VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CHARACTERISTIC Short Circuit Current VTB4051H TEST CONDITIONS H = 100 fc, 2850 K Min. Typ. 100 200 ISC Temperature Coefficient 2850 K .12 Open Circuit Voltage H = 100 fc, 2850 K 490 VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 2.0 V UNITS Max. A .23 %/C mV mV/C 250 pA Shunt Resistance H = 0, V = 10 mV .56 G RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/C CJ Junction Capacitance H = 0, V = 0 3.0 nF SR Sensitivity 365 nm .10 A/W range Spectral Application Range p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. NEP D* 320 1100 920 2 nm nm 40 V 60 Degrees Noise Equivalent Power 2.1 x 10-14 (Typ.) Specific Detectivity 1.8 x 10 13 (Typ.) W Hz cm Hz W PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 28 www.perkinelmer.com/opto