2010. 11. 10 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK596
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 5
CONDENSER MICROPHONE APPLICATION.
FEATURES
·Especially Suited for Use in Audio, Telephone.
·Capacitor Microphones.
·Excellent Voltage Characteristics.
·Excellent Transient Characteristics.
MAXIMUM RATING (Ta=25℃)
123
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. SOURCE
2. GATE
3. DRAIN
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
EE
L
N
M
C
H
0.80
O0.75
O
B
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage VGDO -20 V
Gate Current IG10 mA
Drain Current ID1mA
Drain Power Dissipation PD400 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate-Drain Breakdown Voltage V(BR)GDO IG=-100μA-20 - - V
Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=1μA- -0.6 -1.5 V
Drain Current IDSS (Note) VDS=5V, VGS=0 100 - 350 μA
Foward Transfer Admittance | yfs |V
DS=5V, VGS=0, f=1kHz 0.4 1.2 - mS
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz - 3.5 - pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz - 0.65 - pF
Note : IDSS Classification A:100~170, B(Y):150 ~ 240, C(GR):210 ~ 350
2010. 11. 10 2/3
KTK596
Revision No : 5
ELECTRICAL CHARACTERISTICS
(Ta=25℃, VCC=4.5V, RL=1kΩ, Cin=15pF, See Specified Test Circuit.)
SPECIFIED TEST CIRCUIT
·Voltage gain.
·Frequency Characteristic.
·Distortion.
·Reduced Voltage Characteristic.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Voltage Gain GVVin=10mV, f=1kHz --3.0 -dB
Reduced Voltage Characteristic ΔGVV Vin=10mV, f=1kHz VCC=4.5V→1.5V --1.2 -4.0 dB
Frequency Characteristic ΔGVF f=1kHz～110Hz - - -1.0 dB
Input Resistance Zin f=1kHz 25 - - MΩ
Output Resistance ZOf=1kHz - - 700 Ω
Total Harmonic Distortion THD Vin=30mV, f=1kHz - 1.0 %
Output Noise Voltage VNO Vin=0, A curve - - -110 dB
CC
V =4.5V
V =1.5V
CC
15pF
VTVM
OSC
For Outpu
t
1kΩ
V
THD
A
B
33uF
Impedance
1kΩ
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KTK596
Revision No : 5
