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VTB Proc ess Photodiodes VTB4051H
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a layer
of clear epoxy. These diodes have very high
sh unt resist ance an d hav e good blue re spons e.
PACKAGE DI MENSIONS inch (mm)
CASE 13 CERAMIC
CHIP ACTIVE AREA: .023 in
2
(14.8 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Ope rati ng Temp eratur e: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB4051H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 100 200 µA
TC ISC ISC Temperature Coefficient 2850 K .12 .23 %/°C
VOC Open Circuit Voltage H = 100 2850 K 490 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 250 pA
RSH Shunt Resistance H = 0, V = 10 mV .56 GΩ
TC RSH RSH Temperature Coeff ic ient H = 0, V = 10 mV -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 3.0 nF
SRSensitivity 365 nm .10 A/W
λrange Spectral Applica tion Range 320 1100 nm
λpSpectral Response - Pea k 920 nm
VBR Breakdown Voltage 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±60 Degrees
NEP Noise Equivalent Power 2.1 x 10-14 (Typ.)
D* Specific Detectivity 1.8 x 10 13 (Ty p.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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