CMT04N40 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220 D SOU RCE DRAIN G ATE Top View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation Symbol Value Unit ID 4.0 A IDM 14 VGS 20 V VGSM 40 V PD Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 74 W 0.59 W/ TJ, TSTG -55 to 150 EAS 200 mJ JC 1.7 /W JA 62.5 TL 260 (VDD = 100V, VGS = 10V, IL = 20A, L = 10mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds 2001/11/07 Draft Champion Microelectronic Corporation Page 1 CMT04N40 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package CMT04N40N220 TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT04N40 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Symbol Min V(BR)DSS 400 Typ Max Units V mA Drain-Source Leakage Current (VDS = 400 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 A) VGS(th) 3.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * RDS(on) 1.3 1.8 Drain-Source On-Voltage (VGS = 10 V) (ID = 4.0 A) VDS(on) 8.6 V 0.01 0.1 Forward Transconductance (VDS = 15 V, ID = 2.0A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (VDD = 200 V, ID = 4.0 A, VGS = 10 V, RG = 9.1) * gFS 2.0 1.8 2.5 mhos Ciss 440 616 Coss 72 100 pF pF Crss 14 19.6 pF td(on) 9.0 20 tr 11 30 ns ns td(off) 18 30 ns tf 14 30 ns Qg 13 2 Qgs 2.5 nC nC Qgd 6.0 nC Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) LS 7.5 nH VSD 0.9 ton ** ns trr 200 ns Gate-Source Charge Gate-Drain Charge (VDS = 320 V, ID = 4.0 A, VGS = 10 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 4.0 A, VGS = 0 V, dIS/dt = 100A/s) 1.6 V * Pulse Test: Pulse Width 300s, Duty Cycle 2% ** Negligible, Dominated by circuit inductance 2001/11/07 Draft Champion Microelectronic Corporation Page 2 CMT04N40 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2001/11/07 Draft Champion Microelectronic Corporation Page 3 CMT04N40 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 C B S F A U T Q PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE A B 1 2 3 C D F Z G H H J K L N Q R S T U R G L D V Z J V N 2001/11/07 Draft Champion Microelectronic Corporation Page 4 CMT04N40 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2001/11/07 Draft T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 5