GH5R41HA3C - Sharp Electronics Corp.

111

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

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Hologram Lasers GH5R41HA3CHologram Lasers

Hologram device

Cap glass

Laser chip

Reference plane

1.27

0.25

4.8

–

0.1

❇P1.1±0.15◊4=4.4±0.15

ø8.2 +

–0

0.025

ø8.2 +

–0

0.025

ø6.63±0.1

3.2±0.15

4.9±0.2

4.77±

0.12

4.6±

0.5

2.8±

0.2 2.0±0.1

1.2±

0.1

12-ø0.3±0.05

ø7.5

MAX.

0.3

MAX.

3.97±0.1

4.8+

–0

0.1

2.8±0.15

❇Dimension measured at

lead base

Tolerance ±0.2mm

Vcc

GND

E+G

Vref

D4 D1D2D5D6D7D8

F+H

Swin

!11

GH5R41HA3C

(Under development) ■Outline Dimensions

High Power Output Hologram Laser

for MAX. ✕24 Speed CD-R Drive

!2 y

!0oiu

trewq

Top View

Terminal connection Pin configuration

(Unit : mm)

■Features

(1) High power output (pulse MAX. 144mW)

(2) For MAX. ◊24 speed CD-R, ◊40 speed CD-ROM

(With built-in MIN. 45MHz OPIC❇)

(3) High coupling efficiency

The ellipticity (θ⊥/θ//) is close to 1.

(4) φ4.8mm thickness package

(5) With built-in beam splitter and diffraction grating

❇OPIC : (Optical IC) is a trademark of SHARP Corporation.

An OPIC consists of a light-detecting element

and a signal-processing circuit integrated onto a

single chip.

■Applications

(1) CD-R drives

(2) CD-RW drives

■Absolute Maximum Ratings (TC=25˚C)

Parameter Symbol Rating Unit

❇1Optical power output PHC 101 mW

❇2Optical power output (pulse) PHP 144 mW

❇3Operating temperature Topr 0 to +60 ˚C

❇3Storage temperature Tstg -40 to +85 ˚C

❇4Soldering temperature Tsold 260 ˚C

❇1Output power from hologram laser Equivalent to 120mW (CW) from cap glass

❇2Output power from hologram laser Equivalent to 160mW (pulse) from cap glass (Pulse width : 0.5µs, Duty : 50%)

❇3Case temperature ❇4At the position of 1.6mm from the lead base (Within 5s)

Laser 2

OPIC supply voltage VCC 6V

VReverse voltage VR

Hologram Lasers GH5R41HA3C

■Electro-optical Characteristics (TC=25˚C)

Parameter Symbol MAX. Unit

❇1Focal offset DEF +0.7 µm

❇6RES output amplitude VRES 0.3 V

Jitter JIT 23 ns

Conditions MIN. TYP.

Collimated lens output power

1.5mW, High gain -0.7 -

0.09 0.19

Collimated lens output power

1.5mW, High gain --

❇2Focal error symmetry BFES Collimated lens output power

1.5mW, High gain -25 - +25 %

❇3Radial error balance BRES -25 - +25 %

❇5FES output amplitude VFES 0.35 0.59 0.94 V

Collimated lens output power

1.5mW, High gain

❇4RF output amplitude VRFH Collimated lens output power

1.5mW, High gain 0.65 0.94 1.23 V

Collimated lens output power

1.5mW, High gain

Collimated lens output power

1.5mW, High gain

❇7Main spot balance MSB Collimated lens output power

1.5mW, High gain 80 (100) 120 %

❇8Sub spot balance SSB Collimated lens output power

1.5mW, High gain 80 (100) 120 %

❇9Strain of RF signal shape RFhCollimated lens output power

1.5mW, High gain - - 230 %

❇1Distance between FES=0 and jitter minimum point

❇2(a–b) / (a+b)

❇3

❇4Amplitude of VA+VB+VC+VD(focal servo ON, radial servo ON)

❇5VB–VA(Focal vibration)

❇6

Amplitude of (V

–V

)–k1(V

–V

). k1=(V

)/(V

)=1

When tracking servo is ON, (V

–V

)–k1(V

–V

)+αshould be 0.

❇7(VA+VB) / (VC+VD)

❇8VC/VD

❇9VRFtop/VRFave

a–b

2◊(a+b)

a (+amplitude of RES)

b (–amplitude of RES)

GND

a (+amplitude of FES)

b (–amplitude of FES)

VRFtop

VRFave

Vref

112

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

113

Hologram Lasers GH5R41HA3CHologram Lasers

■Electro-optical Characteristics of Laser Diode (TC=25˚C)

Parameter Symbol MAX. Unit

Threshold current Ith 41 mA

155

Half intensity angle

ø⊥+3 ˚

K-LI1 - %

Kink K-LI2 15 %

Conditions MIN. TYP.

-30

Operating current - 130 mA

-3 -

0.988 -

P1=30mW, P2=90mW, P3=150mW - -

Iop

∆ø// -1 - +1 ˚

−

Po=100mW

Parameter Symbol Unit

❇11

Segment

Offset voltage difference, Gain switching

∆Vod mV A, B

Conditions MIN. TYP.

-30 -

❇90.1µF or more capacitor should be added between OPIC power supply terminal and GND, Vref terminal and GND. (at the position of 5mm

or less from the lead base)

❇10 Applicable divisions correspond to output terminals .

A : VA, VB, VC, VD

B : VE+G, VF+H

❇11 Difference from Vref

MAX.

Supply current ICC1 High gain, Gain switching SW=H - 25 32 mA

-3035mA

Common to high/low gain +30

ICC2

Po=100mW

Operating voltage Vop Po=100mW - 2.2 2.5 V

Wavelength λpPo=100mW 773 784 797 nm

Differential efficiency ηd70mW

I(100mW)-I(30mW) 0.7 0.85 1.2 mW/mA

θ// 7.5 9 10.5 ˚

θ⊥ 14.5 17 19.5 ˚

ø// -2 - +2 ˚

Beam shift ø//(100mW)-ø//(3mW)

Po=10 to 150mW

■

Electro-optical Characteristics of OPIC for Signal Detection

❇10 (TC=25˚C, VCC=5V, Vref=2.1V)

Low gain, Gain switching SW=L

❇12 Output offset voltage Vod Common to high/low gain, No light -25 2 +25 mV A, B

Parallel

Perpendicular

Emission

characteristics Deviation

angle Parallel

Perpendicular

Stability of differential efficiency ∆ηdPo=10 to 150mW - - 40 %

■Electro-optical Characteristics of Hologram Laser (Design Standard*)❇1(TC=25˚C)

❇1

Parameter Symbol MAX. Unit

❇2Focal error signal capture range --

µm

Conditions MIN. TYP.

-14

Focal error signal sensitivity - 13 %/µm

-−

−

NA=0.50

f =3.0mm

NA=0.186

f =10.74mm

Disc

(SONY : YEDS-18)

Actuator

Collimated lens

Hologram laser

Laser driver

(APC)

Measuring System of Hologram Laser

❇2

* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

Hologram Lasers GH5R41HA3CHologram Lasers

Parameter Symbol MAX. UnitConditions MIN. TYP.

■Optical Characteristics of Hologram Device (Design Standard*) (TC=25˚C)

Parameter Symbol MAX. Unit

--˚

12.4

Conditions MIN. TYP.

- 26.4

Grating diffraction efficiency 6.7 9 --0:1

Grating diffraction angle - λ=780nm -2.8- ˚

Hologram diffraction

efficiency -λ=780nm 77 82 - %

- 679%

Hologram diffraction

angle -λ=780nm - 21.1 - ˚

0 th

D1, D2

±1st

Except D1, D2

■Electro-optical Characteristics of Laser Diode (Design Standard*) (TC=25˚C)

Misalignment position ∆x−-80 - +80 µm

∆y-80 - +80 µm

∆z-80 - +80 µm

❇3Reflectivity of LD rear facet Rr−85 - - %

114

■

Electro-optical Characteristics of OPIC for Signal Detection (Design Standard*)

(TC=25˚C, VCC=5V, Vref=2.1V)

❇3Sampling rate is 1pc./reflection membrane formation process lot

❇4Appricable divisions correspond to output terminals.

A : VA, VB, VC, VD

B : VE+G, VF+H

❇5Difference from Vref

❇6Light source is a laser diode of λ=780nm.

❇7-3dB level (0dB level is taken for output level when f=0.1MHz)

❇810µW of DC light is applied to the center of each photodiode, and 4µW

of AC light is irradiated. BW=10kHz

❇95kΩof resistor and 10pF of capacitor should be connected in parallel

between output terminal and Vref terminal.

Parameter Symbol Unit

❇4

Segment

Conditions MIN. TYP. MAX.

Supply voltage VCC −4.75 5 5.25 V

Reference voltage Vref −2.00 2.1 2.21 V

Reference voltage terminal current

Iref Common to high/low gain, No light -0.5 1 2 mA

❇6,7,8,9

Response frequency fcm

Main amp, Common to high/low gain, -3dB

45 60 - MHz A

fcs

Sub amp, Common to high/low gain, -3dB

1 2 - MHz B

❇5,6,8,9

Peaking level Vpk2Common to high/low gain

f=0.1 to 50MHz --3dBA

❇9Noise level fnm Hign gain, 50 Ωend

BW=30kHz, f=36MHz - -74 -68 dBm A

Sensitivity 1 Rm1 Main amp, Hign gain 18 24 30 mV/µWA

Sensitivity 2 Rm2 Main amp, Low gain 0.72 0.96 1.2 mV/µWA

Sensitivity 3 Rm3Sub amp, Hign gain 72 96 120 mV/µWB

Sensitivity 4 Rm4Sub amp, Low gain 2.88 3.84 4.8 mV/µWB

Thermal drift of sensitivity Rsm/T Common to high/low gain - 4 200 - ppm/˚CA, B

Thermal drift of offset voltage

Vod/T Common to high/low gain, No light - 300 - µV/˚CA, B

Thermal drift of offset voltage 1

Vos1/T Main amp, Hign gain, No light - 30 - µV/˚CA

Thermal drift of offset voltage 2

Vos2/T Main amp, Low gain, No light - 15 - µV/˚CA

Thermal drift of offset voltage 3

Vos3/T Sub amp, Hign gain, No light - 30 - µV/˚CB

Thermal drift of offset voltage 4

Vos4/T Sub amp, Low gain, No light - 15 - µV/˚CB

Thermal drift of offset voltage 5

Vos5/T

Between main-sub amp, Hign gain, No light

- 100 - µV/˚CA-B

Thermal drift of offset voltage 6

Vos6/T

Between main-sub amp, Low gain, No light

-45-

µV/˚CA-B

Over/undershoot at gain

switching tstr1

Common to high/low gain, Integral value of the first

overshoot/undershoot peak value and overshoot/undershoot time

- 200 - µs✕mV A, B

Stabilization time at gain switching

tstr2

Common to high/low gain, time for ±3mV

--25

µsA, B

Settling time test

Output voltage 500mV →5mV

Low gain, fall time -30-nsA

Maximum output voltage Vomax

Common to high/low gain, V

ref

reference

1--VA, B

Output terminal current Io Common to high/low gain -0.03 0.01 0.3 mA A, B

f=6.9MHz

* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.

• Please refer to the chapter "Handling Precautions"

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

115

Application Circuits

NOTICE

●The circuit application examples in this publication are provided to explain representative applications

of SHARP devices and are not intended to guarantee any circuit design or license any intellectual

property rights. SHARP takes no responsibility for any problems related to any intellectual property

right of a third party resulting from the use of SHARP's devices.

●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

SHARP reserves the right to make changes in the specifications, characteristics, data, materials,

structure, and other contents described herein at any time without notice in order to improve design or

reliability. Manufacturing locations are also subject to change without notice.

●Observe the following points when using any devices in this publication. SHARP takes no responsibility

for damage caused by improper use of the devices which does not meet the conditions and absolute

maximum ratings to be used specified in the relevant specification sheet nor meet the following

conditions:

(i) The devices in this publication are designed for use in general electronic equipment designs such as:

--- Personal computers

--- Office automation equipment

--- Telecommunication equipment [terminal]

--- Test and measurement equipment

--- Industrial control

--- Audio visual equipment

--- Consumer electronics

(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and

safety when SHARP devices are used for or in connection with equipment that requires higher

reliability such as:

--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)

--- Traffic signals

--- Gas leakage sensor breakers

--- Alarm equipment

--- Various safety devices, etc.

(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely

high level of reliability and safety such as:

--- Space applications

--- Telecommunication equipment [trunk lines]

--- Nuclear power control equipment

--- Medical and other life support equipment (e.g., scuba).

●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific"

applications other than those recommended by SHARP or when it is unclear which category mentioned

above controls the intended use.

●If the SHARP devices listed in this publication fall within the scope of strategic products described in

the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to

export such SHARP devices.

the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any

means, electronic or mechanical, for any purpose, in whole or in part, without the express written

permission of SHARP. Express written permission is also required before any use of this publication

may be made by a third party.

●Contact and consult with a SHARP representative if there are any questions about the contents of this

publication.