6427525 N & C ELECTRONICS INC aan tAa7Nn rt 3-// 16 DE eyerses 0048970 2 NG ELECTRON DEVICE MOS FIELD EFFECT TRANSIS7C? FAST SWITCHING N-CHANNEL SILICON POWER MOS FET PACKAGE DIMENSIONS ~ Features (Unit: mm) Suitable for switching power + suppli ies, - actuator controls and pulse circuits S 106 he wax 4V Gate Drive Logic level 3 tise 262020 Large Current Switching : ID(DC)=274 es apts Low RDS(on) = ine $ =" No second breakdown 123], 8 7 EE siz z Ab Mavi R ing T 2957 Las02et 73 /* ossozt solute Naxinun atings(Ta=25 0) Wi: is Drain to Source Voltage VDSS 80Y ores eer aba 02 Gate to Source Voltage VOSS = 2CY ase 286 Continuous Drain- Current. 1DDC) = + Q7A 1, Gate Pulse Drain Current [OCpulse)e= 108A 3. Source Total Power Dissipation PT 1.5 Total Power Dissipation PTS% GOW Channel Temperature Tch 150 C , Storage Temperature " Tstg -55tot150 C . A 4% Tehs150 Duty Cycles $2 % #% Te#25 C LL ep ew Electrical Characteristics (Ta=25 C) | Characteristics Symbol Min. | Typ. | Max. | Unit Test Conditions Drain Leakage Current 10SS 10!) wA | VOS= 80V,VCS=9 Gate to Source Leakage Current 1GSS 100) nA {| VGS= 20V,DS=0 Gate to Source Cutoff Voltage VGSCoff>} 1.0 2.5 V | VOS=10V,10=1.0mA Forward Transfer Admittance lyfs| 6.0] 12 S | VOS=10V,10= 15A Drain to Source On-State RDSCon) 0.07 | 0.085 | VGS=10V,10= 15A Resistance Drain to Source On-State RDS(on) O.1/ 0.15! & | VGS=4.0VIp= 154 ! Resistance Input Capacitance Ciss 1200 | pF | VO0S= 10V, | Output Capacitance Coss 520 pF | VGS=90, | Reverse Transfer Capacitance Crss 130 pF | f=L.OMH2 | Turn-0n Delay Time td{on) 10 ns | [0= 154, ; Rise Time tr 10 ns | VGSCon}= 10%, | Turn-Off Delay Tine tcCoft) 70 ns | Vec= 20, j Fall Tine tf 100 | ms i RL= 2.0 9 they are ce [oom baronet eee ty Eirews shown or represent iat NEC Cerpe: ration16 De Meya7s25 oowes71 y I PEC secmos sevice 6427525 N E ELECTRONICS INC 98D 18971 D T-39-1] TURN-ON AND TURN-OFF TIME TEST CIRCUIT YG R Gate s oper ED 9g Voltage 10 4% Yesion) Wave 0 <= ferm . = Yee Ip $C 9% 30 3 od tp Orai oe ee Current 3 10 7s 10% Wave Vin form tacon) te teoffy~ ty = . ton tett v=l us Outy Cycles % RATING FACTOR OF FORSAR . Sea CR NG AREAY re BIAS _ FORWARD BIAS SAFE OPERATING AREA 100 = b(pulse g a ? } Sa x = 1 & | \ 5 pS ion = ee = E , 8 s at = I | E 5 2 * | tras { le Puls 8 3 46 Os 0 00 J20. 446 160 OF 16 Icco TC-Case Tesperature-C YDS-Drain to Source Voltage- TOTAL POER DISSIPATION vs. DRAIN CURRENT vs. DRAIN 10 CASE TEMPERATURE SOURCE YOLTAGE 60 S | . \ t 50 s - \ . N < & 40 & 3 \ So 30 5 Lu [=] g \ E e 20 XV 3 aN - . & . 0 20 60 GO 0 150 180 oF 2 4 6 & Te-Case - Tetperature-T , vDS-Drain to Source Yoltage- mee6427525 N & C ELECTRONICS INC 88D 18972 D T-39-11 PVE pecrpon vevice 96 DEM b42e7525 oo1adre b oo FORWARD TRANS?ES ACMITTANCE SOURCE To DRAIN DIODE ys. DRAIN CURRENT . FCRYARD YOLTAGE Tose lav VGS*4V 4Anv tyfst -Forvard Transfer Adulttance-S 1SN-Reverse Pratn Current-A Oy 7 is 1D-Drain Current-A YS0-Souree to Drain Yo! tage- CAPACITANCE vs. DRAIN TO DRAIN TO SOURCE ON-STATE RESISTANCE SOURCE YOLTAGE vs. GATE TO SOURCE VOLTAGE vos" JIp=15A fe|MHz , 02 | 0. < C-Capaci tance ~ pF RDS(on)-Drain to Sourco On-State Reststance- 0 4s ne | . 10 100 10D . 5 10 15 VOS-Drain to Source Yoltage-Y VGS-Gate to Source Yoltage- DRAIN 10 SGURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE ys. CHANNEL TEMPERATURE vs, DRAIN CURRENT 02 - Tor lsa oO awd - we LL ov a | i 2 | RNS(on)-Dratn to Source On-State Resistance- 0 RNS(on)-Dratn to Source On-State Resistance- 0 | 1 rT = 0 50 100 \S6 Tch-Channe! Tesperatyure-C 1D-Drain Currens-A48 Deeuazses oowss7a a FD ie NEC escrow sence 6427525 N E C ELECTRONICS INC 98D 18973 D T-39-11 GATE TO SOURCE CUTOFF VOLTAGE TRANSFER CHARACTERISTICS vs. CHANNEL TEMPERATURE Vos=ioy ; | torte 8 5 2 a = 37 ph ef = = as as { pS = - 7 5 ss -~ e Bs S. mo oF 50 100 150 2 4 6 8 0 12 VCS-Gate to Source Vol tage-V Teh-Channel Tezperature-C _SWITCHING CHARACTERISTICS GATE CHARGE VS GATE-SOURCE YOLTACE vA z t es = # i & 15 7 2 tetetn = : s 1) $ # 10 : o 5 f 3 a 4 sy / Vooszegv 0 lorgaa 0 id 10 +0 270. ~~. 20 IpOrain Current A GATE CHARGE (nC) a KORHARIZED TRANSIENT THCEKAL THPEDANCE vs. PULSE WIDTH 3 10 p= _ & . - ot ~ -~ > _ ~ | 1 & -_@ t = t = t : ES 0.1 z= z= == 0.01 == 10 16 107 107 10 To = . =< PULSE 4IDTH PW (CS)