CMT04N40N220 - Champion Microelectronic Corp.

CMT04N40

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GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

! Robust High Voltage Termination

! Avalanche Energy Specified

! Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

! Diode is Characterized for Use in Bridge Circuits

! IDSS and VDS(on) Specified at Elevated Temperature

PIN CONFIG UR ATION

SYMBOL

TO-220

Top View

123

GATE

DRAIN

SOURCE

D

S

G

N-Channel MOSFET

A BSOLUTE MAXIMUM RA TINGS

Rating Symbol Value Unit

Drain to Current － Continuous

－ Pulsed

ID

IDM

4.0

14

A

Gate-to-Source Voltage － Continue

－ Non-repetitive

VGS

VGSM

±20

±40

V

Total Power Dissipation

Derate above 25℃

PD 74

0.59

W

W/℃

Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃

Single Pulse Drain-to-Source Avalanche Energy － T

J = 25℃

(VDD = 100V, VGS = 10V, IL = 20A, L = 10mH, RG = 25Ω)

EAS

200

mJ

Thermal Resistance － Junction to Case

－ Junction to Ambient

θJC

θJA

1.7

62.5

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 ℃

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ORDERING INFORMATION

Part Number Package

CMT04N40N220 TO-220

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃.

CMT04N40

Characteristic Symbol Min Typ Max Units

Drain-Source Breakdown Voltage

(V

GS = 0 V, ID = 250 μA)

V(BR)DSS 400 V

Drain-Source Leakage Current

(VDS = 400 V, VGS = 0 V)

(VDS = 400 V, VGS = 0 V, TJ = 125℃)

IDSS

0.01

0.1

mA

Gate-Source Leakage Current-Forward

(V

gsf = 20 V, VDS = 0 V)

IGSSF 100 nA

Gate-Source Leakage Current-Reverse

(V

gsr = 20 V, VDS = 0 V)

IGSSR 100 nA

Gate Threshold Voltage

(V

DS = VGS, ID = 250 μA)

VGS(th) 2.0 3.0 4.0 V

Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * RDS(on) 1.3 1.8 Ω

Drain-Source On-Voltage (VGS = 10 V)

(I

D = 4.0 A)

VDS(on) 8.6 V

Forward Transconductance (VDS = 15 V, ID = 2.0A) * gFS 1.8 2.5 mhos

Input Capacitance Ciss 440 616 pF

Output Capacitance Coss 72 100

pF

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0 V,

f = 1.0 MHz) Crss 14 19.6

pF

Turn-On Delay Time td(on) 9.0 20 ns

Rise Time tr 11 30

ns

Turn-Off Delay Time td(off) 18 30

ns

Fall Time

(VDD = 200 V, ID = 4.0 A,

VGS = 10 V,

RG = 9.1Ω) * tf 14 30

ns

Total Gate Charge Qg 13 2 nC

Gate-Source Charge Qgs 2.5

nC

Gate-Drain Charge

(VDS = 320 V, ID = 4.0 A,

VGS = 10 V)* Qgd 6.0

nC

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

LD 4.5 nH

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

LS 7.5 nH

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1) VSD 0.9 1.6 V

Forward Turn-On Time ton ** ns

Reverse Recovery Time

(IS = 4.0 A, VGS = 0 V,

dIS/dt = 100A/µs) trr 200 ns

* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%

** Negligible, Dominated by circuit inductance

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TYPICAL ELECTRICAL CHARACTERISTICS

CMT04N40

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PACKAGE DIMENSIO N TO-220

L

N

H

J

K

A

C

B

D

F

G

123

T

V

U

Z

S

R

Q

PIN 1: GATE

PIN 2: DRAIN

PIN 3: SOURCE

S

C

T

U

J

R

B

Q

Z

H

A

F

L

V

G

D

N

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IMPORTANT NOTICE

Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any

integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information

to verify, before placing orders, that the information being relied on is current.

A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or

environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for

use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is

understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the

customer should provide adequate design and operating safeguards.

HsinChu Headquarter

Sales & Marketing

5F, No. 11, Park Avenue II,

Science-Based Industrial Park,

HsinChu City, Taiwan

11F, No. 306-3, SEC. 1, Ta Tung Road,

Hsichih, Taipei Hsien 221, Taiwan

T E L : +886-3-567 9979 T E L : +886-2-8692 1591

FA X : +886-3-567 9909 FA X : +886-2-8692 1596