Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
RoHS COMPLIANT
RD30HVF1-101is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 75 W
Pin Input power Zg=Zl=50Ω 2.5
W
ID Drain current - 7 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 2.0 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 130 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
Pout Output power f=175MHz ,VDD=12.5V 30 35 - W
ηD Drain efficiency Pin=1.0W, Idq=0.5A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=30W(PinControl)
f=175MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
14.0+/-0.4
3.0+/-0.4
5.1+/-0.5
R1.6
2.3+/-0.3
4-C1
2
6.6+/-0.3
0.10
2.8+/-0.3
3
18.0+/-0.3
22.0+/-0.3
7.6+/-0.3
1
7.2+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:m
m
Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPE RATURE
0
20
40
60
80
100
0 40 80 120 160 200
A MBIENT TEMPERA TURE Ta ( ° C)
CHANNEL DISSIPATION Pch(W
)
...
Vds VS. Crss CHARACTERISTICS
0
4
8
12
16
20
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
120
140
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
2
4
6
8
10
0246810
Vds(V)
Ids(A)
Ta=+25°C
Vgs=5V
Vg s= 4.5V
Vgs=4V
Vg s= 3.5V
Vgs=3V
Vg s= 5.5V
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
012345
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
3/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Vdd-Po CHARACTERISTICS
0
20
40
60
80
468101214
Vdd(V)
Po( W)
0
2
4
6
8
10
12
14
16
Idd(A)
Po
Idd
Ta=25°C
f= 175MHz
Pin= 1.0W
Idq= 0.5A
Zg=ZI= 50 ohm
Vgs-Ids CHARACTERISTICS 2
0
2
4
6
8
2345
Vgs(V)
Ids ( A )
Vds=10V
Tc=-25~+75°C -25°C
+75°C
+25°C
Pin-Po CHARACTERISTICS
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5
Pin( W)
Pout(W) , Idd(A)
0
20
40
60
80
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f= 175MHz
Vdd=12.5V
Idq= 0.5A
P i n-Po CHARACTERISTICS
0
10
20
30
40
50
0102030
Pin(dBm)
Po(dBm) , Gp(dB) , Idd(A)
0
20
40
60
80
100
ηd(%)
Ta=+25°C
f= 175MHz
Vdd=12.5V
Idq= 0.5A
Po
ηｄ
Ｉｄｄ
Gp
Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
4/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=175MHz)
RD30HVF1
175MHz
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2
C3:2200pF,330uF in parallel
C3
C2:2200pF*2 in parallel
L1
9.1kOHM
100
34
10
56pF
100pF 8pF
10pF
Dimensions:mm
56pF
RF-in
Vdd
Vgg
100OHM
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
C1
RF-OUT
C2
C1:2200pF 10uF in parallel Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
90
100
12
27
32
L1
8.2kOHM
8
4.8
10.8
43pF 5pF 50pF
54
44
32
51
90
100pF33pF
100pF
Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
5/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
135 0.71-j7.67 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W
146 0.94-j6.46 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W
175 0.53-j5.34 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W
f=146MHz Zout
f=175MHz Zin f=135MHz Zin
f=135MHz Zout
f=175MHz Zout
f=146MHz Zin
Zo=10Ω
Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
6/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.867 -172.4 8.747 72.7 0.015 -11.6 0.687 -166.3
150 0.879 -176.3 5.523 61.2 0.014 -18.8 0.723 -168.8
175 0.885 -177.5 4.571 56.4 0.013 -22.2 0.740 -169.6
200 0.888 -179.1 3.852 52.4 0.012 -24.2 0.760 -170.5
250 0.905 178.5 2.877 44.1 0.010 -26.2 0.806 -172.5
300 0.915 176.2 2.202 37.1 0.009 -27.0 0.825 -174.8
350 0.926 174.1 1.754 31.4 0.007 -24.4 0.853 -177.1
400 0.933 171.8 1.422 25.8 0.006 -18.5 0.879 -179.4
450 0.936 169.5 1.167 20.9 0.005 -8.2 0.887 178.4
500 0.945 167.6 0.985 17.2 0.004 8.0 0.902 176.1
550 0.950 165.6 0.842 13.3 0.005 21.6 0.914 174.1
600 0.951 163.6 0.725 9.8 0.005 35.6 0.918 172.2
650 0.954 161.7 0.635 7.2 0.005 45.7 0.928 170.2
700 0.957 159.9 0.559 3.7 0.007 53.5 0.933 168.4
750 0.962 158.2 0.495 1.3 0.007 58.4 0.936 166.6
800 0.963 156.5 0.449 -0.5 0.008 61.6 0.943 164.8
850 0.963 154.8 0.407 -3.8 0.009 60.7 0.947 163.3
900 0.963 153.2 0.366 -5.2 0.011 61.5 0.947 161.7
950 0.962 151.6 0.337 -6.6 0.011 63.1 0.953 159.9
1000 0.964 150.1 0.315 -9.9 0.013 65.6 0.955 158.7
1100 0.966 146.9 0.275 -12.1 0.015 62.3 0.958 155.5
S11 S21 S12 S22
Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
7/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice tha
t
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to aris
e
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notic
e
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products ar
e
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters fo
r
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact t
o
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefor
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case o
f
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to th
e
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the las
t
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 17 Aug 2010
8/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Keep safety first in your circuit designs !
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