MJ105 (SILICON) BU105 HORIZONTAL DEFLECTION SILICON TRANSISTORS . .. designed for use in line operated black and white (19 and 20 inch 110 deflection circuits) or color (11 and 14 inch 90 deflection circuits) television receivers. @ High Collector-Emitter Voltage VCER (Peak) = 1400 Vde MJ105 = 1500 Vde BU105 Collector-Emitter Saturation Voltage VCE(sat) # 5.0 Vide (Max) @ Ic = 2.5 Ade @ Fall Time @ Ic = 2.0 Ade t= 0.5 us (Typ) = 1.0 us (Max) 2.5 AMPERE POWER TRANSISTORS NPN SILICON 1400, 1500 VOLTS 10 WATTS MAXIMUM RATINGS Rating Symbol | Ms105 [| BU105 Unit Coliectar-Emitter Voltage Yoeo 750 Vide Collector-Emitter Voltage - Continuous VceR 750 750 v (Rge = 100.9) Peak 1400 1500 Collector-Base Voltage Continuous VcB 750 750 v Peak 1400 1500 Ernitter-Base Valtage Vea 59 Vie Collector Current Continuous le 2.5 Adc Base Current Positive ig 25 Adc Negative 1.5 Total Device Dissipation @ Tc = 90C Pp 10 Watts Derate above 90C 0.4 wilt Operating and Storage Junction Temperature: Ty.T stg -65 to +115 C Range THERMAL CHARACTERISTICS Characteristic [___Symtbot | Max Unit } [ Taermal Resistance, Junction to Case | Asc { 25 | Sciw | ELECTRICAL CHARACTERISTICS (T = 25C unless atherwise noted) {| Characteristic [ Symbol | Min [ Tye | max | unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) BV cEOtsus) 750 - - Vde (Ug = 100 mAdc, Ig = 0) Collector Cutoff Current Ices mAdc (Vice = 1400 Vdc, Veg = 0) M105 ~ - 19 (VoE = 1500 Vdc, Vag = 0} BUI0S - - 1.0 Emitter-Base Voltage 8VeEBO 5.0 ~ ~ Vde (lg = 100 mAde, I = 0) ON CHARACTERISTICS Coltector-Emitter Saturation Voltage Vcetsat) - - 5.0 Vide {Ic = 2.8 Adc, ig = 1.5 Adc) Base-Emitter Saturation Voltage (te = 2.5 Ade, Ig = 1.5 Ade) OYNAMIC CHARACTERISTICS Current-GainBaridwidth Product (2) ft - 78 - MHz (ig = 0.1 Ade, Veg = 5.0 Ve, free = 1.0 MH2) Output Capacitance (Veg = 10 Vdc, Ie = 0, f = 0.1 MHz) VBE (sat) - _ 18 Vde Cob - 68 ~ oF SWITCHING CHARACTERISTICS (F igure 1 and text) Fall Time tf = Os 10 us (tc = 2.0 Adc, gt = 1.5 Adc, Lg =12 4H, Rg = 2.5, Non-optimum values to comply with BU105 specification} VY) Pulse Test: Pulse Width 300us, Duty Cycle 2.0%. (2) ty = [Pte] frost 364 Lesh /A_ SEATING _ PLANE STYLE 1: E PIN 1. BASE 2, EMITTER J*] CASE: COLLECTOR 1 NOTE: 1. DIM Q" IS DIA. CASE 11MJ105, BU 105 (continued) CIRCUIT OPTIMIZATION Test/application circuit and operating waveforms for BU105/ MJ105 are shown in Figure 1. It may be used to evaluate devices in the conventional manner, i.e., to measure fall time, storage time, and saturation voltage. However, the circuit was designed with oper- ating efficiency in mind, so that it could be used to evaluate devices by one simple criterion, supply power input. Excessive power input can be caused by a variety of problems, but it is the dissipation itself that is of fundamental importance. Once the transistor operating point has been established, fixed circuit values may be selected for the test fixture. Factory testing may then be made with one meter reading, without adjustment of the test apparatus. FIGURE 1 TEST CIRCUIT AND WAVEFORMS HP214A 0.005 uF (See Waveform) BASE CIRCUIT VALUES + 50 Vie UF SYYY a) AR 0.0063 uF sly + 15 kV a 0 An2208 ts uF 1O pe 200 ay vde BU105 600 Vdc M108 T . = PIN vt 120 Vde GEE Wattmeter = Re lg Switching Test 25 12.0 Optimum 7.0 15.0 ORIVER INPUT SIGNAL 5 9V VCE _ Vee i. FUNDAMENTAL WAVEFORMS OF A SIMPLIFIED HORIZONTAL DEFLECTION CIRCUIT 365 DESCRIPTION OF SPECIAL COMPONENTS DUMMY YOKE INDUCTOR (Ly} 2.0 mH, 52.5 turns, #16 AWG enamel wire 15 turns per layer, 3.5 layers on 1.375 inch diameter bobbin, enclosed in a Ferroxcube, cup core K535221-B2A, with a 0.687 inch diameter core, with 0.003 inch core gap. Use a nylon bolt and nut to hold cup halves together. DUMMY HIGH VOLTAGE AND HORIZONTAL SCAN TRANSFORMER (Le) 5.5 mH, 121 turns, #20 AWG enamel wire 33 turns per layer, 3.6 layers 1 mil mylar insulation between layers wound on 1 leg of Allen Bradley 0.5 inch square Ferrite U core {2} WO3 material with 0.007 inch gap in each leg. Core halves held together with plastic. DRIVER TRANSFORMER (T1) Motorola part number 25D68782A05-1/4"' laminate E iron core. Primary inductance - 39 mH, Secondary Inductance - 0.22 mH, Leakage inductance with primary shorted - 2.0 uH. Pri- mary 260 turns, #28 AWG enamel wire, Secondary 17 turns, #22 AWG enamel wire. BASIC CONSIDE RATIONS The primary consideration when choosing a deflection transistor for a conventional (parallel connected) circuit, as shown in Figure 1, is one of voltage capability. The flyback voltage to which the device will be subjected is a relatively predictable value with respect to the main power supply voltage. This voltage pulse, shown in Figure 1, will usually be about 8 times the value of vt, but may be varied somewhat by adjusting retrace time and flyback tuning. For this reason these high voltage devices are particularly useful in cost conscious solid state receivers, as they permit the use of an off-the-line half wave power supply.MJ105/BU 105 (continued) COLLECTOR CIRCUIT VALUES The power supply used in the circuit of Figure 1, was chosen to produce a 1000 volt collector pulse on the transistor, a conserva- tive value, recommended for unregulated applications. The values of yoke (Ly), flyback primary (Le), retrace capacitor (CR), and $" shaping capacitor (Cg) shown, will result in a peak collector current of about 2.0 A. This is sufficierit to deflect (and provide high voltage for) large screen 110 black and white or small 90 color receivers. Peak collector currents to 2.5 A may be handled by the BU105/MJ105. Holding the supply constant for most effi- cient application, adjustment of amount of defiection may be made by raising or lowering Ly and L-. Remember that Ly ly isconstant for the fixed voltage situation, and actual deflection is proportional toly Ly. Values of Cg and CR must be varied inversely with Ly to maintain retrace and S shaping periods. FIGURE 2 RELATIONSHIP OF POWER DISSIPATION TO Lg, WITH CHANGING tg1. tc = 2.0 A PEAK Lp ul Pin, INPUT POWER (WATTS) 06 08 10 12 1601 Ipt, BASE-CURRENT (AMP) 02 O4 14 BASE CIRCUIT VALUES The driver power supply and driver transistor type can be selected according to convenience. A TO-5 or Uniwatt type will generatly be needed. Once this is done, the turns ratio of the driver transformer can be picked to produce about 4 to volts peak to peak at the base of the output device. Tight coupling be- tween windings is recommended on early designs to allow optimizing leakage inductance by adding inductance externally. Later, the leak- age can be designed in to the transformer. The Rg and its bypass electrolytic, often calied the speed up circuit, allows adjustment of ig1 (or ig end of scan or Ig end) while still providing a low ac impedance for good turn-off of the output device. In Figure 2, the effects of varying Lg and 1g4 on the total power input to the deflection circuit are shown. Note that an optimum tg can be found which will produce low dissipation over a wide range of Ig 4. This is desirable in order to produce efficient operation over a wide range of circuit component tolerances. Likewise, best Lg also gives the least sensitivity to output transistor hee. The best value of Lg found in Figure 2 is 15 wH. Remember that this is the sum of the actual leakage inductance of the trans- former (secondary inductance with primary shorted) and an ex- ternal L, if necessary. The best value of gq is 0.8 A achieved in the typical device by using Rg = 7 2, derived experimentaity. These are the choices recommended for the test fixture, when the transistor is used at Icqy = 2.0 A. For other values of Icy the drive circuit components must be changed. Figure 3 shows the values of Lg and Igy which should be used. The value of Rg which will be required to produce the Igq is also given, but of course, it is not an independent variable. PERFORMANCE Shown in Figures 4 and are the results which will be typically obtained with the test circuit at various operating conditions. fig, RESISTANCE (OHMS) Lg, BASE INDUCTANCE (ull) 366 8 & 1, TIME(s) Pin, INPUT POWER (WATTS) FIGURE 3 INTERRELATION OF Rg, Lg, AND Igy 25 29 (pt, BASE CURRENT (AMP) 20 tem, COLLECTOR CURRENT (AMP) 05 10 18 25 FIGURE 4 INTERRELATION OF tz, FALL TIME AND t,, STORAGE TIME 5.0 40 Se o x o 15 20 25 3.0 Icom, COLLECTOR CURRENT (AMP) 10 FIGURE 5 Pi, POWER DISSIPATION, WITH DEVIATIONS OF Vcem AND Icy 1400 3.0 25 15 20 tow, COLLECTOR CURRENT (AMP) 0.5 1.0MJ105, BU 105 (continued) TYPICAL TRANSISTOR CHARACTERISTICS FIGURE 1 ~ DC CURRENT GAIN hee, OC CURRENT GAIN 0.03 0.05 01 02 03 O05 10 Ic, COLLECTOR CURRENT (AMP) FIGURE 3 SAFE OPERATING AREA 10 Te = 90C {Pulse} t<20 gs, d =0.25=t/T. Region 1 ~ (de) Transistor may be operated under all base emitter condi- tions provided no limiting values are exceeded. 0.01 0.005 MJ105 extends to 1400 valts. 8U105 extends to 1500 volts. Ic, COLLECTOR CURRENT (AMP) 0.001 2.0 200 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 0 20 50-100 20 36 Transistor may be operated under pulse conditions provided RaEe< 100 ohms, 1000 2000 367 V, VOLTAGE (VOLTS) fog, COLLECTOR CUTOFF CURRENT (uA) 0.03 FIGURE 2 ON VOLTAGES I* ' 25C @ iclp=2.0 0.1 02 03 08 Ic, COLLECTOR CURRENT (AMP) 10 FIGURE 4 COLLECTOR CUTOFF CURRENT BUI05 Vcg = 1500 VOLTS MJ105 Vog = 1400 VOLTS 20 40 60 20 Ty, TEMPERATURE (C) 20 3.0 100