UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R204-008,A
NPN EPITAXIAL PLANAR
TRANSISTOR
FEATURES
* Low frequency high voltage amplifier
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL MIN MAX UNIT
Collector-Base Voltage BVCBO 160 V
Collector-Emitter Voltage BVCEO 160 V
Emitter-Base Voltage BVEBO 5 V
Collector Current Ic 100 mA
Total Power Dissipation (Ta=25°C) Ptot 1.25 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -50 150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Voltage BVCBO I
C=10µA 160 V
Collector-Emitter Voltage BVCEO I
C=1mA 160 V
Emitter-Base Voltage BVEBO I
E=10µA 5 V
Collector Cut-off Current ICBO V
CB=140V 10 µA
DC Current Gain hFE1
hFE2
VCE=5V, Ic=10mA
VCE=5V, Ic=1mA
60
30
320
Collector-Emitter Saturation Voltage VCE(sat) Ic=30mA, IB=3mA 2 V
Base-Emitter On Voltage VBE(on) V
CE=5V, Ic=10mA 1.5 V
Current Gain Bandwidth Product fT V
CE=5V,Ic=10mA 145 MHz
Output Capacitance Cob VCB=10V, f=1MHz 3.8 pF
CLASSIFICATION OF hFE1
RANK B C D
RANGE 60-120 100-200 160-320
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R204-008,A
CHARACTERISTICS CURVE
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R204-008,A
0.1 1 10 100 1000
1000
10
Collector Current (mA)
Current Gain & Collector Current
hFE
1
10
Reverse Biased Voltage(V)
Capacitance& Reverse-Biased Voltage
Capacitance (pF)
10
100
1000
100110 1000
Collector Current(mA)
Saturation Voltage &Collector Current
Saturation Voltage(mV)
VCE =5V 100 VCE(sat) @Ic=10IB
0.1 1 10 100 1000
10000
100
Collector Current (mA)
On Voltage & Collector Current
On Voltage (mV)
10
1000
1000
100110 1000
Collector Current(mA)
Cutoff Frequency &Collector Current
Cutoff Frequency (MHz)
100
VBE(on) @VcE=5V
VCE =5V
1 10 100 1000
Cob
0.1
10
1000
100110 1000
Forward Voltage (V)
Safe Operating Area
Collector Current (mA)
100
10000
PT =1ms
PT =100ms
PT =1s
1
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 4
QW-R204-008,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
