4 4AK/Diodes FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N LESEY PNP L-FBY VAYLATA-KPLT Epitaxial Planar Silicon Diode Arrays BEREAZ1 y +> 7A/Ultra-High-Speed Switching @ A%7+;k / Dimensions (Unit : mm) HE 1) SMT, UMT lelf#FA(c 3 fit 4 . aps FMN1/FMP1 UMN1N/UMP1N (AN F4A- KPA DTS, 2) ABEBRIC LH, BOTA CS oe 11284 20802 5, 0.95 0.95 0.840.) a . (to * 0.65. 0,65 3) HED Fa TS, Aehone @) ; | | 86 o~0.1 G Wa ; ty te zl: | {J - els @ Features Tha o_ = 5 ae +0. tor | 8 +0.) 1) Three or four diodes are housed in [beset Ores S {!0-2*8:05 0.150.085 {| 3 the same volume as SMT or UMT 3| SMT E RTA 2) The automatic mounting machine ROHM + FMT for can apply for mounting. EIAJ SC74A ROHM : UMS 3) Characteristics are uniform. IMN10/IMN11/IMP11 UMN11N/UMP11N 2.940.2 119-2 2.00.2 Le 0.80.1 30,1 BeREATYF-7A 0.65 0.65 ~ @ s 0~0.1 a8 aay - @ Applications a z| # PP fototiu. = oy 5 Wer 8 iah_ ; . | +001 +0.) ; ie High-speed switching. (0.373-h. G.15*8-4, ? 9. L o.ist0.05|(2. SAFE ORES 3 AMF COM 3 ROHM : IMD EIAJ : SC-74 ROHM | UM6 SMBS / Equivalent Circuits (3) (4) (5) (3) (4) (5) (4) (5) (6) (4) (5) (6) (4) (5) (6) (2) (1) (2) (1) (3) (2) (1) 3)(2)(1) (3) (2) 1) FMN1 FMP1 IMN10 IMN11 IMP11 (3) (2) (1) (3) (2) (1) (3) (2)(1) (3)(2) (1) (4) (6) (4) (6) (4) (5) (6) (4)(5)(6) UMN1IN UMP1N UMN11N UMP11N 218FMN1/FMP1/IMN10/IMN11/IMP11 444 K/Diodes UMN1N/UMP1N/UMN11N/UMP11N @ XB ATH / Absolute Maximum Ratings (Ta=25C) Sd _ sg Seg camer | mee! emer | * 9 | o 7MR) BBX | oes | era Type vam) | VA (W) | tem (may | ea (tus) | (TOTAL) | Fiecy | Tstg CC) lo (mA) Isurge (A), Pd (mW) FMN1 UMNIN 80 80 80 25 250m 80/150 150 55~150 FMP1 150 55~150 UMPIN 80 80 80 25 250m 80/150 IMNi0 80 80 300 100 4 300* 150 55~150 iMN11 150 55~150 UMNAAIN 80 80 300 100 4 300* /150 ___| IMP41 . 150 ~55~150 UNPTIN 80 80 300 100 4 300*/150 * 48, 1F4tH 200mW HBAS ES BAH Electrical Characteristice (Ta= 25C) mee vw BB Hi * THF oo me A T Cond. Cond. Cond. Gond. ype vewy [SPE | tg (yay OP" | cy (pry te (ng) a Max. | Ip(maA) | Max. | Va(v) | Max. | Va(v) | f (MHz) | Max. | Va(vyy | Ip (ma) | aie ees FMN1 0.9 5 0.41 70 3.5 6 1 4 6 5 Fig.8 UMNIN FMP1 nn ne UMPIN 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig.8 iMN10 12 100 0.1 70 3.5 6 1 4 6 5 Fig.8 IMN11 UMN1IN 12 100 0.1 70 3.5 6 1 4 6 5 Fig.8 IM P14 ; UMPIIN 1.2 100 0.1 70 35 6 1 4 6 5 Fig.8 @ BRASH hss / Electrical Characteristic Curves (Ta = 25) %) 3 8 | (mA) NG 25 7 POWER DISSIPATION : Pa/PaMax 3 1 FORWARD CURRENT Ir 0 { lL . 0. 25. 80.75. 100725150 9 02 04 AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE : Ve (V) Fig.1 BH ide Fig.2 MiBwi-IBSELSM (P TYPE) nonm 219 SOV A A NRA | | ATT SAS,FMN1/FMP1/IMN10/IMN114/iIMP11 34 4 K/Diodes UMN1N/UMP1N/UMN11N/UMP11N 1 000 t gz 100 = = 49 5 5 fs 2 ira Ww 5 c 5 5 10 5 . 2 << a = ti 5 wot WW a 0015 10 20 30 40 50 0. REVERSE VOLTAGE: V, (V) FORWARD VOLTAGE : Ve (V) : . . Fig.4 WA --WAeSEE $e (N TYPE) Fig.3 Bat WBE tt (P TYPE) 1000 5 _ 3} q ~ = 100 % Es << Zz = LE a 10 i i be x Zz 3 Wi ut 1 = yn Ld oc a w lu woo g < E Oo a 0015 10 40 a 0 2 4 6 8 10 1416 REVERSE VOLTAGE : Va (V) REVERSE VOLTAGE :V, (V) Fig.5 ata jit te (N TYPE) Fig.6 te FRAS eS tt 0.01 pF D.U.T. JL ai. tT wr | 5kQ = PULSE GENERATOR 500 | __ SAMPLING OUTPUT 500 OSCILLOSCOPE : L | 2 INPULSE > c Li > Q oO te | c I 100ns W i wn i OUTPULSE t > te i ~\ | FORWARD CURRENT : Ir (mA) Fig.7 HGRA fe] WS at tat: Fig. 8 spl iges fal (tre) Abe NES 220 ROM