126
GaAs Infrared Emitting Diodes
TO-4 6 F l at Win dow Pa ckage — 940 nm VTE1013H
PA CKAGE DIMENSIONS inch (mm)
CASE 24A TO -46 HERMETIC (Flat Window)
CHIP SIZE: .018" X .018"
DESCRIPTION
Thi s wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher
current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -55°C to 125°C
Continuous Power Dissipation: 200 m W
Derate above 30°C: 2.11 mW/°C
Maximum Continuou s Current: 100 mA
Derate above 30°C: 1.05 mA/°C
P eak Forw ard Current, 10 µs, 100 pps: 3.0 A
Tem p . Coefficient of P ower Output (Typ .): -.8%/°C
Maximum Reverse Volt age: 5.0V
Maximum Re verse Current @ V
R
= 5V: 10 µA
Peak Wavelength (Typic al): 940 nm
Junction Capacitance @ 0V, 1 MHz (Ty p.) : 35 pF
Response Time @ I
F
= 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124)
Refer to General Product Notes, page 2.
P art Number
Output Forward Drop Half Power Beam
Angle
Irradiance Radiant
Intensity Total Power Test
Current VF
EeCondition IePOIFT @ IFT θ1/2
mW/cm2distance Diameter mW/sr mW mA
(Pulsed) Volts Typ.
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1013 2.1 2.7 36 6.4 27 30 1.0 1.9 2.5 ±35°
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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