934007670116 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of November 1995

File under Discrete Semiconductors, SC05

1997 Oct 02

DISCRETE SEMICONDUCTORS

BFQ161

NPN video transistor

1997 Oct 02 2

Philips Semiconductors Product speciﬁcation

NPN video transistor BFQ161

FEATURES

•Low output capacitance

•High gain bandwidth

•High current applicability

•Good thermal stability

•Gold metallization ensures

excellent reliability.

APPLICATIONS

•Pre-stage driver in high resolution

colour graphics monitors.

DESCRIPTION

NPN video transistor in a SOT54

(TO-92) plastic package.

PINNING

PIN DESCRIPTION

1 base

2 collector

3 emitter

Fig.1 Simplified outline

(SOT54; TO-92).

age

MSB033

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCER collector-emitter voltage RBE = 100 Ω−19 V

ICcollector current (DC) −500 mA

Ptot total power dissipation Ts≤75 °C; note 1 −1W

FE DC current gain IC= 300 mA; VCE =5V 25 −

Ttransition frequency IC= 300 mA; VCE =5V; T

amb =25°C1−GHz

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −10 V

VCER collector-emitter voltage RBE = 100 Ω−19 V

VEBO emitter-base voltage open collector −3V

Ccollector current (DC) −500 mA

Ptot total power dissipation Ts≤75 °C; notes 1 and 2; see Fig.3 −1W

stg storage temperature range −65 +150 °C

Tjjunction temperature −150 °C

1997 Oct 02 3

Philips Semiconductors Product speciﬁcation

NPN video transistor BFQ161

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point note 1 75 K/W

Rth j-a thermal resistance from junction to ambient 175 K/W

Rth s-a thermal resistance from soldering point to ambient 100 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC= 5 mA; IE=0 20 −−V

(BR)CEO collector-emitter breakdown voltage IC= 10 mA; IB=0 10 −−V

(BR)EBO emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V

CES collector-emitter cut-off current IB= 0; VCE =10V −−100 µA

hFE DC current gain IC= 300 mA; VCE =5V;

amb =25°C; see Fig.4 25 −−

= 100 mA; VCE =5V;

amb =25°C; see Fig.4 40 50 −

Ccb collector-base capacitance IC= 0; VCB = 5 V; f = 1 MHz;

see Fig.5 −4.3 −pF

Cccollector capacitance IE=i

e= 0; VCB =5V; f=1MHz −6−pF

fTtransition frequency IC= 300 mA; VCE = 5 V; see Fig.6 1 −−GHz

1997 Oct 02 4

Philips Semiconductors Product speciﬁcation

NPN video transistor BFQ161

Fig.2 DC SOAR.

handbook, halfpage

04812

600

500

300

200

400

MEA204

(mA)

VCEO (V)

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

0.8

0.6

0.2

0.4

MEA206 - 1

150 Ts (oC)

Ptot

(W)

1.0

1.2

Fig.4 DC current gain as a function of

collector current; typical values.

VCE = 5 V; Tamb =25°C.

handbook, halfpage

0 400 600

MEA207

200

hFE

IC (mA)

Fig.5 Collector-base capacitance as a function of

collector-base voltage; typical values.

f = 1 MHz; Tamb =25°C.

handbook, halfpage

0 5 10 20

7.5

6.5

4.5

3.5

5.5

MEA205

Ccb

(pF)

VCB (V)

1997 Oct 02 5

Philips Semiconductors Product speciﬁcation

NPN video transistor BFQ161

Fig.6 Transition frequency as a function of

collector current; typical values.

VCE = 5 V; Tamb =25°C.

handbook, halfpage

0 100 200 300

MEA203

IC (mA)

(GHz)

1997 Oct 02 6

Philips Semiconductors Product speciﬁcation

NPN video transistor BFQ161

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 5.2

5.0

0.48

0.40

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

2.5

0.66

0.56

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43 97-02-28

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

1997 Oct 02 7

Philips Semiconductors Product speciﬁcation

NPN video transistor BFQ161

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

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Printed in The Netherlands 127027/00/03/pp8 Date of release: 1997 Oct 02 Document order number: 9397 750 02869