NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA) * Hohe Linearitat * 5 mm-Plastikbauform * Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) * High linearity * 5 mm plastic package Anwendungen Applications * Computer-Blitzlichtgerate * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * "Messen/Steuern/Regeln * * * * Typ Type Bestellnummer Ordering Code SFH 314 Q62702P1668 SFH 314-2/3 Q62702P3600 SFH 314 FA Q62702P1675 SFH 314 FA-2/3 Q62702P3599 2007-04-03 1 Computer-controlled flashes Photointerrupters Industrial electronics For control and drive circuits SFH 314, SFH 314 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Kollektor-Emitterspannung Collector-emitter voltage VCE 70 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 200 mW Warmewiderstand Thermal resistance RthJA 375 K/W 2007-04-03 2 SFH 314, SFH 314 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value SFH 314 SFH 314 FA Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 870 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 460 ... 1080 740 ... 1080 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.55 0.55 mm2 Abmessungen der Chipflache Dimensions of chip area LxB LxW 1x1 1x1 mm x mm Halbwinkel Half angle 40 40 Grad deg. Kapazitat, VCE = 5 V, f = 1 MHz, E = 0 Capacitance CCE 10 10 pF Dunkelstrom Dark current VCE = 10 V, E = 0 ICEO 3 ( 200) 3 ( 200) nA 2007-04-03 3 SFH 314, SFH 314 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value -1 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 314: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V 1.6 ... 3.2 2.5 mA IPCE 3.4 5.4 8.6 13.5 mA 8 10 12 14 s 150 150 150 150 mV VCEsat IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f () 30 20 10 0 OHF02329 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 2007-04-03 0.6 0.4 0 -4 0.63 ... 1.25 1 ... 2 1) 40 -3 IPCE Anstiegszeit/Abfallzeit tr , t f Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 -2 Einheit Unit 20 40 60 80 100 4 120 SFH 314, SFH 314 FA TA = 25 C, = 950 nm Relative Spectral Sensitivity, SFH 314 Srel = f () Relative Spectral Sensitivity, SFH 314 FA Srel = f () OHF02332 100 OHF02331 100 S rel % S rel % 80 80 Dark Current ICEO = f (VCE), E = 0 OHF02341 10 2 nA CEO 10 1 70 60 60 10 0 50 40 40 30 10 -1 20 20 10 0 Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 C PCE 0 400 400 500 600 700 800 900 nm 1100 800 1000 nm 1200 Photocurrent IPCE = f (Ee), VCE = 5 V OHF02339 10 1 mA C CE 1.4 20 30 40 50 V 70 V CE OHF02344 20 pF 10 0 15 10 -1 10 10 -2 5 1.2 10 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz PCE PCE 25 0 OHF01524 1.6 10 -2 600 1.0 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 C 100 TA Photocurrent IPCE = f (VCE), Ee = parameter 10 -3 -3 10 mW 1 2 cm PCE Ptot mW 0.5 cm 2 0.25 mW cm 2 mW/cm 2 Ee OHF02340 250 mW 0 -2 10 10 0 Total Power Dissipation Ptot = f (TA) OHF02338 10 1 mA 10 -2 10 -1 10 0 10 1 V 10 2 VCE Dark Current ICEO = f (TA), VCE = 10 V, E = 0 OHF02342 10 3 nA CEO 200 10 2 150 10 0 10 1 mW 0.1 cm 2 100 10 0 50 10 -1 0 10 2007-04-03 20 30 40 50 V 70 VCE 0 0 20 40 60 5 80 C 100 TA 10 -1 0 20 40 60 80 C 100 TA SFH 314, SFH 314 FA Mazeichnung Package Outlines 6.1 (0.240) 5.7 (0.224) 5.5 (0.217) 1.8 (0.071) 4.0 (0.157) 1.2 (0.047) 29.5 (1.161) 27.5 (1.083) 3.4 (0.134) Cathode (Diode) Collector (Transistor) 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) Chip position GEXY6630 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-03 o4.8 (0.189) 2.54 (0.100) spacing 0.8 (0.031) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) 6.9 (0.272) o5.1 (0.201) Area not flat 6 SFH 314, SFH 314 FA Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 7